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IRF5Y5305CMPBF [INFINEON]

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IRF5Y5305CMPBF
型号： IRF5Y5305CMPBF
厂家： Infineon    Infineon
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PD - 94028  
HEXFET® POWER MOSFET  
THRU-HOLE (TO-257AA)  
IRF5Y5305CM  
55V, P-CHANNEL  
Product Summary  
Part Number  
BV  
RDS(on)  
ID  
DSS  
IRF5Y5305CM  
-55V  
0.065Ω -18A*  
Fifth Generation HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievethelowestpossibleon-resistance  
per silicon unit area. This benefit, combined with the  
fast switching speed and ruggedized device design  
that HEXFET power MOSFETs are well known for,  
providesthedesignerwithanextremelyefficientdevice  
for use in a wide variety of applications.  
TO-257AA  
Features:  
n
n
n
n
n
n
n
Low RDS(on)  
Avalanche Energy Ratings  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Light Weight  
These devices are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy pulse  
circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= -10V, T = 25°C Continuous Drain Current  
-18*  
-15  
D
GS  
C
A
I
D
= -10V, T = 100°C Continuous Drain Current  
C
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
-72  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
Linear Derating Factor  
0.6  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
160  
mJ  
A
AS  
I
-16  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
3.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063in./1.6mm from case for 10sec)  
4.3 (Typical)  
* Current is limited by package  
For footnotes refer to the last page  
www.irf.com  
1
11/3/00  
IRF5Y5305CM  
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source Breakdown Voltage  
-55  
—
—
—
—
V
V
= 0V, I = -250µA  
D
GS  
V/°C Reference to 25°C, I = -1.0mA  
∆BV  
/∆T Temperature Coefficient of Breakdown  
-0.053  
DSS  
J
D
Voltage  
R
Static Drain-to-Source On-State  
Resistance  
—
—
0.065  
Ω
V
= 10V, I = -15A  
GS D  
DS(on)  
➀
V
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
-2.0  
8.0  
—
—
—
—
—
-4.0  
—
V
V
= V , I = -250µA  
GS(th)  
fs  
DS  
GS  
D
Ω
g
S ( )  
V
DS  
= -25V, I  
= -16A ➀  
DS  
I
-25  
-250  
V
= -55V ,V =0V  
GS  
DSS  
DS  
µA  
—
V
= -44V,  
DS  
= 0V, T =125°C  
V
GS  
J
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8  
-100  
100  
70  
V
V
= -20V  
= 20V  
GSS  
GSS  
GS  
GS  
nA  
nC  
Q
Q
Q
V
=-10V, I = -16A  
GS D  
g
gs  
gd  
d(on)  
r
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
FallTime  
17  
30  
V
= -44V  
DS  
t
t
t
t
26  
V
DD  
= -28V, I = -16A,  
D
125  
56  
R
= 7.5Ω  
G
ns  
d(off)  
f
74  
L
+ L  
Total Inductance  
—
Measured from drain lead (6mm/  
0.25in. from package) to source  
lead (6mm/0.25in. from package)  
S
D
nH  
C
C
C
Input Capacitance  
Output Capacitance  
—
—
—
1290  
495  
—
—
—
V
= 0V, V  
= -25V  
iss  
oss  
rss  
GS  
DS  
f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
203  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) ➀  
Diode Forward Voltage  
—
—
—
—
—
—
—
—
—
—
-18*  
-72  
S
A
SM  
V
t
-1.3  
100  
250  
V
ns  
T = 25°C, I = -15A, V  
= 0V ➀  
j
SD  
rr  
S
GS  
Reverse Recovery Time  
T = 25°C, I = -16A, di/dt ≥ 100A/µs  
j
F
Q
Reverse Recovery Charge  
nC  
V
≤ -30V ➀  
RR  
DD  
t
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
on  
* Current is limited by package  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
Junction-to-Case  
—
—
1.67  
°C/W  
thJC  
Note: Corresponding Spice and Saber models are available on the G&S Website.  
