IRF5NJ540SCX [INFINEON]
IRF5NJ540SCX;
| 型号： | IRF5NJ540SCX |
| 厂家： | 
Infineon |
| 描述： | IRF5NJ540SCX |
| 文件： | 总7页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94020A
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJ540
100V, N-CHANNEL
Product Summary
Part Number
BV
DSS
RDS(on)
ID
IRF5NJ540
100V
0.052Ω
22A*
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
22*
16
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
88
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.60
±20
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
200
mJ
A
AS
I
16
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
4.1
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
1.0
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
7/13/01
IRF5NJ540
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 250µA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.11
V/°C
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.052
Ω
V
= 10V, I = 16A
DS(on)
GS D
➀
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
11
—
—
—
—
—
4.0
—
25
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
= 50V, I
= 16A ➀
DS
DS
I
V
= 100V ,V =0V
DSS
DS GS
µA
—
250
V
= 80V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
104
20
V
V
= 20V
GSS
GSS
GS
nA
nC
= -20V
GS
Q
Q
Q
V
=10V, I = 16A
GS D
g
gs
gd
d(on)
r
V
= 80V
DS
43
t
t
t
t
24
125
86
V
V
= 50V, I = 16A,
=10V, R = 7.5Ω
DD
GS
D
G
ns
Turn-Off Delay Time
FallTime
Total Inductance
d(off)
82
—
f
L
+ L
S
D
Measured from the center of
nH
drain pad to center of source pad
C
Input Capacitance
Output Capacitance
—
—
—
1487
353
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
C
C
pF
oss
rss
Reverse Transfer Capacitance
182
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
22*
88
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Q
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.3
V
T = 25°C, I = 16A, V
= 0V ➀
j
SD
S
GS
240
1.67 µC
nS
T = 25°C, I = 16A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 50V ➀
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
thJC
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRF5NJ540
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
22A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
4.0
5.0
V
6.0
7.0
8.0 9.0
10.0
°
T , Junction Temperature( C)
J
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF5NJ540
20
16
12
8
3000
2500
2000
1500
1000
500
I
D
= 16A
V
= 0V,
f = 1MHz
C
GS
iss
rss
oss
V
V
V
= 80V
= 50V
= 20V
C
= C + C
SHORTED
ds
DS
DS
DS
gs
gd ,
gd
C
C
= C
gd
= C + C
ds
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
20
40
60
80
100
120
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
°
T = 150 C
J
100
10
1
°
T = 25 C
J
1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0ms
1
V
= 0 V
GS
0.1
0.2
0.6
1.0
1.4
1.8
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF5NJ540
RD
30
25
20
15
10
5
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t
/ t
1 2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5NJ540
400
300
200
100
0
I
D
TOP
7.2A
10A
BOTTOM 16A
15V
DRIVER
L
V
D S
D.U .T
.
R
G
+
V
D D
-
I
A
AS
2V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
10V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF5NJ540
Footnotes:
Repetitive Rating; Pulse width limited by
I
SD
≤ 16A, di/dt ≤ 350 A/µs,
≤ 100V, T ≤ 150°C
maximum junction temperature.
V
DD
J
V
= 25 V, Starting T = 25°C, L=1.5mH
J
DD
Peak I
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
=16A, V
= 10 V, R = 25Ω
AS
GS
G
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/01
www.irf.com
7
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