IRF5NJ5305 [INFINEON]
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*); POWER MOSFET P- CHANNEL （ VDSS = -55V ， RDS（ON） = 0.065ohm ，ID = -22A * ）
| 型号： | IRF5NJ5305 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*) |
| 文件： | 总7页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94033
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJ5305
55V, P-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF5NJ5305
-55V
0.065Ω -22A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C Continuous Drain Current
-22*
-16
D
GS
C
A
I
D
= -10V, T = 100°C Continuous Drain Current
C
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
-88
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
160
mJ
A
AS
I
-16
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
2.8
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
1.0 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
11/10/00
IRF5NJ5305
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-55
—
—
—
—
V
V
= 0V, I = -250µA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.049
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.065
Ω
V
= 10V, I = -16A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
8.0
—
—
—
—
—
-4.0
—
V
V
= V , I = -250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
= -25V, I
= -16A ➀
DS
I
-25
-250
V
= -55V ,V =0V
GS
DSS
DS
µA
—
V
= -44V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
70
V
V
= -20V
= 20V
GSS
GSS
GS
GS
nA
nC
Q
Q
Q
V
=-10V, I = -16A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
17
30
V
= -44V
DS
t
t
t
t
26
V
DD
= -28V, I = -16A,
D
125
56
R
= 6.8Ω
G
ns
d(off)
f
74
L
+ L
Total Inductance
—
S
D
Measured from the center of
nH
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
1290
495
203
—
—
—
V
= 0V, V
= -25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-22*
-88
S
A
SM
V
t
-1.3
100
250
V
ns
T = 25°C, I = -16A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = -16A, di/dt ≥ 100A/µs
j
F
Q
Reverse Recovery Charge
nC
V
≤ -30V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRF5NJ5305
100
10
1
100
10
1
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
TOP
BOTTOM -4.5V
BOTTOM -4.5V
-4.5V
-4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 150 C
J
°
T = 25 C
J
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.0
1.5
1.0
0.5
0.0
-22A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -25V
DS
20µs PULSE WIDTH
V
= -10V
GS
4
6
8
10 12
-60 -40 -20
0
20 40 60 80 100 120 140 160
-V , Gate-to-Source Voltage (V)
GS
°
T , Junction Temperature( C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF5NJ5305
2500
2000
1500
1000
500
20
16
12
8
V
= 0V,
f = 1MHz
C
I
D
= -16A
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
V
V
=-44V
=-28V
=-11V
DS
DS
DS
C
= C
gd
rss
C
= C + C
oss
ds
C
iss
C
oss
C
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
20
40
60
80
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
1000
100
10
1
OPERATION IN THIS AREA
°
LIMITED BY R
(on)
T = 150 C
J
DS
100
10
1
°
T = 25 C
J
1ms
Tc = 25°C
Tj = 150°C
1
0ms
V
= 0 V
Single Pulse
GS
0.1
0.2
0.6
1.0
1.4
1.8
1
10
, Drain-toSource Voltage (V)
100
-V ,Source-to-Drain Voltage (V)
SD
-V
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF5NJ5305
30
25
20
15
10
5
RD
LIMITED BY PACKAGE
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
90%
V
Fig 9. Maximum Drain Current Vs.
DS
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5NJ5305
350
300
250
200
150
100
50
I
L
D
V
DS
TOP
-7.2A
-10A
BOTTOM -16A
D.U.T
R
G
V
DD
A
I
AS
DRIVER
--10V
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
I
AS
°
Starting T , Junction Temperature( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF5NJ5305
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤ -16A, di/dt ≤ -230 A/µs,
SD
maximum junction temperature.
V
≤ -55V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= -25 V, Starting T = 25°C, L= 1.3mH
J
DD
Peak I
= -16A,
R = 25Ω
G
AS
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 11/00
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7
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