IRAM256-2067A [INFINEON]
Integrated Power Module for Appliance Motor Drive Applications; 集成功率模块\n家电电机驱动应用
| 型号： | IRAM256-2067A |
| 厂家： | 
Infineon |
| 描述： | Integrated Power Module for
Appliance Motor Drive Applications |
| 文件： | 总17页 (文件大小：1223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRAM256-2067A
Series
20A, 600V
Integrated Power Module for
Appliance Motor Drive Applications
Description
International Rectifier's IRAM256-2067A is a 20A, 600V Integrated Power Hybrid IC with Open Emitter pins for
advanced Appliance Motor Drives applications such as energy efficient Air Conditioner and Washing Machine.
IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to
simplify design.
This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark 3
phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A built-in
high precision temperature monitor and over-current protection feature, along with the short-circuit rated IGBTs
and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a
Single in line package with full transfer mold structure and CTI>600 minimizes PCB space and resolves isolation
problems to heatsink.
Features
•
•
•
•
•
•
•
•
•
•
•
Integrated gate drivers and bootstrap diodes
Temperature monitor
Protection shutdown pin
Low VCE (on) Trench IGBT technology
Undervoltage lockout for all channels
Matched propagation delay for all channels
3.3V Schmitt-triggered input logic
Cross-conduction prevention logic
Motor power range up to 1.5kW / 85~253 Vac
Isolation 2000VRMS min and CTI> 600
High operating case temperature, TCMAX=125°C
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
IRAM256-2067A
IRAM256-2067A2
SIP1A, option 1 LF
SIP1A, option 2 LF
10 tubes
10 tubes
80
80
IRAM256-2067A
IRAM256-2067A2
1
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IRAM256-2067A
Internal Electrical Schematic – IRAM256-2067A
2
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IRAM256-2067A
Absolute Maximum Ratings
Symbol
Description
Min
---
Max
600
450
20
Unit
VCES / VRRM
IGBT/ FW Diode Blocking Voltage
Positive Bus Input Voltage
V
V+
---
IO @ TC=25°C
RMS Phase Current (Note 1)
---
IO @ TC=100°C
RMS Phase Current (Note 1)
---
10
A
IPK
Maximum Peak Phase Current (Note 2)
Maximum PWM Carrier Frequency
Maximum Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
---
30
FP
---
20
kHz
W
PD
---
34
VISO
---
2000
150
125
125
1.0
VRMS
TJ (IGBT/Diode/IC)
Operating Junction Temperature
Operating Case Temperature Range
Storage Temperature Range
-40
-40
-40
0.8
---
TC
°C
TSTG
T
Mounting torque Range (M3 screw)
Bootstrap Diode Peak Forward Current
Bootstrap Resistor Peak Power (Single Pulse)
High side floating supply offset voltage
High side floating supply voltage
Nm
A
IBDF
1.0
PBR_Peak
VS1,2,3
VB1,2,3
VCC
---
15
W
V
VB1,2,3 - 20
-0.3
-0.3
-0.3
VB1,2,3 +0.3
600
20
V
Low Side and logic fixed supply voltage
Input voltage LIN, HIN, ITRIP, FLT/EN
V
VIN
7
V
Note 1: See Figure 4 and IR IPM Design Tool.
Note 2: tP<100ms.
Inverter Section Electrical Characteristics
VBIAS(VCC, VBS1,2,3)=15V, TJ=25°C unless otherwise specified.
Symbol
Description
Min
Typ
Max
Unit
Conditions
Collector-to-Emitter Breakdown
Voltage
V(BE)CES
600
---
---
V
VIN=0V, IC=250μA
Temperature Coeff. Of
Breakdown Voltage
VIN=0V, IC=250A
(25°C - 150°C)
ΔV(BR)CES / ΔT
---
0.3
---
V/°C
V
---
---
---
---
---
---
---
---
---
---
---
---
---
1.5
1.7
8
1.75
---
IC=7.5A
Collector-to-Emitter Saturation
Voltage
VCE(ON)
IC=7.5A, TJ=150°C
VIN=0V, V+=600V
VIN=0V, V+=600V, TJ=150°C
80
---
Zero Gate Voltage Collector
Current
ICES
μA
V
100
1.8
1.4
1.65
1.3
22
2.6
---
IF=7.5A
VFM
Diode Forward Voltage Drop
IF=7.5A, TJ=150°C
IF=1A
1.8
---
Bootstrap Diode Forward
Voltage Drop
VBDFM
V
IF=1A, TJ=150°C
RBR
Bootstrap Resistor Value
Bootstrap Resistor Tolerance
VCC / VBS Capacitor Value
ITRIP Capacitor Value
---
Ω
ΔRBR/RBR
C1,2,3,4
C6
---
±5
---
%
47
nF
nF
nF
1
---
C7
NTC Capacitor Value
2.2
---
3
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IRAM256-2067A
Inverter Section Switching Characteristics
VBIAS(VCC, VBS1,2,3)=15V, TJ=25°C unless otherwise specified.
