IRAMS06UP60A [INFINEON]

Plug N DriveTM Integrated Power Module for Appliance Motor Drive; 插销N传动系统的集成电源模块的家电电机驱动器
IRAMS06UP60A
型号: IRAMS06UP60A
厂家: Infineon    Infineon
描述:

Plug N DriveTM Integrated Power Module for Appliance Motor Drive
插销N传动系统的集成电源模块的家电电机驱动器

驱动器 运动控制电子器件 电源电路 信号电路 电动机控制 电机 局域网
文件: 总18页 (文件大小:446K)
中文:  中文翻译
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PD-95831 RevB  
IRAMS06UP60A  
Series  
6A, 600V  
TM  
Plug N Drive Integrated Power  
Module for Appliance Motor Drive  
Description  
International Rectifier’s IRAMS06UP60A is an Integrated Power Module developed and optimized for  
electronic motor control in appliance applications specifically for VF compressor drives for refrigerators and  
freezer or in heating and ventilation as electronic fan controls. The IRAMS06UP60A offers an extremely  
compact, high performance AC motor-driver in a single isolated package for a very simple design.  
A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and  
integrated under-voltage lockout function, deliver high level of protection and fail-safe operation.  
The integration of the bootstrap diodes for the high-side driver section, and the single polarity power  
supply required to drive the internal circuitry, simplify the utilization of the module and deliver further  
cost reduction advantages.  
Features  
• Integrated Gate Drivers and Bootstrap Diodes  
• TemperatureMonitor  
• Overcurrentshutdown  
• Fully Isolated Package.  
• Low VCE(on) Non Punch Through IGBT  
Technology  
• Undervoltage lockout for all channels  
• Matched propagation delay for all channels  
• Schmitt-triggered input logic  
• Cross-conduction prevention logic  
• Lower di/dt gate driver for better noise immunity  
• Motor Power range 0.1~0.5kW / 85~253 Vac  
• Isolation 2000VRMS /1min  
Absolute Maximum Ratings  
Parameter  
Description  
Max. Value  
Units  
VCES  
V+  
Maximum IGBT Blocking Voltage  
Positive Bus Input Voltage  
600  
V
450  
Io @ TC=25°C  
RMS Phase Current  
6
Io @ TC=100°C  
RMS Phase Current  
3
10  
A
Ipk  
Fp  
Pd  
Maximum Peak Phase Current (tp<100ms)  
Maximum PWM Carrier Frequency  
Maximum Power dissipation per Phase  
Isolation Voltage (1min)  
20  
kHz  
W
7.5  
V
iso  
2000  
VRMS  
TJ (IGBT & Diodes)  
TJ (Driver IC)  
T
Operating Junction temperature Range  
Operating Junction temperature Range  
Mounting torque Range (M3 screw)  
-40 to +150  
-40 to +150  
0.8 to 1.0  
°C  
Nm  
www.irf.com  
1
IRAMS06UP60A  
InternalElectricalSchematic-IRAMS06UP60A  
V+(10)  
VRU (12)  
VRV (13)  
VRW (14)  
Rg1  
Rg3  
Rg5  
VB1 (7)  
