IRAM136-3063B_11 [INFINEON]

Integrated Power Hybrid IC for High Voltage Motor Applications; 集成功率混合IC,适用于高压电机的应用
IRAM136-3063B_11
型号: IRAM136-3063B_11
厂家: Infineon    Infineon
描述:

Integrated Power Hybrid IC for High Voltage Motor Applications
集成功率混合IC,适用于高压电机的应用

电机 高压
文件: 总17页 (文件大小:237K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD-97288 RevC  
IRAM136-3063B  
Series  
Integrated Power Hybrid IC for  
High Voltage Motor Applications  
30A, 600V  
with Internal Shunt Resistor  
Description  
International Rectifier's IRAM136-3063B is a 30A, 600V Integrated Power Hybrid IC with Internal Shunt  
Resistor for Appliance Motor Drives applications such air conditioning systems and compressor drivers as  
well as for light industrial application. IR's technology offers an extremely compact, high performance AC  
motor driver in a single isolated package to simplify design.  
This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry  
benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-  
in temperature monitor and over-current and over-temperature protections, along with the short-circuit  
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and failsafe  
operation. Using a new developed single in line package (SiP3) with heat spreader for the power die along  
with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.  
Features  
• Integrated Gate Drivers  
• Temperature Monitor and Protection  
• Overcurrent shutdown  
• Low VCE(on) Advance Planar Super Rugged Technology  
• Undervoltage lockout for all channels  
• Matched propagation delay for all channels  
• 5V Schmitt-triggered input logic  
• Cross-conduction prevention logic  
• Lower di/dt gate driver for better noise immunity  
• Motor Power up to 3.3kW / 85~253 Vdc  
• Fully Isolated Package, Isolation 2000VRMS min  
Absolute Maximum Ratings  
Parameter  
Description  
Value  
Units  
V
V+  
CES / VRRM  
IGBT/Diode Blocking Voltage  
Positive Bus Input Voltage  
600  
450  
V
IO @ TC=25°C  
Maximum Output Current  
30  
IO @ TC=100°C  
A
RMS Phase Current (Note 1)  
Pulsed RMS Phase Current (Note 2)  
PWM Carrier Frequency  
15  
IO  
50  
FPWM  
20  
kHz  
W
PD  
Power dissipation per IGBT @ TC =25°C  
Isolation Voltage (1min)  
73  
VISO  
VRMS  
2000  
TJ (IGBT & Diode & IC)  
Maximum Operating Junction Temperature  
Operating Case Temperature Range  
Storage Temperature Range  
Mounting torque Range (M4 screw)  
+150  
-20 to +100  
-40 to +125  
0.7 to 1.17  
TC  
°C  
TSTG  
T
Nm  
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=6kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.  
Note 2: tP<100ms; TC=25°C; FPWM=6kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics"  
www.irf.com  
1
IRAM136-3063B  
Internal Electrical Schematic – IRAM136-3063B  
V+ (10)  
RS  
V- (12)  
R1  
R3  
R5  
VB1 (1)  
U, VS1 (2)  
C1  
C2  
C3  
VB2 (4)  
V, VS2 (5)  
VB3 (7)  
W, VS3 (8)  
R2  
22 21 20 19 18 17  
VB2 HO2 VS2 VB3 HO3 VS3  
23 VS1  
LO1 16  
LO2 15  
LO3 14  
24 HO1  
25 VB1  
1 VCC  
R4  
R15  
Driver IC  
2 HIN1  
3 HIN2  
4 HIN3  
HIN1 (13)  
HIN2 (14)  
HIN3 (15)  
R6  
LIN2 LIN3  
F
8
ITRIP EN RCIN VSS COM  
5 LIN1  
6
7
9
10  
11  
12 13  
LIN1 (16)  
LIN2 (17)  
LIN3 (18)  
FAULT(19)  
THERMISTOR  
R9  
R8  
POSISTOR  
I
SENSE (20)  
R11  
R12  
C7  
VDD (21)  
VSS (22)  
R14  
C4  
R7  
R13  
C5  
C6  
2
www.irf.com  
IRAM136-3063B  
Absolute Maximum Ratings (Continued)  
Symbol  
Parameter  
Min  
Max  
Units Conditions  
tP= 10ms,  
