IRF5NJZ34 [INFINEON]
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5); HEXFET功率MOSFET表面贴装（ SMD- 0.5 ）
| 型号： | IRF5NJZ34 |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| 文件： | 总7页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94600
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJZ34
55V, N-CHANNEL
Product Summary
Part Number
BV
DSS
RDS(on)
ID
IRF5NJZ34
55V
0.04Ω
22A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
22*
16
D
GS
C
A
I
D
= 10V, T = 100°C Continuous Drain Current
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
88
DM
@ T = 25°C
P
D
40
W
W/°C
V
C
Linear Derating Factor
0.32
±20
43
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
22
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
4.0
mJ
V/ns
AR
dv/dt
1.8
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
1.0
* Current is limited by package
For footnotes refer to the last page
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1
02/07/03
IRF5NJZ34
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
55
—
—
—
—
V
V
= 0V, I = 250µA
D
DSS
GS
V/°C Reference to 25°C, I = 250 A
µ
∆BV
/∆T Temperature Coefficient of Breakdown
0.054
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.04
Ω
V
= 10V, I = 16A
DS(on)
GS D
➀
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
8.0
—
—
—
—
—
4.0
—
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
= 10V, I
= 16A ➀
DS
V
DS
I
25
= 55V ,V =0V
DS GS
DSS
µA
—
250
V
= 44V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
34
V
V
= 20V
GSS
GS
nA
nC
= -20V
GSS
GS
Q
Q
Q
V
=10V, I = 22A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
7.0
14
12
V
= 44V
DS
t
t
t
t
V
= 28V, I = 22A,
DD
GS
D
28
V
=10V, R = 13Ω
G
ns
Turn-Off Delay Time
FallTime
30
d(off)
f
30
L
+ L
Total Inductance
—
S
D
Measured from the center of
nH
drain pad to center of source pad
C
Input Capacitance
—
—
—
695
252
100
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
C
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
22*
88
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.6
86
V
T = 25°C, I = 22A, V
= 0V ➀
j
SD
S
GS
nS
nC
T = 25°C, I = 22A, di/dt ≤ 100A/µs
j
rr
F
Q
200
V
DD
≤ 25V ➀
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
3.13
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5NJZ34
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20 s PULSE WIDTH
µ
20 s PULSE WIDTH
µ
Tj = 25°C
Tj = 150°C
1
1
0.1
1
10
100
0.1
1
10
100.0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
22A
=
I
D
T
= 25°C
J
T
= 150°C
J
10
V
= 25V
DS
20 s PULSE WIDTH
µ
V
= 10V
GS
1.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4
5
6
7
8
9
10 11 12
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF5NJZ34
1200
1000
800
12
8
V
= 0V, f = 1 MHZ
GS
I = 22A
D
V
V
= 44V
= 27V
C
= C + C , C SHORTED
DS
iss
gs
gd ds
C
= C
rss
gd
DS
C
= C + C
VDS= 11V
oss
Ciss
ds gd
600
Coss
Crss
400
4
200
0
1
0
10
, Drain-to-Source Voltage (V)
100
0
4
8
12
16
20
24
V
DS
Q
Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
T
= 150°C
J
T
= 25°C
J
10
100µs
1ms
1
1
0ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF5NJZ34
30
25
20
15
10
5
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
P
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
DM
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5NJZ34
80
60
40
20
0
I
D
TOP
10A
14A
22A
BOTTOM
1 5V
DRIVER
L
V
G
DS
.
D.U.T
AS
R
+
V
D
-
I
V
2
GS
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF5NJZ34
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ 22A, di/dt ≤ 270 A/µs,
SD
maximum junction temperature.
V
≤ 55V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= 25 V, Starting T = 25°C, L=0.19mH
J
DD
Peak I
= 22A,
R = 25Ω
AS
G
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/03
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7
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