IRAMS06UP60B-2PBF [INFINEON]
AC Motor Controller, 9A, PZFM25;
| 型号： | IRAMS06UP60B-2PBF |
| 厂家： | 
Infineon |
| 描述： | AC Motor Controller, 9A, PZFM25 驱动器 运动控制电子器件 电源电路 信号电路 电动机控制 电机 局域网 |
| 文件： | 总18页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95832 RevC
IRAMS06UP60B
Series
TM
Plug N Drive Integrated Power
6A, 600V
Module for Appliance Motor Drive
with Internal Shunt Resistor
Description
International Rectifier’s IRAMS06UP60B is an Integrated Power Module developed and optimized for
electronic motor control in appliance applications specifically for VF compressor drives for refrigerators and
freezer or in heating and ventilation as electronic fan controls. The IRAMS06UP60B offers an extremely
compact, high performance AC motor-driver in a single isolated package for a very simple design.
An internal shunt is included and offers easy current feedback and overcurrent monitor for precise control
and safe operation. A built-in temperature monitor and over-current protection, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe
operation. The integration of the bootstrap diodes for the high-side driver section, and the single polarity
power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further
cost reduction advantages.
Features
• Internal Shunt Resistor
• Integrated Gate Drivers and Bootstrap Diodes
• Temperature Monitor
• Overcurrent shutdown
• Fully Isolated Package.
• Low VCE(on) Non Punch Through IGBT Technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise
immunity
• Motor Power range 0.1~0.5kW / 85~253 Vac
• Isolation 2000VRMS /1min
Absolute Maximum Ratings
Parameter
Description
Max. Value
Units
VCES
V+
Maximum IGBT Blocking Voltage
Positive Bus Input Voltage
600
V
450
Io @ TC=25°C
RMS Phase Current
6
Io @ TC=100°C
RMS Phase Current
3
9
A
Ipk
Fp
Pd
Max Peak Phase Current (tp<100ms) (see Note 1)
Maximum PWM Carrier Frequency
Maximum Power dissipation per Phase
Isolation Voltage (1min)
20
kHz
W
7.5
V
iso
2000
VRMS
TJ (IGBT & Diodes)
TJ (Driver IC)
T
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque Range (M3 screw)
-40 to +150
-40 to +150
0.8 to 1.0
°C
Nm
Note 1: Limited by current protection, see table "Inverter Section Electrical Characteristics" on page 3
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1
IRAMS06UP60B
InternalElectricalSchematic-IRAMS06UP60B
V+(10)
V- (12)
VB1 (7)
U, VS1 (8)
VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)
22 21 20 19 18 17
23 VS1
LO1 16
VB2 HO2 VS2 VB3 HO3 VS3
24 HO1
25 VB1
1 VCC
LO2 15
LO3 14
Driver IC
2 HIN1
3 HIN2
4 HIN3
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN2 LIN3
F
8
ITRIP EN RCIN VSS COM
10 11 12 13
5 LIN1
6
7
9
LIN1 (18)
LIN2 (19)
LIN3 (20)
FLT-EN(21)
ITRIP (22)
VTH (13)
VCC (14)
THERMISTOR
VSS (23)
2
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IRAMS06UP60B
Inverter Section Electrical Characteristics @ TJ = 25°C
Symbol
Parameter
Min
Typ
Max
Units Conditions
Collector-to-Emitter Breakdown
Voltage
V(BR)CES
600
---
---
V
V/°C
V
VIN=5V, IC=250µA
Temperature Coeff. Of
Breakdown Voltage
VIN=5V, IC=1.0mA
(25°C - 150°C)
∆V(BR)CES / ∆T
VCE(ON)
---
0.3
---
---
---
---
---
1.9
2.2
15
2.4
2.6
45
IC=3A, VDD=15V
Collector-to-Emitter Saturation
Voltage
IC=3A, VDD=15V, TJ=150°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150°C
Zero Gate Voltage Collector-to-
Emitter Current
ICES
µA
60
170
Zero Gate Phase-to-Phase
Current
Ilk_module
VFM
--
--
50
µA
V
VIN=5V, V+=600V
---
---
1.45
1.25
1.85
1.65
IC=3A
Diode Forward Voltage Drop
IC=3A, TJ=150°C
Tj=-40°C to 150°C (Overcurrent
duration ≥ 6µs)
Current Protection Threashold
(positive going)
IBUS_Trip
8.5
---
10.5
A
Inverter Section Switching Characteristics @ TJ = 25°C
Conditions
IC=3A, V+=400V