TJ = 150°C, TC=100°C  
Bootstrap Diode Peak Forward  
Current  
IBDF  
---  
4.5  
A
Bootstrap Resistor Peak Power  
(Single Pulse)  
PBR Peak  
VS1,2,3  
VB1,2,3  
VCC  
tP=100μs, TC =100°C  
---  
VB1,2,3 - 25  
-0.3  
25.0  
VB1,2,3 +0.3  
600  
W
V
High side floating supply offset  
voltage  
High side floating supply voltage  
V
Low Side and logic fixed supply  
voltage  
-0.3  
20  
V
Lower of  
(VSS+15V) or  
VCC+0.3V  
VIN  
Input voltage LIN, HIN, ITrip  
-0.3  
V
Inverter Section Electrical Characteristics @TJ= 25°C  
Symbol  
Parameter  
Min  
Typ  
Max Units Conditions  
Collector-to-Emitter Breakdown  
Voltage  
V(BR)CES  
VIN=5V, IC=500μA  
600  
---  
---  
---  
V
VIN=5V, IC=1.0mA  
(25°C - 150°C)  
Temperature Coeff. Of  
Breakdown Voltage  
ꢀV(BR)CES / ꢀT  
---  
0.5  
V/°C  
IC=15A, VCC=15V  
---  
---  
---  
---  
---  
---  
--  
1.90  
2.10  
5
2.7  
2.8  
150  
---  
Collector-to-Emitter Saturation  
Voltage  
VCE(ON)  
V
ꢂA  
V
IC=15A, VCC=15V, TJ=125°C  
VIN=5V, V+=600V  
VIN=5V, V+=600V, TJ=125°C  
IC=15A  
Zero Gate Voltage Collector  
Current  
ICES  
80  
1.6  
1.5  
--  
2.5  
2.2  
1.25  
1.10  
---  
VFM  
Diode Forward Voltage Drop  
IC=15A, TJ=125°C  
IF=1A  
Bootstrap Diode Forward Voltage  
Drop  
VBDFM  
V
IF=1A, TJ=125°C  
TJ=25°C  
---  
---  
---  
---  
RBR  
Bootstrap Resistor Value  
22  
ꢀRBR/RBR  
TJ=25°C  
Bootstrap Resistor Tolerance  
---  
5
%
Current Protection Threshold  
(positive going)  
IBUS_TRIP  
tON > 175μs  
44  
---  
58  
A
www.irf.com  
3
IRAM136-3063B  
Inverter Section Switching Characteristics @ TJ= 25°C  
Symbol  
Parameter  
Min  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
Typ  
550  
240  
790  
65  
Max Units Conditions  
IC=15A, V+=400V  
EON  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
870  
EOFF  
ETOT  
EREC  
tRR  
VCC=15V, L=2mH  
Energy losses include "tail" and  
diode reverse recovery  
300  
1170  
125  
---  
μJ  
ns  
μJ  
ns  
Diode Reverse Recovery energy  
Diode Reverse Recovery time  
Turn-On Switching Loss  
Turn-off Switching Loss  
Total Switching Loss  
See CT1  
50  
IC=15A, V+=400V  
VCC=15V, L=2mH, TJ=125°C  
Energy losses include "tail" and  
diode reverse recovery  
EON  
830  
400  
1230  
120  
140  
72  
1180  
550  
1730  
205  
---  
EOFF  
ETOT  
EREC  
tRR  
Diode Reverse Recovery energy  
Diode Reverse Recovery time  
Turn-On IGBT Gate Charge  
See CT1  
108  
nC IC=20A, V+=400V, VGE=15V  
QG  
TJ=150°C, IC=60A, VP=600V  
V+= 480V  
FULL SQUARE  
---  
RBSOA  
SCSOA  
Reverse Bias Safe Operating Area  
Short Circuit Safe Operating Area  
VCC=+15V to 0V  
See CT3  
TJ=150°C, VP=600V,  
V+= 500V,  
10  
---  
μs  
VCC=+15V to 0V  
See CT2  
Recommended Operating Conditions Driver Function  
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the  
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at  
15V differential  
Symbol  
VB1,2,3  
VS1,2,3  
VCC  
Definition  
Min  
VS+12  
Note 4  
12  
Typ  
VS+15  
---  
Max  
VS+20  
400  
Units  
High side floating supply voltage  
High side floating supply offset voltage  
Low side and logic fixed supply voltage  
T/ITRIP input voltage  
V
15  
20  
V
VT/ITRIP  
VIN  
VSS  
VSS+5  
VSS+5  
---  
---  
VSS  
Logic input voltage LIN, HIN  
High side PWM pulse width  
External dead time between HIN and LIN  
---  
V
HIN  
1
---  
μs  
μs  
Deadtime  
2
---  
---  
Note 3: For more details, see IR21363 data sheet  
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.  
