IRF5NJZ48 [INFINEON]
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*); 功率MOSFET N沟道（ VDSS = 55V ， RDS（ON） = 0.016ohm ，ID = 22A * ）
| 型号： | IRF5NJZ48 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*) |
| 文件： | 总7页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94034
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJZ48
55V, N-CHANNEL
Product Summary
Part Number
BV
DSS
RDS(on)
ID
IRF5NJZ48
55V
0.016Ω
22A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
22*
22*
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
88
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.60
±20
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
160
mJ
A
AS
I
22
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
3.6
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
1.0
* Current is limited by package
For footnotes refer to the last page
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1
11/10/00
IRF5NJZ48
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
55
—
—
—
—
V
V
= 0V, I = 250µA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.056
V/°C
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.016
Ω
V
= 10V, I = 22A
DS(on)
GS D
➀
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
22
—
—
—
—
—
4.0
—
25
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
= 25V, I
= 22A ➀
DS
V
DS
I
= 55V ,V =0V
DS GS
DSS
µA
—
250
V
= 44V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
101
19
V
V
= 20V
GSS
GSS
GS
nA
nC
= -20V
GS
Q
Q
Q
V
=10V, I = 22A
D
g
gs
gd
d(on)
r
GS
V
= 44V
DS
41
t
t
t
t
23
141
60
V
= 28V, I = 22A,
DD
D
R
= 5.1Ω
G
ns
Turn-Off Delay Time
FallTime
Total Inductance
d(off)
98
—
f
L
+ L
S
D
Measured from the center of
nH
drain pad to center of source pad
C
Input Capacitance
Output Capacitance
—
—
—
1900
620
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
C
C
pF
oss
rss
Reverse Transfer Capacitance
270
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
22*
88
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Q
Diode Forward Voltage
—
—
—
—
—
—
1.3
104
210
V
T = 25°C, I = 22A, V
= 0V ➀
j
SD
S
GS
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
T = 25°C, I = 22A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 30V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
thJC
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRF5NJZ48
100
10
1
100
10
1
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 25 C
20µs PULSE WIDTH
T = 150 C
J
°
°
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
22A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
= 25V
V
DS
V
= 10V
GS
20µs PULSE WIDTH
10
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
5.0
6.0
7.0 8.0
°
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF5NJZ48
3500
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 22A
GS
C
= C + C
V
V
V
= 44V
= 27V
= 11V
iss
gs
gd ,
DS
DS
DS
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100
10
1
°
T = 25 C
J
1
ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0 V
GS
0.1
0.2
0.6
1.0
1.4
1.8
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF5NJZ48
RD
60
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5NJZ48
300
250
200
150
100
50
I
D
TOP
10A
14A
15V
BOTTOM 22A
DRIVER
L
V
D S
D.U .T
.
R
G
+
V
D D
-
I
A
AS
10V
2
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF5NJZ48
Footnotes:
Repetitive Rating; Pulse width limited by
I
SD
≤ 22A, di/dt ≤ 220 A/µs,
≤ 55V, T ≤ 150°C
maximum junction temperature.
V
DD
J
V
= 25 V, Starting T = 25°C, L=0.66mH
J
DD
Peak I
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
= 22A,
R = 25Ω
G
AS
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 11/00
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7
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