IRAMS10UP60A [INFINEON]
Plug N DriveTM Integrated Power Module for Appliance Motor Drive; 插销N传动系统的集成电源模块的家电电机驱动器
| 型号： | IRAMS10UP60A |
| 厂家： | 
Infineon |
| 描述： | Plug N DriveTM Integrated Power Module for Appliance Motor Drive |
| 文件： | 总18页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94640
IRAMS10UP60A
Series
TM
Plug N Drive Integrated Power
Module for Appliance Motor Drive
Description
International Rectifier's IRAMS10UP60A is an Integrated Power Module developed and optimized for elec-
tronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive
technology offers an extremely compact, high performance AC motor-driver in a single isolated package for
a very simple design.
A built-in temperature monitor and over-temperature/over-current protection, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe
operation.
The integration of the bootstrap diodes for the high-side driver section, and the single polarity power
supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost
reduction advantages.
Features
• Integrated Gate Drivers and Bootstrap Diodes.
• Temperature Monitor
• Temperature and Overcurrent shutdown
• Fully Isolated Package.
• Low VCE (on) Non Punch Through IGBT Technology.
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• Low side IGBT emitter pins for current conrol
• Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power range 0.4~0.75kW / 85~253 Vac
Absolute Maximum Ratings
Parameter
Description
Max. Value
Units
Maximum IGBT Blocking Voltage
600
V
VCES
Io @ TC - 25oC
RMS Phase Current
10
Io @TC - 100oC
A
RMS Phase Current
5
15
Maximum Peak Phase Current (tp<100ms)
Maximum PWM Carrier Frequency
Maximum Power dissipation per Phase
Isolation Voltage (1min)
Ipk
20
kHz
W
Fp
20
Pd
2000
Viso
VRMS
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque Range (M3 screw)
-40 to +150
-40 to +150
0.8 to 1.0
TJ (IGBT & Diodes)
TJ (Driver IC)
T
°C
Nm
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1
2/24/03
IRAMS10UP60A
Internal Electrical Schematic - IRAMS10UP60A
V+ (10)
VRU (12)
VRV (13)
VRW (14)
Rg1
Rg3
Rg5
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
Rg2
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
23 VS1
LO1 16
LO2 15
LO3 14
24 HO1
25 VB1
1 VCC
Rg4
R3
Rg6
Driver IC
2 HIN1
3 HIN2
4 HIN3
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN2 LIN3
F
8
ITRIP EN RCIN VSS COM
5 LIN1
6
7
9
10 11
12 13
LIN1 (18)
LIN2 (19)
LIN3 (20)
R1
T/Itrip (21)
RT
THERMISTOR
R2
C
VDD (22)
VSS (23)
2
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IRAMS10UP60A
Inverter Section Electrical Characteristics @ TJ = 25°C
Symbol
Parameter
Min
Typ Max Units Conditions
Collector-to-Emitter
Breakdown Voltage
V(BR)CES
600
---
---
---
V
VIN=0V, IC=20mA
Temperature Coeff. Of
Breakdown Voltage
VIN=0V, IC=1.0mA
(25°C - 150°C)
D V(BR)CES / D T
---
0.57
V/°C
Collector-to-Emitter Saturation
Voltage
---
---
---
---
---
---
1.7
2.0
5
2.0
2.4
15
IC=5A
IC=5A
TJ=25°C, VDD=15V
TJ=150°C
VCE(ON)
ICES
V
mA
V
Zero Gate Voltage Collector
Current
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150°C
IC=5A
10
40
1.8
1.3
2.35
1.7
VFM
Diode Forward Voltage Drop
IC=5A, TJ=150°C
Inverter Section Switching Characteristics @ TJ = 25°C
Symbol
Eon
Parameter
Min
---
---
---
---
---
---
Typ Max Units Conditions
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-on Swtiching Loss
Turn-off Switching Loss
Total Switching Loss
155
70
180
90
IC=5A, V+=400V
VDD=15V, RG=33W, L=2mH
Eoff
mJ
mJ
Etot
225
260
130
390
270
300
160
460
TJ=25°C
TJ=150°C
See CT1
Eon
Eoff
Energy losses include "tail" and
diode reverse recovery
Etot
Diode Reverse Recovery
energy
Erec
trr
---
---
30
95
40
mJ
TJ=150°C, V+ =400V VDD=15V,
IF=5A, L=2mH, RG=33W
Diode Reverse Recovery time
110
ns
TJ=150°C, IC=5A, VP=600V
V+=480V, VDD=+15V to 0V
Reverse Bias Safe Operating
Area
FULL SQUARE
RBSOA
SCSOA
RG=33W
See CT3
TJ=150°C, VP=600V,
ms RG=33W, V+=360V,
Short Circuit Safe Operating
Area
10
---
---
VDD=+15V to 0V
See CT2
Thermal Resistance
Symbol
Parameter
Min
Typ Max Units Conditions
Junction to case thermal
resistance, each IGBT under
inverter operation.