VDD=15V, L=1mH
Symbol
Eon
Parameter
Min
---
---
---
---
---
---
---
---
Typ
130
65
Max
235
120
355
345
150
495
110
200
Units
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Eoff
µJ
Etot
195
200
90
TJ=25°C
See CT1
Eon
Turn-on Swtiching Loss
Turn-off Switching Loss
Total Switching Loss
TJ=150°C
Eoff
µJ
Energy losses include "tail" and
diode reverse recovery
TJ=150°C, V+ =400V VDD=15V,
Etot
290
50
Erec
trr
Diode Rev. Recovery energy
Diode Reverse Recovery time
µJ
ns
IF=3A, L=1mH
150
TJ=150°C, IC=3A, VP=600V
V+=480V, VDD=+15V to 0V
See CT3
Reverse Bias Safe Operating
Area
FULL SQUARE
---
RBSOA
SCSOA
TJ=150°C, VP=600V,
V+=360V, VDD=+15V to 0V
See CT2
Short Circuit Safe Operating
Area
10
---
µs
Thermal Resistance
Symbol
Parameter
Min
Typ
Max
Units Conditions
Junction to case thermal
resistance, each IGBT under
inverter operation.
Rth(J-C)
---
---
6.5
°C/W
Flat, greased surface.
Heatsink compound thermal
conductivity - 1W/mK
Junction to case thermal
resistance, each Diode under
inverter operation.
Rth(J-C)
---
---
---
9
°C/W
°C/W
Rth(C-S)
Case to sink thermal resistance
0.1
---
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3
IRAMS06UP60B
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate substained limits beyond which damage to the device may occur. All voltage pa-
rameters are absolute voltages referenced to VSS . (Note 2)
Symbol
VS1,2,3
VB1,2,3
VDD
Definition
Min
-0.3
-0.3
-0.3
-0.3
-40
Max
600
Units
V
V
High Side offset voltage
High Side floating supply voltage
Low Side and logic fixed supply voltage
Input voltage LIN, HIN, T/ITRIP
Juction Temperature
20
20
V
VIN
VSS+15
150
V
TJ
°C
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within
the recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies bi-
ased at 15V differential (Note 2). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor
to VDD
.
Symbol
VB1,2,3
VS1,2,3
VDD
Definition
Min
VS+12
Note 3
12
Max
VS+20
450
Units
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
Logic input voltage LIN, HIN
V
20
V
V
VIN
VSS
VSS+5
Static Electrical Characteristics Driver Function
VBIAS (VDD, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are appli-
cable to all six channels. (Note 2)
Symbol
VIN,th+
Definition
Positive going input threshold
Negative going input threshold
Min
3.0
---
Typ
---
Max
---
Units
V
V
VIN,th-
---
0.8
VCCUV+
VBSUV+
VCC and VBS supply undervoltage
Positive going threshold
10.6
10.4
---
11.1
10.9
0.2
11.6
11.4
---
V
V
V
VCCUV-
VBSUV-
VCC and VBS supply undervoltage
Negative going threshold
VCCUVH
VBSUVH
VCC and VBS supply undervoltage
Ilockout hysteresis
IQBS
IQCC
ILK
Quiescent VBS supply current
---
---
70
1.6
---
120
2.3
µA
mA
µA
µA
µA
V
Quiscent VCC supply current
Offset Supply Leakage Current
Input bias current (OUT=LO)
Input bias current (OUT=HI)
---
50
IIN+
IIN+
---
100
200
0.49
220
300
0.54
---
V(ITRIP
)
ITRIP threshold Voltage (OUT=HI or OUT=LO)
0.44
4
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IRAMS06UP60B
Dynamic Electrical Characteristics
VDD=VBS=VBIAS=15V, PWMIN=2kHz, VIN_ON=VIN
_th+, VIN_OFF=VIN_th-
TA=25°C, unless otherwise specified
Symbol
TON
Definition
Min
Typ
470
615
290
750
9
Max
Units
ns
Input to output propagation turn-on delay time (see fig.11)
Input to output propagation turn-off delay time (see fig. 11)
Dead Time
-
-
-
-
-
-
-
-
-
-
TOFF
ns
DT
ns
I/TTrip
TFCLTRL
T/ITrip to six switch to turn-off propagation delay (see fig. 2)
Post ITrip to six switch to turn-off clear time (see fig. 2)
ns
ms
Internal NTC - Thermistor Characteristics
Parameter
Typ
100 +/- 3%
2.522 ±10.9%
4250 +/- 2%
-40 / 125
1
Units
kΩ
Conditions
TC = 25°C
R25
R125
B
Resistance
Resistance
kΩ
TC = 125°C
R2 = R1e [B(1/T2 - 1/T1)]
