IRAM136-0461G [INFINEON]
iMOTION⑩ Series 4A, 600V Plug N DriveTM Integrated Power Module for Energy Efficient Motor Drives; iMOTION⑩系列4A ， 600V插销N传动系统的集成电源模块高能效电机驱动器
| 型号： | IRAM136-0461G |
| 厂家： | 
Infineon |
| 描述： | iMOTION⑩ Series 4A, 600V Plug N DriveTM Integrated Power Module for Energy Efficient Motor Drives |
| 文件： | 总20页 (文件大小：366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97271 RevA
IRAM136-0461G
Series
4A, 600V
Plug N DriveTM Integrated Power
Module for Energy Efficient Motor Drives
Description
International Rectifier’s IRAM136-0461G is an Integrated Power Module developed and optimized for elec-
tronic motor control in energy saving applications. Targeting the sub 300W three-phase motor drive
applications, such as fan or refrigerator compressor drives, this module offers the highest level of integra-
tion available in the market today. It features an input diode rectification bridge and a three-phase inverter,
complete with bootstrap diodes, high voltage gate driver IC, current shunt resistor and temperature
sensor. This high performance AC motor-driver is housed in a compact single-in-line isolated package for a
very simple design.
The internal shunt offers easy current feedback for precise control and safe operation. A built-in tem-
perature monitor and logic level shut-down function, along with the short-circuit rated IGBTs and
integrated under-voltage lockout function, deliver high level of protection and fail-safe operation.
Features
• Internal Rectifier Diode Bridge
• Internal Shunt Resistor
• Integrated Gate Drivers and Bootstrap Diodes
• Temperature Monitor
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• Schmitt-triggered input logic
• Cross-conduction prevention logic
1
• Lower di/dt gate driver for better noise immunity
• Motor Power range 0.1~0.3kW / up to 253V, 50/60Hz
• Isolation 2000VRMS /1min
23
Absolute Maximum Ratings
Parameter
VRRM
Description
Max. Value
Units
Input Bridge Blocking Voltage
IGBT Blocking Voltage
600
VCES
V
600
V+
Positive Bus Input Voltage
RMS Phase Current (FPWM=20kHz)
RMS Phase Current (FPWM=20kHz)
450
IO @ TC=25°C
3.6
IO @ TC=100°C
2
IO PK
Pulsed RMS Phase Current (tp<100ms, FPWM=20kHz)
PWM Carrier Frequency
5
20
FPWM
kHz
W
Pd
Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
16
VISO
VRMS
2000
TJ (IGBT & Diodes)
Operating Junction temperature Range
Operating Junction temperature Range
Mounting torque (M3 screw)
-40 to +150
-40 to +150
1.0
°C
TJ (Driver IC)
T
Nm
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1
IRAM136-0461G
InternalElectricalSchematic-IRAM136-0461G
AC (1)
D10
D11
Q1
Q3
Q2
D1
D2
D3
D12
D13
AC (2)
Q5
Q6
Q4
Vbus_1 (3)
D4
D5
D6
Vbus_2 (4)
GND_1 (5)
R10
R1
R2
R3
D14
D15
D16
VB1 (11)
R4
R5
R6
U, VS1 (12)
VB2 (9)
D17
D18
D19
V, VS2 (10)
VB3 (7)
W, VS3 (8)
D7 D8
D9
22
21 20 19
18 17
VB2 HO2 VS2 VB3 HO3 VS3
23 VS1
24 HO1
25 VB1
1 VCC
LO1 16
R9
LO2 15
LO3 14
Driver IC
2 HIN1
3 HIN2
4 HIN3
HIN1 (15)
HIN2 (16)
HIN3 (17)
LIN2 LIN3
6
F
8
ITRIP EN RCIN VSS COM
10
5 LIN1
7
9
11
12 13
LIN1 (18)
LIN2 (19)
R8
LIN3 (20)
ITRIP(21)
Shunt+ (22)
THERMISTOR
R7
VTH (13)
VCC (14)
C5
VSS (23)
2
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IRAM136-0461G
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Max
Units
IDC
@TC=100°C, 180° cond. square wave
@TC=100°C, 180° cond. sine wave
Input Bridge DC Output Current
9.4
A
IF(AV)
Average Output Forward Current
8.7
A
8.3ms Sine Pulse rated VRRM applied
10ms Sine Pulse 80% rated VRRM applied
10ms Sine Pulse 80% rated VRRM applied
t=0.1 to 10 ms, no Voltage applied
100
95
A
A
Peak One Cycle Non-Repetitive
Surge Current @ TJ =150°C
IFSM
I2t
I2t for fusing
A2s
A2s0.5
45.12
638
I2t0.5
I2t0.5 for fusing
Absolute Maximum Ratings Driver Function
Absolute Maximum Ratings indicate substained limits beyond which damage to the device may occur.