Rth(J-C)
---
4.2
4.7
°C/W
Flat, greased surface.
Heatsink compound thermal
conductivity - 1W/mK
Junction to case thermal
resistance, each Diode under
inverter operation.
Thermal Resistance case to
sink
Rth(J-C)
---
---
5.5
0.1
6.5
---
°C/W
°C/W
Rth(C-S)
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3
IRAMS10UP60A
Absolute Maximum Ratings Driver function
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to VSS. (Note 1)
Symbol
Definition
Min
Max
Units
V+
High Side offset voltage
-0.3
600
V
VB1,2,3
VDD
VIN
High Side floating supply voltage
Low Side and logic fixed supply voltage
Input voltage LIN, HIN, T/ITRIP
Juction Temperature
-0.3
-0.3
-0.3
-40
20
20
7
V
V
V
TJ
150
°C
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to VSS . The V offset rating is tested with all supplies biased
S
at 15V differential. (Note 1)
Sym bol
Definition
Min
Max
Units
VB1,2,3
High side floating supply voltage
VS+12
VS+20
V
VS1,2,3
VDD
VITRIP
VIN
High side floating supply offset voltage
Low side and logic fixed supply voltage
T/ITRIP input voltage
Note 2
12
450
20
V
V
VSS
VSS+5
VSS+5
Logic input voltage LIN, HIN
VSS
Static Electrical Characteristics Driver Function
V
(V , V 1,2,3) = 15V unless otherwise specified. The V and I parameters are referenced to V and are
BIAS CC BS
IN
IN
SS
applicable to all six channels. (Note 1)
Sym bol
VIN,th+
Definition
Min
---
Typ
---
Max
3
Units
Positive going input threshold
Negative going input threshold
V
V
VIN,th-
0.8
---
---
VCCUV+
VBSUV+
VCC and VBS supply undervoltage
Positive going threshold
10.6
10.4
---
11.1
10.9
0.2
11.6
11.4
---
V
V
V
VCCUV-
VBSUV-
VCC and VBS supply undervoltage
Negative going threshold
VCCUVH
VBSUVH
VCC and VBS supply undervoltage
Ilockout hysteresis
IQBS
IQCC
ILK
Quiescent VBS supply current
---
---
70
1.6
---
120
2.3
50
mA
mA
mA
mA
V
Quiscent VCC supply current
Offset Supply Leakage Current
Input bias current (OUT=HI or OUT=LO)
---
IIN+
---
120
4.3
---
V(T/ITRIP
)
T/ITRIP threshold Voltage (OUT=HI or OUT=LO) (Note 3)
3.85
4.75
4
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IRAMS10UP60A
Dynamic Electrical Characteristics
VDD = VBS = VBIAS = 15V, Io= 1A, VD=9V , PWMin= 2kHz, V
= V
V
= V
OFF
ON
,th+,
,th-
IN
IN
IN
IN
TA = 25°C unless otherwise specified.