U, VS1 (8)  
VB2 (4)  
V, VS2 (5)  
VB3 (1)  
W, VS3 (2)  
Rg2  
22 21 20 19 18 17  
VB2 HO2 VS2 VB3 HO3 VS3  
23 VS1  
LO1 16  
LO2 15  
LO3 14  
24 HO1  
25 VB1  
1 VCC  
Rg4  
R3  
Rg6  
Driver IC  
2 HIN1  
3 HIN2  
4 HIN3  
HIN1 (15)  
HIN2 (16)  
HIN3 (17)  
LIN2 LIN3  
F
8
ITRIP EN RCIN VSS COM  
5 LIN1  
6
7
9
10  
11  
12 13  
LIN1 (18)  
LIN2 (19)  
R1  
LIN3 (20)  
T/ITRIP (21)  
R2  
RT  
THERMISTOR  
C
VDD (22)  
VSS (23)  
2
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IRAMS06UP60A  
Inverter Section Electrical Characteristics @ TJ = 25°C  
Symbol  
Parameter  
Min  
Typ  
Max  
Units Conditions  
Collector-to-Emitter Breakdown  
Voltage  
V(BR)CES  
600  
---  
---  
V
V/°C  
V
VIN=5V, IC=250mA  
Temperature Coeff. Of  
Breakdown Voltage  
VIN=5V, IC=1.0mA  
(25°C - 150°C)  
DV(BR)CES / DT  
VCE(ON)  
---  
0.3  
---  
---  
---  
---  
---  
1.9  
2.2  
15  
2.4  
2.6  
45  
IC=3A, VDD=15V  
Collector-to-Emitter Saturation  
Voltage  
IC=3A, VDD=15V, TJ=150°C  
VIN=5V, V+=600V  
VIN=5V, V+=600V, TJ=150°C  
Zero Gate Voltage Collector-to-  
Emitter Current  
ICES  
mA  
60  
170  
Zero Gate Voltage Phase-to-  
phase Current  
Ilk_module  
VFM  
--  
--  
50  
mA  
VIN=5V, V+=600V  
---  
---  
1.45  
1.25  
1.85  
1.65  
IC=3A  
Diode Forward Voltage Drop  
V
IC=3A, TJ=150°C  
Inverter Section Switching Characteristics @ TJ = 25°C  
Conditions  
IC=3A, V+=400V  
VDD=15V, L=1mH  
Symbol  
Eon  
Parameter  
Min  
---  
---  
---  
---  
---  
---  
Typ  
130  
65  
Max  
235  
120  
355  
345  
150  
495  
Units  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-on Swtiching Loss  
Turn-off Switching Loss  
Total Switching Loss  
Eoff  
mJ  
Etot  
195  
200  
90  
TJ=25°C  
TJ=150°C  
See CT1  
Eon  
Eoff  
mJ  
Energy losses include "tail" and  
diode reverse recovery  
Etot  
290  
Diode Reverse Recovery  
energy  
Erec  
trr  
---  
---  
50  
110  
200  
mJ  
TJ=150°C, V+ =400V VDD=15V,  
IF=3A, L=1mH  
Diode Reverse Recovery time  
150  
ns  
TJ=150°C, IC=3A, VP=600V  
V+=480V, VDD=+15V to 0V  
See CT3  
Reverse Bias Safe Operating  
Area  
FULL SQUARE  
---  
RBSOA  
SCSOA  
TJ=150°C, VP=600V,  
V+=360V,  
Short Circuit Safe Operating  
Area  
10  
---  
ms  
VDD=+15V to 0V  
See CT2  
Thermal Resistance  
Symbol  
Parameter  
Min  
Typ  
Max  
Units Conditions  
Junction to case thermal  
resistance, each IGBT under  
inverter operation.  
Rth(J-C)  
---  
---  
6.5  
°C/W  
Flat, greased surface.  
Heatsink compound thermal  
conductivity - 1W/mK  
Junction to case thermal  
resistance, each Diode under  
inverter operation.  