B-constant (25-50°C)
k
Temperature Range
°C
Typ. Dissipation constant
mW/°C
TC = 25°C
Internal Current Sensing Resistor - Shunt Characteristics
Parameter
Units
Resistance
50 ±1%
±1%
mΩ
Tollerance
Max Power Dissipation
Temperature Range
1.5
W
-40 / 125
°C
Note 2: For more details, see IR21363 data sheet
Note 3: Logic operational for Vs from V- -5V to V- +600V. Logic state held for Vs from V- -5V to V- -VBS. (please refer to
DT97-3 for more details)
Thermistor Built-in IRAMS06UP60B
ITRIP (22)
FLT (21)
Driver IC
Thermistor (13)
NTC
V
SS (23)
Note 4: The Maximum recommended sense voltage at the ITRIP terminal under normal operating conditions is 3.3V.
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5
IRAMS06UP60B
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
Itrip
U,V,W
Figure1. Input/Output Timing Diagram
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output
voltage would be determined by the direction of current flow in the load.
V+
HIN1,2,3 LIN1,2,3
Itrip
U,V,W
0
0
0
1
0
1
1
X
1
0
1
X
V+
0
X
Ho
Lo
HIN1,2,3
X
(15,16,17)
U,V,W
(8,5,2)
IC
Driver
LIN1,2,3
(18,19,20)
6
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IRAMS06UP60B
HIN1,2,3
LIN1,2,3
1
2
3
4
5
6
IBUS_trip
IBUS
6µs
1µs
50%
U,V,W
tfltclr
Sequence of events:
1-2) Current begins to rise
2) Current reaches IBUS_Trip level
2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low
over-current. In case of high current (short circuit), the actual delay will be smaller.
3-4) Delay between driver identification of over-current condition and disabling of all outputs
4) Current starts decreasing, eventually reaching 0
5) Current goes below IBUS_trip, the driver starts its auto-reset sequence
6) Driver is automatically reset and normal operation can resume (over-current condition must be removed
by the time the drivers automatically resets itself)
Figure 2. ITrip Timing Waveform
Note 6: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output
voltage would be determined by the direction of current flow in the load.
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IRAMS06UP60B
Module Pin-Out Description
Pin
1
Name
VB3
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
none
W,VS3
NA
2
3
VB2
4
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
none
V,VS2
NA
5
6
VB1
7
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
none
U, VS1
8
9
NA
V+
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Positive Bus Input Voltage
NA
none
V-
Negative Bus Input Voltage
VTH
VCC
Temperature Feedback
+15V Main Supply
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
Logic Input High Side Gate Driver - Phase 1
Logic Input High Side Gate Driver - Phase 2
Logic Input High Side Gate Driver - Phase 3
Logic Input Low Side Gate Driver - Phase 1
Logic Input Low Side Gate Driver - Phase 2
Logic Input Low Side Gate Driver - Phase 3
Fault Output and Enable Pin
Current Sense and Itrip Pin
FLT/Enable
ITRIP
VSS
Negative Main Supply
8
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IRAMS06UP60B
Typical Application Connection IRAMS06UP60B
V+(10)
DC BUS
CAPACITORS
RS
V- (12)
Cb1
VB1 (7)
U, VS1 (8)
Cb2
3-ph AC
MOTOR
VB2 (4)
V, VS2 (5)
Cb3
VB3 (1)
W, VS3 (2)
22
21 20 19
18 17
23 VS1
24 HO1
25 VB1
1 VCC
LO1 16
LO2 15
LO3 14
VB2 HO2 VS2 VB3 HO3 VS3
Driver IC
PWM in
HIN1 (15)
HIN2 (16)
HIN3 (17)
2 HIN1
3 HIN2
4 HIN3
PWM in
PWM in
LIN2 LIN3
F
8
ITRIP EN RCIN VSS COM
10 11 12 13
PWM in
LIN1 (18)
LIN2 (19)
5 LIN1
6
7
9
CONTROLLER
PWM in
PWM in
LIN3 (20)
FAULT(21)
ITRIP (22)
FAULT indicator
Current Feedback
Temperature Monitor
THERMISTOR
VTH (13)
VDD (14)
15V
10m
0.1µ
VSS (23)
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and
EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor-
mance.