All voltage parameters are absolute voltages referenced to COM/VSS.
Symbol
Parameter
Min
Max
Units Conditions
tP= 10ms,
A
Bootstrap Diode Peak Forward
Current
IBDF
---
4.5
TJ = 150°C, TC=100°C
Bootstrap Resistor Peak Power
(Single Pulse)
PBR Peak
tP=100µs, TC =100°C
---
25.0
W
VS1,2,3
VB1,2,3
VB1,2,3 - 25 VB1,2,3 +0.3
High Side floating supply voltage
High Side floating supply voltage
V
V
-0.3
-0.3
600
20
Low Side and logic fixed supply
voltage
VCC
V
V
Lower of
(VSS+15V)
or VCC+0.3V
VIN
Input voltage LIN, HIN, ITrip
-0.3
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3
IRAM136-0461G
Input Bridge Section Electrical Characteristics @TJ= 25°C
Symbol
Parameter
Min
---
---
---
---
---
---
Typ
1
Max
1.2
Units
Conditions
@ IFM = 4A, TJ=25°C
V
V
VFM
Forward Voltage Drop
@ IFM = 4A, TJ=150°C
TJ=150°C
0.9
22
1.05
59
rt
Forward Slope resistance
Threshold Voltage
mƻ
V
VF(TD)
0.81
2
0.84
15
TJ=25°C, VR= rated VRR
TJ=150°C, VR= rated VRR
IRM
Reverese Leakage Current
µA
115
190
Inverter Section Electrical Characteristics @TJ= 25°C
Symbol
Parameter
Min
Typ
Max
Units Conditions
Collector-to-Emitter Breakdown
Voltage
V(BR)CES
VIN=5V, IC=250µA
600
---
---
V
VIN=5V, IC=1.0mA
(25°C - 150°C)
Temperature Coeff. Of Breakdown
Voltage
ƩV(BR)CES / ƩT
---
0.74
---
V/°C
IC=2A, VCC=15V
IC=2A, VCC=15V, TJ=150°C
VIN=5V, V+=600V
VIN=5V, V+=600V, TJ=150°C
IC=2A
---
---
---
---
---
---
--
1.95
2.40
1
2.20
2.80
75
Collector-to-Emitter Saturation
Voltage
VCE(ON)
V
µA
V
Zero Gate Voltage Collector
Current
ICES
160
1.25
1.20
--
---
1.65
1.60
1.25
1.10
---
VFM
Diode Forward Voltage Drop
IC=2A, TJ=150°C
IF=1A
Bootstrap Diode Forward Voltage
Drop
VBDFM
V
IF=1A, TJ=125°C
---
---
---
---
RBR
Bootstrap Resistor Value
22
ƻ
ƩRBR/RBR
Bootstrap Resistor Tolerance
---
5
%
4
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IRAM136-0461G
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol
EON
Parameter
Min
---
---
---
---
---
---
---
---
---
---
---
Typ
180
65
Max
260
140
400
15
Units Conditions
IC=2A, V+=400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
EOFF
ETOT
EREC
tRR
VCC=15V, L=1mH
µJ
ns
µJ
Energy losses include "tail" and
diode reverse recovery
245
5
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-on Swtiching Loss
Turn-off Switching Loss
Total Switching Loss
See CT1
240
210
80
---
IC=2A, V+=400V
EON
305
150
455
35
EOFF
ETOT
EREC
tRR
VCC=15V, L=1mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
290
15
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-On IGBT Gate Charge
See CT1
285
0.84
---
ns
1.3
nC
IC=2A, V+=400V, VGE=15V
QG
TJ=150°C, IC=2A, VP=600V
V+= 450V
FULL SQUARE
RBSOA
SCSOA
ICSC
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Short Circuit Collector Current
V
CC=+15V to 0V
See CT3
TJ=150°C, VP=600V,
V+= 360V,
10
---
---
11
---
---
µs
A
V
CC=+15V to 0V
See CT2
TJ=150°C, VP=600V, tSC<10µs
V+= 360V, VGE=15V
V
CC=+15V to 0V
See CT2
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5
IRAM136-0461G
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within
the recommended conditions. All voltages are absolute referenced to COM/VSS. The offset is tested with all supplies
biased at 15V differential (Note 2)
Symbol
AC
Definition
Min
---
Max
253
Units
V
AC input voltage
AC
AC input frequency
50
60
Hz
VB1,2,3
VS1,2,3
VCC
VS+12
Note 3
12
VS+20
450
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
ITRIP input voltage
V
20
V
V
VITRIP
VIN
VSS
VSS+5
VSS+5
VSS
Logic input voltage LIN, HIN
Note 2: For more details, see IR21365 data sheet
Note 3: Logic operational for VS from GND -5V to GND +600V. Logic state held for VS from GND -5V to GND -VBS
(please refer to DT97-3 for more details)
.