For footnotes refer to the last page  
2
www.irf.com  
IRF5Y5305CM  
100  
10  
1
100  
10  
1
VGS  
-15V  
-10V  
-8.0V  
-7.0V  
-6.0V  
-5.5V  
-5.0V  
VGS  
-15V  
-10V  
-8.0V  
-7.0V  
-6.0V  
-5.5V  
-5.0V  
TOP  
TOP  
BOTTOM -4.5V  
BOTTOM -4.5V  
-4.5V  
-4.5V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
T = 25 C  
J
°
T = 150 C  
J
0.1  
0.1  
0.1  
0.1  
1
10  
100  
1
10  
100  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
10  
1
2.0  
1.5  
1.0  
0.5  
0.0  
-18A  
=
I
D
°
T = 25 C  
J
°
T = 150 C  
J
V
= -25V  
DS  
V
= -10V  
20µs PULSE WIDTH  
GS  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
4
6
8
10 12  
°
T , Junction Temperature( C)  
J
-V , Gate-to-Source Voltage (V)  
GS  
Fig 4. Normalized On-Resistance  
Fig 3. Typical Transfer Characteristics  
Vs.Temperature  
www.irf.com  
3
IRF5Y5305CM  
20  
16  
12  
8
2500  
2000  
1500  
1000  
500  
I
D
= -16A  
V
= 0V,  
f = 1MHz  
gd , ds  
GS  
C
= C + C  
C
SHORTED  
iss  
gs  
V
V
V
=-44V  
=-28V  
=-11V  
C
= C  
gd  
DS  
DS  
DS  
rss  
C
= C + C  
oss  
ds  
gd  
C
iss  
C
oss  
4
C
rss  
FOR TEST CIRCUIT  
SEE FIGURE 13  
0
1
0
10  
100  
0
20  
40  
60  
80  
-V , Drain-to-Source Voltage (V)  
DS  
Q
, Total Gate Charge (nC)  
G
Fig 5. Typical Capacitance Vs.  
Fig 6. Typical Gate Charge Vs.  
Drain-to-SourceVoltage  
Gate-to-SourceVoltage  
1000  
100  
10  
1
OPERATION IN THIS AREA  
LIMITED BY R  
(on)  
°
T = 150 C  
DS  
J
100  
10  
1
°
T = 25 C  
J
1ms  
0ms  
Tc = 25°C  
Tj = 150°C  
Single Pulse  
1
V
= 0 V  
GS  
0.1  
0.2  
0.8  
1.4  
2.0  
2.6  
1
10  
, Drain-toSource Voltage (V)  
100  
-V ,Source-to-Drain Voltage (V)  
SD  
V
DS  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
ForwardVoltage  
4
www.irf.com  
IRF5Y5305CM  
30  
25  
20  
15  
10  
5
RD  
LIMITED BY PACKAGE  
VDS  
VGS  
D.U.T.  
RG  
-
+
VDD  
-10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
t
t
r
t
t
f
d(on)  
d(off)  
V
GS  
10%  
0
25  
50  
T
75  
100  
125  
150  
°
, Case Temperature ( C)  
C
90%  
V
Fig 9. Maximum Drain Current Vs.  
DS  
CaseTemperature  
Fig 10b. Switching Time Waveforms  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
P
DM  
0.1  
t
0.02  
0.01  
1
SINGLE PULSE  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D = t / t  
1
2
2. Peak T = P  
x
Z
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRF5Y5305CM  
350  
300  
250  
200  
150  
100  
50  
I
D
L
V
DS  
TOP  
-7.2A  
-10A  
BOTTOM -16A  
D.U.T  
R
G
V
DD  
A
I
AS  
DRIVER  
--10V
0.01  
t
Ω
p
15V  
Fig 12a. Unclamped Inductive Test Circuit  
0
25  
50  
75  
100  
125  
150  
I
AS  
°
Starting T , Junction Temperature( C)  
J
Fig 12c. Maximum Avalanche Energy  
Vs. DrainCurrent  
t
p
V
(BR)DSS  
Fig 12b. Unclamped Inductive Waveforms  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
Q
G
.2µF  
-12V  
.3µF  
-10V  
-
V
+
DS  
Q
Q
GD  
GS  
D.U.T.  
V
GS  
V
G
-3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 13b. Gate Charge Test Circuit  
Fig 13a. Basic Gate Charge Waveform  
6
www.irf.com  
IRF5Y5305CM  
Footnotes:  
 Repetitive Rating; Pulse width limited by  
ƒ I  
≤ -16A, di/dt ≤ -213 A/µs,  
SD  
maximum junction temperature.  
V
≤ -55V, T ≤ 150°C  
J
DD  
„ Pulse width ≤ 400 µs; Duty Cycle ≤ 2%  
‚ V  
= -25 V, Starting T = 25°C, L= 1.3mH  
J
DD  
Peak I  
= -16A,  
R = 25Ω  
G
AS  
Case Outline and Dimensions —TO-257AA  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000  
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111  
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630  
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936  
Data and specifications subject to change without notice. 11/00  
www.irf.com  
7

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