Rth(J-C)  
---  
---  
---  
9
°C/W  
°C/W  
Thermal Resistance case to  
sink  
Rth(C-S)  
0.1  
---  
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3
IRAMS06UP60A  
Absolute Maximum Ratings Driver Function  
Absolute Maximum Ratings indicate substaines limits beyond which damage to the device may occur. All voltage pa-  
rameters are absolute voltages referenced to VSS . (Note 1)  
Symbol  
VS1,2,3  
VB1,2,3  
VDD  
Definition  
Min  
-0.3  
-0.3  
-0.3  
-0.3  
-40  
Max  
600  
20  
Units  
V
V
High Side offset voltage  
High Side floating supply voltage  
Low Side and logic fixed supply voltage  
Input voltage LIN, HIN, T/ITRIP  
Juction Temperature  
20  
V
VIN  
7
V
TJ  
150  
°C  
Recommended Operating Conditions Driver Function  
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within  
the recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies bi-  
ased at 15V differential (Note 1). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor  
to VDD  
Symbol  
VB1,2,3  
VS1,2,3  
VDD  
Definition  
Min  
VS+12  
Note 2  
12  
Max  
VS+20  
450  
Units  
High side floating supply voltage  
High side floating supply offset voltage  
Low side and logic fixed supply voltage  
T/ITRIP input voltage  
V
20  
V
V
VITRIP  
VIN  
VSS  
VSS+5  
VSS+5  
Logic input voltage LIN, HIN  
VSS  
Static Electrical Characteristics Driver Function  
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are appli-  
cable to all six channels. (Note 1)  
Symbol  
VIN,th+  
Definition  
Positive going input threshold  
Negative going input threshold  
Min  
3.0  
---  
Typ  
---  
Max  
---  
Units  
V
V
VIN,th-  
---  
0.8  
VCCUV+  
VBSUV+  
VCC and VBS supply undervoltage  
Positive going threshold  
10.6  
10.4  
---  
11.1  
10.9  
0.2  
11.6  
11.4  
---  
V
V
V
VCCUV-  
VBSUV-  
VCC and VBS supply undervoltage  
Negative going threshold  
VCCUVH  
VBSUVH  
VCC and VBS supply undervoltage  
Ilockout hysteresis  
IQBS  
IQCC  
ILK  
Quiescent VBS supply current  
---  
---  
70  
1.6  
---  
120  
2.3  
50  
mA  
mA  
mA  
mA  
mA  
V
Quiscent VCC supply current  
Offset Supply Leakage Current  
Input bias current (OUT=LO)  
Input bias current (OUT=HI)  
---  
IIN+  
IIN+  
---  
100  
200  
4.3  
220  
300  
4.75  
---  
V(ITRIP  
)
ITRIP threshold Voltage (OUT=HI or OUT=LO)  
3.85  
4
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IRAMS06UP60A  
Dynamic Electrical Characteristics  
VDD=VBS=VBIAS=15V, Io=1A, VD=9V, PWMIN=2kHz, VIN_ON=VIN  
TA=25°C, unless otherwise specified  
_
th+, VIN_OFF=VIN_th-  
Symbol  
TON  
Definition  
Min  
Typ  
470  
615  
290  
750  
9
Max  
Units  
ns  
Input to output propagation turn-on delay time (see fig.11)  
Input to output propagation turn-off delay time (see fig. 11)  
Dead Time  
-
-
-
-
-
-
-
-
-
-
TOFF  
ns  
DT  
ns  
I/TTrip  
TFCLTRL  
T/ITrip to six switch to turn-off propagation delay (see fig. 2)  
Post ITrip to six switch to turn-off clear time (see fig. 2)  
ns  
ms  
Internal NTC - Thermistor Characteristics  
Parameter  
Typ  
100 +/- 3%  
2.522 + 17.3 % /- 14.9%  
4250 +/- 2%  
-40 / 125  
Units  
kW  
Conditions  
TC = 25°C  
R25  
R125  
B
Resistance  
Resistance  
kW  
TC = 125°C  
R2 = R1e [B(1/T2 - 1/T1)]  
B-constant (25-50°C)  
k
Temperature Range  
°C  
Typ. Dissipation constant  
1
mW/°C  
TC = 25°C  
Note 1: For more details, see IR21365 data sheet  
Note 2: Logic operational for Vs from V- -5V to V- +600V. Logic state held for Vs from V- -5V to V- -VBS. (please refer to  
DT97-3 for more details)  
Thermistor Built-in IRAMS06UP60A  
VCC (22)  
NTC  
IR21365  
12K  
T/ITRIP (21)  
6.8k  
VSS (23)  
Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating conditions is 3.3V.  
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5
IRAMS06UP60A  
HIN1,2,3  
LIN1,2,3  
HO1,2,3  
LO1,2,3  
Itrip  
U,V,W  
Figure1. Input/Output Timing Diagram  
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output  
voltage would be determined by the direction of current flow in the load.  