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS/COM and are
applicable to all six channels. (Note 2)
Symbol
VIH
Definition
Min
3.0
---
Typ
---
Max
---
Units
Logic "0" input voltage
Logic "1" input voltage
V
V
VIL
---
0.8
VCCUV+
VBSUV+
VCC and VBS supply undervoltage
Positive going threshold
10.6
10.4
---
11.1
10.9
0.2
11.6
11.4
---
V
V
V
VCCUV-
VBSUV-
VCC and VBS supply undervoltage
Negative going threshold
VCCUVH
VBSUVH
VCC and VBS supply undervoltage
lock-out hysteresis
VIN,Clamp
IQBS
Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10µA
Quiescent VBS supply current VIN=0V
Quiescent VCC supply current VIN=0V
Offset Supply Leakage Current
Input bias current VIN=5V
4.9
---
---
---
---
---
---
---
5.2
---
5.5
165
3.35
60
V
µA
mA
µA
µA
µA
µA
µA
IQCC
---
ILK
---
I
I
IN+, IEN+
IN-, IEN-
200
100
30
300
220
100
1
Input bias current VIN=0V
ITRIP+
ITRIP-
ITRIP bias current VITRIP=5V
ITRIP bias current VITRIP=0V
0
6
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IRAM136-0461G
Static Electrical Characteristics Driver Function (Continued)
Symbol
Definition
Min
3.85
---
Typ
4.3
150
70
Max
4.75
---
Units
V
V(ITRIP
)
ITRIP threshold Voltage
ITRIP Input Hysteresis
Falut Output ON Resistance
V(ITRIP,HYS)
RON,FLT
mV
---
100
Ohm
Dynamic Electrical Characteristics
Driver only timing unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Units Conditions
Input to Output propagation turn-
on delay time (see fig.11)
TON
---
700
---
ns
VCC=VBS= 15V, IC=2A, V+=400V
Input to Output propagation turn-
off delay time (see fig. 11)
TOFF
---
515
---
---
ns
TFLIN
TBLT-Trip
DT
VIN=0 & VIN=5V
VIN=0 & VIN=5V
VBS=VCC=15V
Input Filter time (HIN, LIN)
ITRIP Blancking Time
100
100
220
200
150
290
ns
ns
ns
Dead Time (VBS=VCC=15V)
360
75
VCC= VBS= 15V, external dead
time> 400ns
Matching Propagation Delay Time
(On & Off)
MT
---
---
40
---
ns
µs
ITrip to six switch to turn-off
propagation delay (see fig. 2)
VCC=VBS= 15V, IC=10A, V+=300V
TITrip
1.75
TC = 25°C
---
---
7.7
6.7
---
---
Post ITrip to six switch to turn-off
clear time (see fig. 2)
TFLT-CLR
ms
TC = 100°C
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7
IRAM136-0461G
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
Max
Units Conditions
Junction to case thermal
resistance (IGBT).
Rth(J-C) IGBT
---
6.6
7.6
Junction to case thermal
resistance (FW Diode).
Flat, greased surface. Heatsink
Rth(J-C) FW Diode
8.8
6.0
---
---
10.8
7.5
°C/W compound thermal conductivity
1W/mK
Junction to case thermal
resistance (Input Diode).