(please refer to DT97-3 for more details)  
4
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IRAM136-3063B  
Static Electrical Characteristics Driver Function  
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are  
applicable to all six channels. (Note 3)  
Symbol  
VIH  
Definition  
Min  
3.0  
---  
Typ  
---  
Max  
---  
Units  
V
Logic "0" input voltage  
Logic "1" input voltage  
VIL  
---  
0.8  
11.6  
11.4  
---  
V
VCCUV+, VBSUV+ VCC and VBS supply undervoltage positive going threshold  
VCCUV-, VBSUV- VCC and VBS supply undervoltage negative going threshold  
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis  
10.6  
10.4  
---  
11.1  
10.9  
0.2  
5.2  
---  
V
V
V
VIN,Clamp  
IQBS  
Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10μA  
Quiescent VBS supply current VIN=0V  
Quiescent VCC supply current VIN=0V  
Offset Supply Leakage Current  
Input bias current VIN=5V  
4.9  
---  
5.5  
165  
3.35  
60  
V
μA  
mA  
μA  
μA  
μA  
μA  
μA  
mV  
mV  
IQCC  
---  
---  
ILK  
---  
---  
IIN+  
---  
200  
100  
30  
300  
220  
100  
1
IIN-  
Input bias current VIN=0V  
---  
ITRIP+  
ITRIP-  
V(ITRIP  
V(ITRIP,HYS)  
ITRIP bias current VITRIP=5V  
---  
ITRIP bias current VITRIP=0V  
---  
0
)
ITRIP threshold Voltage  
440  
---  
490  
70  
540  
---  
ITRIP Input Hysteresis  
Dynamic Electrical Characteristics  
Driver only timing unless otherwise specified.)  
Symbol  
Parameter  
Min  
Typ  
Max Units Conditions  
Input to Output propagation turn-  
on delay time (see fig.11)  
TON  
---  
600  
---  
ns  
ns  
VCC=VBS= 15V, IC=15A, V+=400V  
Input to Output propagation turn-  
off delay time (see fig. 11)  
TOFF  
---  
700  
---  
---  
TFLIN  
TBLT-Trip  
DT  
VIN=0 & VIN=5V  
VIN=0 & VIN=5V  
VBS=VCC=15V  
Input Filter time (HIN, LIN)  
ITRIP Blancking Time  
100  
100  
220  
200  
150  
290  
ns  
ns  
ns  
Dead Time (VBS=VDD=15V)  
360  
75  
VCC= VBS= 15V, external dead  
time> 400ns  
Matching Propagation Delay Time  
(On & Off)  
MT  
---  
---  
40  
---  
ns  
μs  
ITrip to six switch to turn-off  
propagation delay (see fig. 2)  
3.75  
VCC=VBS= 15V, IC=15A, V+=400V  
TITrip  
TC = 25°C  
---  
---  
34  
29  
---  
---  
Post ITrip to six switch to turn-off  
clear time (see fig. 2)  
TFLT-CLR  
ms  
TC = 100°C  
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5
IRAM136-3063B  
Thermal and Mechanical Characteristics  
Symbol  
Rth(J-C)  
Rth(J-C)  
Rth(C-S)  
CD  
Parameter  
Min  
Typ  
1.5  
2.5  
0.1  
---  
Max Units Conditions  
1.7  
Thermal resistance, per IGBT  
Thermal resistance, per Diode  
Thermal resistance, C-S  
Creepage Distance  
---  
Flat, greased surface. Heatsink  
---  
---  
---  
°C/W compound thermal conductivity  
1W/mK  
---  
---  
3.5  
mm See outline Drawings  
Internal Current Sensing Resistor - Shunt Characteristics  
Symbol  
Parameter  
Min  
9.4  
0
Typ  
9.6  
---  
Max Units Conditions  
RShunt  
TC = 25°C  
Resistance  
9.8  
mꢁ  
TCoeff  
Temperature Coefficient  
Power Dissipation  
Temperature Range  
200 ppm/°C  
PShunt  
-40°C < TC < 100°C  
---  
---  
4.5  
W
TRange  
-20  
---  
125  
°C  
Internal NTC - Thermistor Characteristics  
Parameter  
Definition  
Min  
Typ  
100  
2.52  
4250  
---  
Max Units Conditions  
R25  
R125  
B
TC = 25°C  
Resistance  
97  
103  
2.8  
kꢁ  
kꢁ  
TC = 125°C  
Resistance  
2.25  
4165  
-40  
B-constant (25-50°C)  
4335  
125  
---  
k
R2 = R1e [B(1/T2 - 1/T1)]  
Temperature Range  
°C  
TC = 25°C  
Typ. Dissipation constant  
---  
1
mW/°C  
Input-Output Logic Level Table  
V+  
HIN1,2,3 LIN1,2,3  
ITRIP  
U,V,W  
V+  
0
Ho  
Hin1,2,3  
0
0
0
1
0
1
1
X
1
0
1
X
(13,14,15)  
U,V,W  
(2,5,8)  
IC  
Driver  
X
X
Lin1,2,3  
Lo  
(16,17,18)  
6
www.irf.com  
IRAM136-3063B  
Figure 1. Input/Output Timing Diagram  
HIN1,2,3  
LIN1,2,3  
50%  
50%  
ITRIP  
U,V,W  
50%  
50%  
TITRIP  
TFLT-CLR  
Figure 2. ITRIP Timing Waveform  
Note 7: The shaded area indicates that both high-side and low-side switches are off and therefore the half-  
bridge output voltage would be determined by the direction of current flow in the load.  