2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected be-
tween these terminals should be located very close to the module pins. Additional high frequency capacitors, typically
0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9.
4. Current sense signal can be obtained from pin 22 and pin 23
5. After approx. 9 ms the FAULT is reset
6.PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition
must be cleared before resuming operation
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9
IRAMS06UP60B
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tc= 100°C
Tc= 110°C
Tc= 120°C
0
2
4
6
8
10
12
14
16
18
20
Switching frequency (kHz)
Figure 3. Maximum sinusoidal phase current as function of switching frequency
V+ = 400V, Tj=150°C, Modulation Depth=0.8, PF=0.6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12 kHz
16 kHz
20 kHz
1
10
100
Modulation frequency (Hz)
Figure 4. Maximum sinusoidal phase current as function of modulation frequency
V+=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6
10
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IRAMS06UP60B
9
8
450
Current
Voltage
400
350
300
250
200
150
100
50
7
6
5
4
3
2
1
0
0
-1
-50
0.000
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
Time (µs)
Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, V+=400V
4.5
4
450
400
350
300
250
200
150
100
50
3.5
3
Current
Voltage
2.5
2
1.5
1
0.5
0
0
-0.5
-50
0.000
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
Time (µs)
Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, V+=400V
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11
IRAMS06UP60B
1000
Maximum
Nominal
Minimum
100
10
1
0
20
40
60
80
100
120
140
Temperature (°C)
Figure 7. Variation of thermistor resistance with temperature
180
170
160
150
140
130
120
110
100
90
Vbus=400V
Imot=3Arms
fsw=20kHz
80
60
70
80
90
100
110
120
Thermistor temperature (°C)
Figure 8. Estimated maximum IGBT junction temperature with thermistor tempera-
ture
12
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IRAMS06UP60B
20
17.5
15
15
12.5
10
7.5
5
6.8
4.7
3.3
2.5
0
2.2
1.5
1
0
5
10
15
20
Frequency (kHz)
Figure 9. Recommended minimum Bootstrap Capacitor value Vs Switching Frequency
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13
IRAMS06UP60B
Figure 11. Switching Parameter Definitions
VCE
IC
IC
VCE
90% IC
50%
90% IC
HIN/LIN
HIN/LIN
50%
HIN/LIN
HIN/LIN
10%
VCE
10% IC
10% IC
TON
TOFF
tf
tr
Figure 11b. Input to Output
propagation turn-off delay time
Figure 11a. Input to Output propagation
turn-on delay time
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery
14
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IRAMS06UP60B
V+
5V
Ho
Lo
HIN1,2,3
LIN1,2,3
IC
Driver
U,V,W
Figure CT1. Switching Loss Circuit
V+
IN
Ho
PWM=4µs
HIN1,2,3
1k
10k
IC
Driver
VCC
Io
U,V,W
Io
LIN1,2,3
5VZD
Lo
VP=Peak Voltage on the IGBT die
IN
Figure CT2. S.C.SOA Circuit
V+
Ho
HIN1,2,3
10k
IN
1k
VCC
IC
U,V,W
Io
Driver
Io
5VZD
LIN1,2,3
IN
Lo
VP=Peak Voltage on the IGBT die
Figure CT3. R.B.SOA Circuit
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15
IRAMS06UP60B
Package Outline
note 3
note 2
027-E2D24
IRAMS06UP60B
note 1
Standard pin leadforming option
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
For mounting instruction, see AN1049
16
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IRAMS06UP60B
Package Outline
note 3
note 2
027-E2D24
IRAMS06UP60B-2
note 1
Pin leadforming option -2
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
Data and Specifications are subject to change without notice
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TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
8/04
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