Symbol
Definition
Input to output propagation turn-on delay time (see fig.11)
Min
Typ
Max Units
TON
-
470
-
-
-
-
-
ns
ns
ns
ns
ms
TOFF
Input to output propagation turn-off delay time (see fig. 11)
Dead Time
-
-
-
-
615
300
750
9
DT
I/TTrip
TFCLTRL
T/ITrip to six switch to turn-off propagation delay (see fig. 2)
Post ITrip to six switch to turn-off clear time (see fig. 2)
InternalNTC-ThermistorCharacteristics
Parameter
Typ
Units
Conditions
R25
Resistance
Resistance
Resistance
100 +/- 5%
kW
TC = 25°C
R125
R25/50
2.522 + 17.3 % /- 14.9%
kW
kW
TC = 125°C
[B(1/T2 - 1/T1)]
4250 +/- 3%
-40 / 125
1
R2 = R1e
Temperature Range
°C
Typ. Dissipation constant
mW/°C
TC = 25°C
Note 1: For more details, see IR21365 data sheet
Note 2: Logic operational for Vs from COM-5V to COM+600V. Logic stata held for Vs from COM-5V to
COM-VBS. (please refer to DT97-3 for more details)
Thermistor Built-in IRAMS10UP60A
VCC (22)
NTC
IR21365
12K
T/ITRIP (21)
4.3K
VSS (23)
Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating
conditions is 3.3V.
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5
IRAMS10UP60A
Figure1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
T/Itrip
U,V,W
Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
Vbus
HIN1,2,3 LIN1,2,3
Itrip
U,V,W
0
0
0
1
0
1
1
X
1
0
1
X
Vbus
0
X
X
Ho
Lo
Hin1,2,3
(15,16,17)
U,V,W
(8,5,2)
IC
Driver
Lin1,2,3
(18,19,20)
6
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IRAMS10UP60A
Figure 2. T/ITrip Timing Waveform
HIN1,2,3
LIN1,2,3
50%
T/Itrip
U,V,W
50%
tfltclr
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
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7
IRAMS10UP60A
Module Pin-Out Description
Pin
1
Name
VB3
Description
High S ide Floating Supply Voltage 3
Output 3 - High S ide Floating Supply Offset Voltage
none
2
W ,VS 3
na
3
4
VB2
High S ide Floating Supply voltage 2
Output 2 - High S ide Floating Supply Offset Voltage
none
5
V, VS2
na
6
7
VB1
High S ide Floating Supply voltage 1
Output 1 - High S ide Floating Supply Offset Voltage
none
8
U,V S 1
na
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
V+
Positive Bus Input Voltage
na
none
LE1
Low S ide Em itter Connection - Phase 1
Low S ide Em itter Connection - Phase 2
Low S ide Em itter Connection - Phase 3
Logic Input High S ide Gate Driver - Phase 1
Logic Input High S ide Gate Driver - Phase 2
Logic Input High S ide Gate Driver - Phase 3
Logic Input Low S ide Gate Driver - Phase 1
Logic Input Low S ide Gate Driver - Phase 2
Logic Input Low S ide Gate Driver - Phase 3
Temperature Monitor and Shut-dow n Pin
+15V Main Supply
LE2
LE3
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
T /Itrip
VCC
V S S
Negative Main Supply
8
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IRAMS10UP60A
Typical Application Connection IRAMS10UP60A
VBW
VSW
U
BOOT-STRAP
CAPACITORS
VBV
VSV
V
3-ph AC
MOTOR
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
VBU
VSU
W
V+
DC BUS
CAPACITORS
LeU
LeV
PHASE LEG
CURRENT
SENSE
LeW
HINU
HINV
HINW
LINU
LINV
LINW
Driver IC
CONTROLLER
T/ITRIP
VDD(15 V)
VSS
5k
TEMP
SENSE
4.3K
1m
3.3 V
NTC
8.2k
0.1
m
10m
12k
O/C
SENSE
(ACTIVE LOW)
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to re-
duce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the
module pins will further improve performance.
2. In order to provide good decoupling between Vcc-Gnd and Vb-Vs terminals, the capacitors shown
connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1mF, are strongly recommended.
3. Low inductance shunt resistors should be used for phase leg current sensing. Similarly, the length of
the traces between pins 12, 13 and 14 to the corresponding shunt resistors should be kept as small as
possible.
4. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be
made based on IR design tip DN 98-2a or application note AN-1044.
5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous
current in inverter.
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9
IRAMS10UP60A
10
9
8
7
6
5
4
3
2
1
0
Tc = 100 °C
Tc = 110 °C
Tc = 120 °C
0
2
4
6
8
10
12
14
16
18
20
PWM SWITCHING FREQUENCY (kHz)
Figure 3. Maximum sinusoidal phase current as function of switching frequency
VBUS=400V, Tj=150°C, Modulation Depth=0.8, PF=0.6
7
6
5
4
3
2
1
0
Switching Frequency :
12KHz
16KHz
20KHz
1
10
100
Motor Current Modulation Frequency (Hz)
Figure 4. Maximum sinusoidal phase current as function of modulation frequency
VBUS=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6
10
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IRAMS10UP60A
16
14
12
10
8
350
300
250
200
150
100
50
CURRENT
VOLTAGE
6
4
2
0
0
-2
-50
0
0.05
0.1
0.15
0.2
TIME ( s)
0.25
0.3
0.35
0.4
m
Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, VBUS=310V
TURNOFF AT Tj = 125 °CRg = 33 OHM310 V
360
6
5
300
CURRENT
VOLTAGE
4
240
180
120
60
3
2
1
0
0
-1
-60
0
0.2
0.4
0.6
0.8
1
TIME ( s)
m
Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, VBUS=310V
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11
IRAMS10UP60A
120
100
80
60
40
20
0
MINIMUM
NOMINAL
MAXIMUM
0
20
40
60
80
100
120
140
TEMPERATURE (°C)
Figure 7. Variation of thermistor resistance with temperature
4
3.5
3
NOMINAL
MINIMUM
MAXIMUM
2.5
2
1.5
1
0.5
0
0
10
20
30
40
50
60
70
80
90 100 110 120 130 140
TEMPERATURE (°C)
Figure 8. Variation of temperature sense voltage with thermistor tempera-
ture using external bias resistance of 4.3KW, Vcc=15V
12
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IRAMS10UP60A
200
180
160
140
120
100
80
60
40
80
90
100
110
120
130
140
150
160
170
THERMISTOR TEMPERATURE (°C)
Figure 9. Estimated maximum IGBT junction temperature with thermistor
temperature
14
12
10
8
6
4
2
0
0
5
10
15
20
25
SWITCHING FREQUENCY (kHz)
Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching
Frequency
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13
IRAMS10UP60A
Figure 11. Switching Parameter Definitions
VCE
IC
IC
VCE
90% IC
50%
HIN/LIN
90% IC
HIN/LIN
50%
HIN/LIN
HIN/LIN
10%
VCE
10% IC
10% IC
TON
TOFF
tf
tr
Figure 11b. Input to Output
propagation turn-off delay timet
Figure 11a. Input to Output propaga-
tion turn-on delay time
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery
14
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IRAMS10UP60A
Vbus
5V
Ho
Hin1,2,3
Lin1,2,3
IC
Driver
U,V,W
Lo
Figure CT1. Switching Loss Circuit
Vbus
IN
PWM=4ms
Ho
Hin1,2,3
1k
10k
IC
Driver
VCC
Io
U,V,W
Io
Lin1,2,3
5VZD
Lo
IN
Figure CT2. S.C.SOA Circuit
Vbus
Ho
Lo
Hin1,2,3
10k
IN
Io
1k
VCC
IC
Driver
U,V,W
Io
5VZD
Lin1,2,3
IN
Figure CT3. R.B.SOA Circuit
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15
IRAMS10UP60A
PackageOutline
note 3
note 2
027-E2D24
note 1
Standard pin leadforming option
Notes:
Dimensions in mm
1 - Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
16
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IRAMS10UP60A
PackageOutline
note 3
note 2
027-E2D24
note 1
Pin leadforming option -2
Notes:
Dimensions in mm
1 - Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
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Visit us at www.irf.com for sales contact information.09/02
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