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7
IRAM136-3063B  
Module Pin-Out Description  
Pin  
1
Name  
VB1  
Description  
High Side Floating Supply Voltage 1  
Output 1 - High Side Floating Supply Offset Voltage  
none  
U, VS1  
NA  
2
3
VB2  
4
High Side Floating Supply voltage 2  
Output 2 - High Side Floating Supply Offset Voltage  
none  
V,VS2  
NA  
5
6
VB3  
7
High Side Floating Supply voltage 3  
Output 3 - High Side Floating Supply Offset Voltage  
none  
W,VS3  
8
9
NA  
V+  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
Positive Bus Input Voltage  
NA  
none  
V-  
Negative Bus Input Voltage  
HIN1  
HIN2  
HIN3  
LIN1  
Logic Input High Side Gate Driver - Phase 1  
Logic Input High Side Gate Driver - Phase 2  
Logic Input High Side Gate Driver - Phase 3  
Logic Input Low Side Gate Driver - Phase 1  
Logic Input Low Side Gate Driver - Phase 2  
Logic Input Low Side Gate Driver - Phase 3  
Temperature Monitor and Fault Function  
Current Monitor  
LIN2  
LIN3  
Fault/TMON  
ISense  
VCC  
+15V Main Supply  
VSS  
Negative Main Supply  
8
www.irf.com  
IRAM136-3063B  
Typical Application Connection IRAM136-3063B  
VB1  
BOOT-STRAP  
CAPACITORS  
U
VB2  
3-Phase AC  
MOTOR  
V
VB3  
V+  
W
V+  
DC BUS  
CAPACITORS  
V-  
HIN1  
+5V  
HIN2  
HIN3  
LIN1  
LIN2  
LIN3  
FLT/TMON  
ITRIP  
CONTROLLER  
Vcc (15 V)  
VSS  
12kohm  
+5V  
Fault & Temp  
Monitor  
IMonitor  
+15V  
10m  
0.1m  
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce  
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins  
will further improve performance.  
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors  
shown connected between these terminals should be located very close to the module pins. Additional  
high frequency capacitors, typically 0.1μF, are strongly recommended.  
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be  
made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value  
must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see  
maximum ratings Table on page 3).  
4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).  
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent  
condition must be cleared before resuming operation.  
6. Fault/TMON Monitor pin must be pulled-up to +5V.  
www.irf.com  
9
IRAM136-3063B  
22  
20  
18  
16  
14  
12  
10  
8
TC = 80ºC  
TC = 90ºC  
TC = 100ºC  
6
4
2
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
PWM Switching Frequency - kHz  
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency  
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6  
18  
16  
14  
12  
10  
8
FPWM = 6kHz  
FPWM = 9kHz  
6
FPWM = 12kHz  
4
2
0
1
10  
Modulation Frequency - Hz  
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency  
Sinusoidal Modulation, V+=400V, TJ=100°C, Modulation Depth=0.8, PF=0.6  
100  
10  
www.irf.com  
IRAM136-3063B  
350  
300  
250  
200  
150  
100  
50  
IOUT = 18A  
IOUT = 15A  
IOUT = 12A  
0
0
2
4
6
8
10  
PWM Switching Frequency - kHz  
Figure 5. Total Power Losses vs. PWM Switching Frequency  
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6  
12  
14  
16  
18  
20  
350  
300  
250  
200  
150  
100  
50  
FPWM = 12kHz  
FPWM = 9kHz  
FPWM = 6kHz  
0
0
2
4
6
8
10  
Output Phase Current - ARMS  
Figure 6. Total Power Losses vs. Output Phase Current  
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6  
12  
14  
16  
18  
20  
22  
24  
www.irf.com  
11  
IRAM136-3063B  
160  
140  
120  
100  
80  
60  
FPWM = 6kHz  
PWM = 9kHz  
PWM = 12kHz  
F
F
40  
20  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
Output Phase Current - ARMS  