V+  
HIN1,2,3 LIN1,2,3  
Itrip  
U,V,W  
0
0
0
1
0
1
1
X
1
0
1
X
V+  
0
X
Ho  
Lo  
X
Hin1,2,3  
(15,16,17)  
U,V,W  
(8,5,2)  
IC  
Driver  
Lin1,2,3  
(18,19,20)  
6
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IRAMS06UP60A  
HIN1,2,3  
LIN1,2,3  
50%  
T/Itrip  
U,V,W  
50%  
tfltclr  
Figure 2. ITrip Timing Waveform  
Note 6: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output  
voltage would be determined by the direction of current flow in the load.  
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7
IRAMS06UP60A  
Module Pin-Out Description  
Pin  
1
Name  
VB3  
Description  
High Side Floating Supply Voltage 3  
Output 3 - High Side Floating Supply Offset Voltage  
none  
2
W,VS3  
na  
3
4
VB2  
High Side Floating Supply voltage 2  
Output 2 - High Side Floating Supply Offset Voltage  
none  
5
V,VS2  
na  
6
7
VB1  
High Side Floating Supply voltage 1  
Output 1 - High Side Floating Supply Offset Voltage  
none  
8
U,VS1  
na  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
V+  
Positive Bus Input Voltage  
na  
none  
LE1  
Low Side Emitter Connection - Phase 1  
Low Side Emitter Connection - Phase 2  
Low Side Emitter Connection - Phase 3  
Logic Input High Side Gate Driver - Phase 1  
Logic Input High Side Gate Driver - Phase 2  
Logic Input High Side Gate Driver - Phase 3  
Logic Input Low Side Gate Driver - Phase 1  
Logic Input Low Side Gate Driver - Phase 2  
Logic Input Low Side Gate Driver - Phase 3  
Temperature Monitor and Shut-down Pin  
+15V Main Supply  
LE2  
LE3  
HIN1  
HIN2  
HIN3  
LIN1  
LIN2  
LIN3  
T/Itrip  
VCC  
VSS  
Negative Main Supply  
8
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IRAMS06UP60A  
Typical Application Connection IRAMS06UP60A  
VBW  
VSW  
U
BOOT-STRAP  
CAPACITORS  
VBV  
VSV  
V
3-ph AC  
MOTOR  
CURRENT SENSING CAN USE A  
SINGLE SENSE RESISTOR OR PHASE  
LEG SENSING AS SHOWN  
VBU  
VSU  
W
V+  
DC BUS  
CAPACITORS  
LeU  
LeV  
PHASE LEG  
CURRENT  
SENSE  
LeW  
HINU  
HINV  
HINW  
LINU  
LINV  
LINW  
Driver IC  
CONTROLLER  
T/ITRIP  
VDD(15 V)  
VSS  
5k  
TEMP  
SENSE  
6.8K  
1m  
3.3 V  
NTC  
10.2k  
0.1  
m
10m  
12k  
O/C  
SENSE  
(ACTIVE LOW)  
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and  
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-  
mance.  
2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected be-  
tween these terminals should be located very close to the module pins. Additional high frequency capacitors, typically  
0.1mF, are strongly recommended.  
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on  
IR design tip DN 98-2a, application note AN-1044 or Figure 9.  
4. Low inductance shunt resistors shuld be used for phase leg current sensing. Similarly, the length of the traces be-  
tween pins 12, 13 and 14 to the corresponding shunt resistors should be kept as small as possible.  
5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous current in  
inverter.  
