IRF5Y31N20 [INFINEON]
POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*); 功率MOSFET N沟道( VDSS = 200V , RDS(ON) = 0.092ohm ,ID = 18A * )型号: | IRF5Y31N20 |
厂家: | Infineon |
描述: | POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*) |
文件: | 总7页 (文件大小:100K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94349A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y31N20
200V, N-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF5Y31N20
200V
0.092Ω 18A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
18*
14
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
72
DM
@ T = 25°C
P
100
W
W/°C
V
D
C
Linear Derating Factor
0.8
V
Gate-to-Source Voltage
±20
170
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
18
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
10
mJ
V/ns
AR
dv/dt
1.7
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
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1
01/07/02
IRF5Y31N20
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.27
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.092
Ω
V
= 10V, I = 14A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
3.0
14
—
—
—
—
—
5.5
—
V
V
V
= V , I = 250µA
GS(th)
fs
DS
DS
GS
D
Ω
g
S ( )
=15V, I
= 14A ➀
DS
I
25
250
V
= 200V ,V =0V
DSS
DS GS
µA
—
V
= 160V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
100
32
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=10V, I = 18A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
V
= 160V
DS
46
t
t
t
t
30
V
DD
= 100V, I = 18A,
D
148
50
V
= 10V, R = 2.5Ω
GS G
ns
d(off)
27
f
L
+ L
Total Inductance
—
Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
S
D
nH
l C
C
Input Capacitance
—
—
—
2480
370
73
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
pF
oss
rss
C
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
18*
72
S
A
SM
V
t
1.3
300
2.3
V
ns
T = 25°C, I = 18A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 18A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
µC
V
DD
≤ 25V ➀
RR
t
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.25
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5Y31N20
100
10
1
100
10
1
VGS
15V
12V
10V
VGS
15V
12V
10V
TOP
TOP
8.0V
8.0V
7.5V
7.0V
6.5V
7.5V
7.0V
6.5V
BOTTOM 6.0V
BOTTOM 6.0V
6.0V
6.0V
20µs PULSE WIDTH
20µs PULSE WIDTH,T = 25°C
Tj = 150°C
J
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100
10
1
18A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
°
T = 25 C
J
= 50V
20µs PULSE WIDTH
V
DS
V
= 10V
GS
0.1
6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
6.5
7.0
7.5 8.0
°
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF5Y31N20
4000
3000
2000
1000
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 18A
GS
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C + C
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
1000
OPERATION IN THIS AREA
T
= 150°C
LIMITED BY R (on)
J
DS
100
10
1
100µs
T
= 25°C
J
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
10ms
V
= 0V
1.6
GS
0.1
0.1
1
10
100
1000
0.0
0.4
0.8
1.2
2.0
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage ( V )
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF5Y31N20
RD
24
20
16
12
8
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5Y31N20
400
300
200
100
0
I
D
TOP
8.0A
11.4A
BOTTOM 18A
15V
DRIVER
L
V
D S
D.U.T
AS
.
R
G
+
V
D D
-
I
A
V
2
GS
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
V
(BR )D SS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
V
10V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
3mA
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF5Y31N20
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ 18A, di/dt ≤ 100 A/µs,
SD
maximum junction temperature.
V
≤ 200V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= 25 V, Starting T = 25°C, L= 1.0 mH
J
DD
Peak I
= 18A, V
=10V, R = 25Ω
AS
GS
G
Case Outline and Dimensions —TO-257AA
0.13 [.005]
A
5.08 [.200]
4.83 [.190]
3.81 [.150]
3.56 [.140]
10.66 [.420]
10.42 [.410]
3X Ø
1.14 [.045]
0.89 [.035]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
B
10.92 [.430]
10.42 [.410]
1
2
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
0.88 [.035]
0.64 [.025]
3X Ø
3.05 [.120]
Ø 0.50 [.020]
C
A
B
P IN AS S IG NMENTS
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
GATE
DRAIN
SOURCE
3. DIME NS IONS ARE S HOWN IN MIL L IME T E RS [INCHE S ].
4. OUTLINE CONFORMS TO JEDEC OUTLINE TO-257AA.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/02
www.irf.com
7
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