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase  
Sinusoidal Modulation, V+=400V, TJ=150°C, Modulation Depth=0.8, PF=0.6  
160  
150  
140  
130  
120  
110  
100  
98.3  
100  
65  
70  
75  
80  
85  
90  
95  
105  
Internal Thermistor Temperature Equivalent Read Out - °C  
Figure 8. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature  
Sinusoidal Modulation, V+=400V, Iphase=15Arms, fsw=6kHz, fmod=50Hz, MI=0.8, PF=0.6  
12  
www.irf.com  
IRAM136-3063B  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
+5V  
REXT  
VTherm  
RTherm  
TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM  
°C  
°C  
25  
30  
35  
40  
45  
50  
55  
60  
65  
70  
75  
80  
85  
°C  
-40 4397119  
-35 3088599  
-30 2197225  
-25 1581881  
-20 1151037  
100000  
79222  
63167  
50677  
40904  
33195  
27091  
22224  
18322  
15184  
12635  
10566  
8873  
90  
95  
7481  
6337  
5384  
4594  
3934  
3380  
2916  
2522  
2190  
1907  
1665  
1459  
1282  
100  
105  
110  
115  
120  
125  
130  
135  
140  
145  
150  
-15  
-10  
-5  
0
846579  
628988  
471632  
357012  
272500  
209710  
162651  
127080  
Min  
Avg.  
Max  
5
10  
15  
20  
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150  
Thermistor Temperature - °C  
Figure 9. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and  
Normal Thermistor Resistance values vs. Temperature Table.  
16  
15  
14  
13  
12  
11  
10  
9
15ꢀF  
10ꢀF  
8
7
6.8ꢀF  
6
5
4
4.7ꢀF  
3
2
1
0
0
5
10  
PWM Frequency - kHz  
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency  
15  
20  
www.irf.com  
13  
IRAM136-3063B  
Figure 11. Switching Parameter Definitions  
Figure 11a. Input to Output propagation turn-on  
delay time.  
Figure 11b. Input to Output propagation turn-off  
delay time.  
Figure 11c. Diode Reverse Recovery.  
14  
www.irf.com  
IRAM136-3063B  
V+  
Ho  
Lo  
Hin1,2,3  
Lin1,2,3  
IC  
Driver  
U,V,W  
Figure CT1. Switching Loss Circuit  
V+  
Ho  
IN  
IO  
Hin1,2,3  
IC  
Driver  
U,V,W  
Lin1,2,3  
Lo  
Io  
Figure CT2. S.C.SOA Circuit  
V+  
Ho  
IN  
IO  
Hin1,2,3  
IC  
Driver  
U,V,W  
Io  
Lin1,2,3  
Lo  
Figure CT3. R.B.SOA Circuit  
www.irf.com  
15  
IRAM136-3063B  
Package Outline IRAM136-3063B  
Missing Pin : 3,6,9,11  
note3  
note4  
İ
IRAM136-3063B  
P 4KB00  
note2  
ꢁꢁ  
note5  
IJ
note1: Unit Tolerance is +0.5mm,  
᫝᫝᫝ Unless Otherwise Specified.  
note2: Mirror Surface Mark indicates Pin1 Identification.  
note3: Characters Font in this drawing differs from  
᫝᫝᫝᫝ Font shown on Module.  
note4: Lot Code Marking.  
Characters Font in this drawing differs from  
᫝᫝᫝᫝ Font shown on Module.  
note5: “P” Character denotes Lead Free.  
Characters Font in this drawing differs from  
Font shown on Module.  
ı
Dimensions in mm  
For mounting instruction see AN-1049  
16  
www.irf.com  
IRAM136-3063B  
Package Outline IRAM136-3063B2  
Missing Pin : 3,6,9,11  
note3  
note4  
İ
IRAM136-3023B  
P 4DB00  
note2  
ꢁꢁ  
note5  
IJ
note1: Unit Tolerance is +0.5mm,  
᫝᫝᫝ Unless Otherwise Specified.  
note2: Mirror Surface Mark indicates Pin1 Identification.  
note3: Part Number Marking.  
Characters Font in this drawing differs from  
᫝᫝᫝᫝ Font shown on Module.  
note4: Lot Code Marking.  
Characters Font in this drawing differs from  
᫝᫝᫝᫝ Font shown on Module.  
ı
note5: “P” Character denotes Lead Free.  
Characters Font in this drawing differs from  
Font shown on Module.  
Dimensions in mm  
For mounting instruction see AN-1049  
Data and Specifications are subject to change without notice  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information  
2011-06-14  
www.irf.com  
17  

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