Symbol
EON
Description
Min
---
Typ
260
135
395
Max
---
Unit
µJ
Conditions
IC=7.5A, V+=400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
EOFF
---
---
ETOT
---
---
Diode Reverse Recovery
energy
EREC
---
25
---
See CT1
TRR
Diode Reverse Recovery time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
---
---
---
---
100
380
190
570
---
---
---
---
ns
IC=7.5A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
EON
EOFF
ETOT
µJ
Diode Reverse Recovery
energy
EREC
---
75
---
See CT1
TRR
QG
Diode Reverse Recovery time
Turn-On IGBT Gate Charge
---
---
150
25
---
---
ns
nC
IC=12A, V+=400V, VGE=15V
TJ=150°C, IC=7.5A, VP=600V
V+= 450V,
Reverse Bias Safe Operating
Area
RBSOA
SCSOA
FULL SQUARE
---
VCC=+15V to 0V
See CT3
Short Circuit Safe Operating
Area
Short Circuit Safe Operating
Area
TJ=25°C, V+= 400V, VGE=+15V
to 0V
5
---
µs
TJ=100°C, V+= 400V,
VGE=+15V to 0V
SCSOA
ICSC
3
---
---
---
---
µs
A
Short Circuit Collector Current
16.5
TJ=150°C, VCE= 50V, VGE=11V
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at 15V
differential (Note 3)
Symbol
VB1,2,3
VS1,2,3
VCC
Description
Min
TYP
Max
Unit
V
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
Input voltage LIN, HIN, ITRIP, FLT/EN
High side PWM pulse width
VS+12.5 VS+15 VS+17.5
Note 4
13.5
VSS
1
---
15
---
---
---
450
16.5
VSS+5
---
V
V
VIN
V
HIN
µs
µs
Deadtime
External dead time between HIN and LIN
1
---
Note 3: For more details, see IR21364 data sheet.
Note 4: Logic operational for VS from COM-5V to COM+600V. Logic state held for VS from COM-5V to COM-VBS
(please refer to DT97-3 for more details)
.
4
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IRAM256-2067A
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Symbol
VIN,TH+
VIN,TH-
Description
Min
2.5
---
TYP
---
Max
---
Unit
V
Positive going input threshold for LIN, HIN, FLT/EN
Negative going input threshold for LIN, HIN, FLT/EN
VCC/VBS supply undervoltage, Positive going threshold
VCC/VBS supply undervoltage, Negative going threshold
VCC and VBS supply undervoltage lock-out hysteresis
Quiescent VBS supply current
---
0.8
11.6
11.4
---
V
VCCUV+, VBSUV+
VCCUV-, VBSUV-
VCCUVH, VBSUVH
IQBS
10.6
10.4
---
11.1
10.9
0.2
---
V
V
V
---
150
3.2
50
µA
mA
µA
µA
µA
µA
µA
V
IQCC
Quiescent VCC supply current
---
---
ILK
Offset Supply Leakage Current
---
---
IIN+
Input bias current VIN=3.3V for LIN, HIN, FLT/EN
Input bias current VIN=0V for LIN, HIN, FLT/EN
ITRIP bias current VITRIP=3.3V
---
100
---
195
---
IIN-
-1
ITRIP+
---
3.3
---
6
ITRIP-
ITRIP bias current VITRIP=0V
-1
---
VITRIP
ITRIP threshold Voltage
0.44
---
0.49
0.07
50
0.54
---
VITRIP_HYS
RFLT
ITRIP Input Hysteresis
V
Fault low on resistance
---
100
Ω
Dynamic Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. Dynamic parameters are guaranteed by design. (Note 3)
Symbol
Description
Min
Typ
Max
Unit
Conditions
Input to Output propagation