Rth(J-C) Input Diode
Rth(C-S)
T
0.1
0.6
---
Case to Sink thermal resistance
Mounting Tourque
---
1.0
Nm Mounting Tourque
0.5
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min
336.6
0
Typ
Max
Units Conditions
RShunt
340.0
343.4
TC = 25°C
Resistance
mƻ
TCoeff
Temperature Coefficient
Power Dissipation
Temperature Range
---
---
---
200 ppm/°C
PShunt
1.5
-40°C< TC <100°C
---
W
TRange
125
-40
°C
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
20.9
2.25
3832
-40
Typ
Max
23.1
2.5
Units Conditions
R25
R125
B
TC = 25°C
Resistance
22
kƻ
TC = 125°C
Resistance
2.52
3950
kƻ
B-constant (25-50°C)
4335
125
k
R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range
°C
TC = 25°C
Typ. Dissipation constant
1
mW/°C
Thermistor Pin Connection
+5V
Driver IC
VTH (13)
VSS (23)
NTC
8
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IRAM136-0461G
Module Pin-Out Description
Pin
1
Name
AC
Description
AC Input
2
AC
AC Input
3
Vbus_1
Vbus_2
GND
na
Input Bridge Positive Output
Positive Bus Input Voltage
Negative Bus Input Voltage
none
4
5
6
7
VB3
High Side Floating Supply voltage 3
8
W,VS3
VB2
Output 3 - High Side Floating Supply Offset Voltage 3
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage 2
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage 1
Temperature Feedback
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
V,VS2
VB1
U,VS1
VTH
VCC
+15V Main Supply
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
ITRIP
Logic Input High Side Gate Driver - Phase 1
Logic Input High Side Gate Driver - Phase 2
Logic Input High Side Gate Driver - Phase 3
Logic Input Low Side Gate Driver - Phase 1
Logic Input Low Side Gate Driver - Phase 2
Logic Input Low Side Gate Driver - Phase 3
Current Sense and Itrip Pin
Shunt+
VSS
Positive Current Sense
Logic Ground
1
23
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9
IRAM136-0461G
HIN1,2,3
LIN1,2,3
HO1,2,3
LO1,2,3
Itrip
U,V,W
Figure1. Input/Output Timing Diagram
Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output
voltage would be determined by the direction of current flow in the load.
Input-Output Logic Level Table
V+
HIN1,2,3 LIN1,2,3
Ho
Lo
ITRIP
U,V,W
Hin1,2,3
V+
0
0
0
0
1
0
1
1
X
1
0
1
X
(15,16,17)
U,V,W
IC
Driver
(8,10,12)
X
Lin1,2,3
X
(18,19,20)
10
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IRAM136-0461G
Typical Application Connection IRAM136-0461G
AC
AC
AC
INPUT
Vbus_1
Vbus_2
In-Rush Control
DC BUS
CAPACITORS
GND
BOOT-STRAP
CAPACITORS
VB3
W,VS3
VB2
V,VS2
3-Phase AC
MOTOR
VB1
U,VS1
VTH
VCC
+5V
Temperature Monitor
HIN1
HIN2
HIN3
PWM in
PWM in
LIN1
LIN2
PWM in
CONTROLLER
PWM in
LIN3
ITRIP
PWM in
PWM in
Shunt+
Itrip (Logc Level)
Current Sense
VSS
15V
0.1µ
10m
1. Electrolytic bus capacitors should be mounted as close as possible to the module bus terminals to reduce ringing and
EMI problems. Additional high frequency ceramic capacitors mounted close to the module pins will improve perfor-
mance.
2. In order to provide good decoupling between VCC-VSS and VB-VS terminals, the capacitors connected between these
terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1∝F, are
strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on
IR design tip DN 98-2a, application note AN-1044 or Figure 9.
