IRF5Y3205CM [INFINEON]
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.022ohm, Id=18A*); 功率MOSFET N沟道（ VDSS = 55V ， RDS（ON） = 0.022ohm ，ID = 18A * ）
| 型号： | IRF5Y3205CM |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.022ohm, Id=18A*) |
| 文件： | 总7页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94179A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y3205CM
55V, N-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF5Y3205CM
55V
0.022Ω 18A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
18*
18*
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
72
DM
@ T = 25°C
P
100
W
W/°C
V
D
C
Linear Derating Factor
0.8
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
634
mJ
A
AS
I
18
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
10
mJ
V/ns
AR
dv/dt
2.5
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
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1
5/25/01
IRF5Y3205CM
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
55
—
—
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.056
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.022
Ω
V
= 10V, I = 18A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
18
—
—
—
—
—
4.0
—
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
= 15V, I
= 18A ➀
DS
I
25
250
V
= 55V ,V =0V
DSS
DS GS
µA
—
V
= 44V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
170
32
V
V
= 20V
= -20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=10V, I = 18A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= 44V
DS
74
t
t
t
t
22
V
= 28V, I = 18A,
DD
GS
D
80
70
V
=10V, R = 2.5Ω
G
ns
d(off)
f
55
L
+ L
Total Inductance
—
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
3660
1200
440
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
18*
72
S
A
SM
V
t
1.3
130
410
V
ns
T = 25°C, I = 18A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 18A, di/dt ≤ 100A/µs
j
F
V
Q
Reverse Recovery Charge
nC
≤30V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.25
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5Y3205CM
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
BOTTOM 4.5V
BOTTOM 4.5V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
18A
=
I
D
1.5
1.0
0.5
0.0
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
4.5
5.0
5.5
6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
°
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF5Y3205CM
7000
6000
5000
4000
3000
2000
1000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I
D
= 18A
V
V
V
= 44V
= 27V
= 11V
C
= C + C
DS
DS
DS
iss
gs
gd
gd ,
C
= C
rss
C
= C + C
gd
oss
ds
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
0
40
80
120
160
200
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
1000
°
T = 150 C
OPERATION IN THIS AREA
J
LIMITED BY R (on)
DS
100
10
1
°
T = 25 C
J
ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.2
0.6
1.0
1.4
1.8
2.2
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF5Y3205CM
RD
60
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5Y3205CM
1600
1200
800
400
0
I
D
TOP
8.0A
11.4A
BOTTOM 18A
15V
DRIVER
L
V
D S
D.U .T
.
R
G
+
V
D D
-
I
A
AS
2V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF5Y3205CM
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ 18A, di/dt ≤ 230 A/µs,
SD
maximum junction temperature.
V
≤ 100V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= 25 V, Starting T = 25°C, L= 3.9mH
J
DD
Peak I
= 18A, VGS =10V, R = 25Ω
AS
G
Case Outline and Dimensions —TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/01
www.irf.com
7
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