turn-on delay time (see Fig.12)
TON
---
---
1.15
µs
IC=7.5A, V+=300V
Input to Output propagation
turn-off delay time (see Fig.12)
TOFF
---
---
1.15
µs
TFILIN
Input filter time (HIN,LIN)
Input filter time (FLT/EN)
---
310
200
---
---
ns
ns
VIN=0 or VIN=5V
VEN=0 or VEN=5V
TFILEN
100
EN low to six switch turn-off
propagation delay (see fig. 3)
TEN
---
---
1.35
µs
VIN=0 or VIN=5V, VEN=0
VIN=0 or VIN=5V, VITRIP=5V
VIN=0 or VIN=5V, VITRIP=5V
TFLT
ITRIP to Fault propagation delay
ITRIP Blanking Time
400
100
600
150
800
---
ns
ns
TBLT-TRIP
IC=7.5A, V+=300V
ITRIP to six switch turn-off
propagation delay (see fig. 2)
Internal Dead Time injected by
driver
Matching Propagation Delay
Time (On & Off) all channels
TITRIP
DT
---
220
---
---
290
40
1.5
360
75
µs
ns
ns
VIN=0 or VIN=5V
MT
External dead time> 400ns
1.1
1
1.7
1.5
2.3
1.9
TC = 25°C
Post ITRIP to six switch turn-off
clear time (see fig. 2)
TFLT-CLR
ms
TC = 100°C
5
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IRAM256-2067A
Thermal and Mechanical Characteristics
Symbol
RTH(J-C)
RTH(J-C)
RTH(C-S)
CTI
Description
Min
Typ
3.0
4.1
0.1
---
Max
3.6
5.1
---
Unit
Conditions
Inverter Operating Condition
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK (Note 5)
Thermal resistance, per IGBT
Thermal resistance, per Diode
Thermal resistance, C-S
Comparative Tracking Index
Curvature of module backside
---
---
°C/W
---
600
0
---
V
BKCurve
---
---
µm
Convex only
Note 5: Flatness of the heatsink should be between -50µm to 100µm.
Internal NTC - Thermistor Characteristics
Symbol
Description
Min
44.65
1.27
3989
-40
Typ
47
Max
49.35
1.56
4111
125
Unit
kΩ
kΩ
k
Conditions
TC = 25°C
R25
Resistance
R125
B
Resistance
1.41
4050
---
TC = 125°C
R2 = R1e[B(1/T2 - 1/T1)]
B-constant (25-50°C)
Temperature Range
°C
Typ. Dissipation constant
---
1
---
mW/°C TC = 25°C
Input-Output Logic Level Table
V+
FLT/EN
ITRIP
0
HIN1,2,3
LIN1,2,3
U,V,W
V+
1
1
1
1
1
0
1
0
0
1
X
X
0
1
0
1
X
X
Ho
0
0
HIN1,2,3
0
Off
Off
Off
Off
(20,22,23)
U,V,W
(10,6,2)
IC
Driver
0
LIN1,2,3
1
Lo
X
(24,25,26)
Qualification Information†
Industrial††
(per JEDEC JESD 47E)
Qualification Level
Class C
Machine Model
ESD
(per JEDEC standard JESD22-A115-A)
Class 1C
(per JEDEC standard JESD22-A114-D)
Human Body Model
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
†† Higher qualification ratings may be available should the user have such requirements. Please contact your International
Rectifier sales representative for further information.
6
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IRAM256-2067A
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
TFLT
50%
FLT
U,V,W
50%
50%
TITRIP
TFLT-CLR
Figure 2. ITRIP Timing Waveform
50%
EN
TEN
U,V,W
50%
Figure 3. Output Enable Timing Diagram
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge
output voltage would be determined by the direction of current flow in the load.