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9
IRAMS06UP60A  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Tc= 100°C  
Tc= 110°C  
Tc= 120°C  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
Switching frequency (kHz)  
Figure 3. Maximum sinusoidal phase current as function of switching frequency  
V+=400V, Tj=150°C, Modulation Depth=0.8, PF=0.6  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
12 kHz  
16 kHz  
20 kHz  
1
10  
100  
Modulation frequency (Hz)  
Figure 4. Maximum sinusoidal phase current as function of modulation frequency  
V+=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6  
10  
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IRAMS06UP60A  
9
8
450  
Current  
Voltage  
400  
350  
300  
250  
200  
150  
100  
50  
7
6
5
4
3
2
1
0
0
-1  
-50  
0.000  
0.100  
0.200  
0.300  
0.400  
0.500  
0.600  
0.700  
0.800  
0.900  
1.000  
Time (ms)  
Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, V+=400V  
4.5  
4
450  
400  
350  
300  
250  
200  
150  
100  
50  
3.5  
3
Current  
Voltage  
2.5  
2
1.5  
1
0.5  
0
0
-0.5  
-50  
0.000  
0.100  
0.200  
0.300  
0.400  
0.500  
0.600  
0.700  
0.800  
0.900  
1.000  
Time (ms)  
Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, V+=400V  
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11  
IRAMS06UP60A  
1000  
Maximum  
Nominal  
Minimum  
100  
10  
1
0
20  
40  
60  
80  
100  
120  
140  
Temperature (°C)  
Figure 7. Variation of thermistor resistance with temperature  
12  
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IRAMS06UP60A  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
Vbus=400V  
Imot=3Arms  
fsw=20kHz  
80  
60  
70  
80  
90  
100  
110  
120  
Thermistor temperature (°C)  
Figure 8. Estimated maximum IGBT junction temperature with thermistor tempera-  
ture  
20  
17.5  
15  
15  
12.5  
10  
7.5  
5
6.8  
4.7  
3.3  
2.5  
0
2.2  
1.5  
1
0
5
10  
15  
20  
Frequency (kHz)  
Figure 9. Recommended minimum Bootstrap Capacitor value Vs Switching Frequency  
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13  
IRAMS06UP60A  
Figure 11. Switching Parameter Definitions  
VCE  
IC  
IC  
VCE  
90% IC  
50%  
90% IC  
HIN/LIN  
HIN/LIN  
50%  
HIN/LIN  
HIN/LIN  
10%  
VCE  
10% IC  
10% IC  
TON  
TOFF  
tf  
tr  
Figure 11b. Input to Output  
propagation turn-off delay time  
Figure 11a. Input to Output propagation  
turn-on delay time  
IF  
VCE  
HIN/LIN  
Irr  
trr  
Figure 11c. Diode Reverse Recovery  
14  
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IRAMS06UP60A  
V+  
5V  
Ho  
Lo  
Hin1,2,3  
Lin1,2,3  
IC  
Driver  
U,V,W  
Figure CT1. Switching Loss Circuit  
V+  
IN  
Ho  
PWM=4ms  
Hin1,2,3  
1k  
10k  
IC  
Driver  
VCC  
Io  
U,V,W  
Io  
Lin1,2,3  
5VZD  
Lo  
VP=Peak Voltage on the IGBT die  
IN  
Figure CT2. S.C.SOA Circuit  
V+  
Ho  
Hin1,2,3  
10k  
IN  
1k  
VCC  
IC  
U,V,W  
Io  
Driver  
Io  
5VZD  
Lin1,2,3  
Lo  
IN  
VP=Peak Voltage on the IGBT die  
Figure CT3. R.B.SOA Circuit  
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15  
IRAMS06UP60A  
Package Outline  
note 3  
note 2  
027-E2D24  
IRAMS06UP60A  
note 1  
Standard pin leadforming option  
Notes:  
Dimensions in mm  
1- Marking for pin 1 identification  
2- Product Part Number  
3- Lot and Date code marking  
For mounting instruction, see AN1049  
16  
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IRAMS06UP60A  
Package Outline  
note 3  
note 2  
027-E2D24  
IRAMS06UP60A-2  
note 1  
Pin leadforming option -2  
Notes:  
Dimensions in mm  
1- Marking for pin 1 identification  
2- Product Part Number  
3- Lot and Date code marking  
Data and Specifications are subject to change without notice  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information  
09/04  
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17  

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