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IRAM256-2067A
Module Pin-Out Description
Pin
1
Name
Description
VB3
High Side Floating Supply Voltage 3
2
W,VS3
Output 3 - High Side Floating Supply Offset Voltage
3
N/A
None
4
5
VB2
High Side Floating Supply Voltage 2
6
V,VS2
Output 2 - High Side Floating Supply Offset Voltage
7
N/A
None
8
9
VB1
High Side Floating Supply Voltage 1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
U,VS1
Output 1 - High Side Floating Supply Offset Voltage
N/A
V+
None
Positive Bus Input Voltage
None
N/A
ITRIP
VRU
FLT/EN
VRV
Current Protection Pin
Low Side Emitter Connection - Phase 1
Fault Output and Enable Pin
Low Side Emitter Connection - Phase 2
Logic Input High Side Gate Driver - Phase 1
Low Side Emitter Connection - Phase 3
Logic Input High Side Gate Driver - Phase 2
Logic Input High Side Gate Driver - Phase 3
Logic Input Low Side Gate Driver - Phase 1
Logic Input Low Side Gate Driver - Phase 2
Logic Input Low Side Gate Driver - Phase 3
Temperature Feedback
HIN1
VRW
HIN2
HIN3
LIN1
LIN2
LIN3
VTH
VCC
VSS
+15V Main Supply
Negative Main Supply
8
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IRAM256-2067A
Typical Application Connection IRAM256-2067A
VB3 (1)
W, VS3 (2)
W
BOOT-STRAP
CAPACITORS
VB2 (5)
3-Phase AC
MOTOR
V, VS2 (6)
V
U
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
VB1 (9)
U, VS1 (10)
V+
V+ (13)
DC BUS
CAPACITORS
ITRIP (16)
VRU (17)
PHASE LEG
CURRENT
SENSE
FLT/EN (18)
VRV (19)
HIN1 (20)
VRW (21)
HIN2 (22)
HIN3 (23)
LIN1 (24)
LIN2 (25)
CONTROLLER
LIN3 (26)
VTH (27)
VDD (28)
VSS (29)
15 V
5 V
Enable
100nF
0.1m
10m
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will
further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown
connected between these terminals should be located very close to the module pins. Additional high frequency
capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be
selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table
on page 3).
4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
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IRAM256-2067A
16
14
12
10
8
V+=320V
V+=400V
6
TC = 90ºC
TC = 100ºC
TC = 125ºC
4
2
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 4. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
11
10
9
8
7
6
FPWM = 6kHz
FPWM = 16kHz
FPWM = 20kHz
5
4
3
2
1
0
V+=320V
V+=400V
1
10
Modulation Frequency - Hz
100
Figure 5. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
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IRAM256-2067A
200
180
160
140
120
100
80
60
IOUT = 12A
IOUT = 10A
IOUT = 8A
40
20
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 6. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
160
140
120
100
80
60
FPWM = 20kHz
FPWM = 16kHz
40
FPWM = 6kHz
20
0
0
1
2
3
4
5
6
7
8
9
10
Output Phase Current - ARMS
Figure 7. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
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IRAM256-2067A
160
140
120
100
80
FPWM = 20kHz
FPWM = 16kHz
FPWM = 6kHz
60
40
0
1
2
3
4
5
6
7
8
9
10
Output Phase Current - ARMS
Figure 8. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
160
TJ avg = 1.26 x TTherm + 27
150
140
130
120
110
100
97
100
90
65
70
75
80
85
90
95
105
110
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 9. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=7.5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
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IRAM256-2067A
Figure 10. Thermistor Readout vs. Temperature (4.7kohm REXT pull-down resistor) and Normal Thermistor
Resistance values vs. Temperature Table.
Figure 11. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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IRAM256-2067A
Figure 12. Switching Parameter Definitions
V
IC
CE
IC
V
CE
H /L
90%I
IN IN
C
50%
H /L
90%IC
50%
IN IN
50%
V
H /L
CE
IN IN
H /L
IN IN
50%
V
CE
10%IC
10%IC
tr
t
f
TON
TOFF
Figure 12a. Input to Output propagation turn-
on delay time.
Figure 12b. Input to Output propagation turn-
off delay time.
IF
VCE
HIN/LIN
Irr
trr
Figure 12c. Diode Reverse Recovery.
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IRAM256-2067A
V+
Ho
Lo
I
N
Hin1,2,3
Lin1,2,3
IC
Driver
U,V,W
I
O
Figure CT1. Switching Loss Circuit
V+
Ho
I
N
Hin1,2,3
IC
Driver
U,V,W
Io
Lin1,2,3
I
O
Lo
Figure CT2. S.C.SOA Circuit
V+
Ho
I
N
Hin1,2,3
IC
Driver
U,V,W
I
O
Lin1,2,3
Lo
Io
Figure CT3. R.B.SOA Circuit
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IRAM256-2067A
Package Outline IRAM256-2067A
Missing pins: 3,4,7,8,11,12,14,15
Dimensions in mm
For mounting instruction see AN-1049
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IRAM256-2067A
Package Outline IRAM256-2067A2
Missing pins: 3,4,7,8,11,12,14,15
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
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