4. Current sense signal can be obtained from pin 22 and pin 23
5. After approx. 9 ms the FAULT is reset
6. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, and the overcurrent
condition must be cleared before resuming operation
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11
IRAM136-0461G
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TC = 80ºC
TC = 90ºC
TC = 100ºC
TJ = 150ºC
Sinusoidal Modulation
0
2
4
6
8
10
12
14
16
18
20
PWM Frequency - kHz
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T = 150°C
J
Sinusoidal Modulation
F
F
F
= 20kHz
= 16kHz
= 10kHz
PWM
PWM
PWM
0
10
20
30
40
50
60
70
80
90
100
Modulation Frequency - Hz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
VBUS=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6
12
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IRAM136-0461G
35
30
25
20
15
10
5
T = 150°C
J
Sinusoidal Modulation
I
I
I
= 1.0 A
= 1.5 A
= 2.0 A
OUT
OUT
OUT
RMS
RMS
RMS
0
0
2
4
6
8
10
12
14
16
18
20
PWM Switching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation
VBUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
80
70
T = 150°C
J
60
50
40
30
20
10
0
Sinusoidal Modulation
F
F
F
= 10 kHz
= 16 kHz
= 20 kHz
PWM
PWM
PWM
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Output Phase Current - A
RMS
Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation
BUS=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6
V
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13
IRAM136-0461G
160
150
140
130
120
110
100
90
F
F
F
= 10 kHz
= 16 kHz
= 20 kHz
PWM
PWM
PWM
80
70
60
50
40
T = 150°C
J
30
Sinusoidal Modulation
20
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Output Phase Current - A
RMS
Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase
160
T avg. = 1.0775 x T
+ 9.6086
Therm
J
150
140
130
120
110
100
75
80
85
90
95 100 105 110 115 120 125 130 135 140 145 150
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
BUS=400V, IPHASE=1.3ARMS, FPWM=16kHz
V
14
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IRAM136-0461G
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
+5V
REXT
TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM
VTherm
°C
-40
-35
-30
-25
-20
-15
-10
-5
kƻ
°C
25
30
35
40
45
50
55
60
65
70
75
80
85
kƻ
°C
kƻ
RTherm
759.605
545.196
396.070
291.025
216.008
161.977
122.638
93.702
72.191
56.093
43.907
34.633
27.509
22.000
17.709
14.344
11.688
9.578
7.894
6.540
5.446
4.559
3.832
3.239
2.748
2.342
90
2.004
1.722
1.486
1.287
1.119
0.975
0.854
0.750
95
100
105
110
115
120
125
Min
Avg.
Max
0
5
10
15
20
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor Temperature - °C
Figure 9. Thermistor Readout vs. Temperature (2kohm pull-up resistor, 5V) and
Nominal Thermistor Resistance values vs. Temperature Table.
12.0
11.0
V+
DBS
CBS
10µF
RBS
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
vB
RG1
+15V
HIN
VCC
HO
HIN
LIN
U,V,W
GND
VS
LO
RG2
LIN
6.8µF
VSS
COM
VSS
4.7µF
3.3µF
2.2µF
1.5µF
0
5
10
15
20
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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15
IRAM136-0461G
4.0
t = 400µs
3.5
P
Square Wave
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T = 25°C
J
T = 150°C
J
0
5
10
15
20
25
30
35
40
45
50
Instantaneous Forward Current - A
Figure 11. Maximum Forward voltage Drop (Input Bridge Rectifier)
30
20
10
0
T = 150°C
J
180° Sine Conduction
180° Rect Conduction
0
1
2
3
4
5
6
7
8
9
10
Bridge Output Current - A
AVG
Figure 12. Maximum Power Loss vs. Output Current (Input Bridge Rectifier)
16
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IRAM136-0461G
150
140
130
120
110
100
90
180° Sine Conduction
180° Rect Conduction
80
0
1
2
3
4
5
6
7
8
9
10
Bridge Output Current - A
AVG
Figure 13. Maximum Allowable Case Temperature vs. Output Current (Input Bridge Rectifier)
110
At Any rated Load Condition
80% VRRM Applied After Surge
100
90
80
70
60
50
40
30
20
Initial TJ = 150°C
@60Hz 0.0083s
@50Hz 0.0100s
1
10
100
Half Cycle Current Pulse - n
Figure 14. Input Bridge Maximum Non-Repetitive Surge Current
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17
IRAM136-0461G
Figure 11. Switching Parameter Definitions
V
IC
CE
IC
V
CE
90% I
C
50%
IN/LIN
90% IC
H
H /L
IN IN
50%
V
50%
IN/LIN
H
CE
H /L
IN IN
50%
V
CE
10% IC
10% IC
tr
tf
TON
TOFF
Figure 11b. Input to Output
propagation turn-off delay time.
Figure 11a. Input to Output propaga-
tion turn-on delay time.
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery.
18
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IRAM136-0461G
V+
5V
Ho
IN
IO
Hin1,2,3
Lin1,2,3
IC
Driver
U,V,W
Lo
Figure CT1. Switching Loss Circuit
V+
Ho
Hin1,2,3
IN
IO
1k
10k
IC
Driver
V
CC
U,V,W
Lin1,2,3
5VZD
Lo
IN
Io
Figure CT2. S.C.SOA Circuit
V+
Ho
Hin1,2,3
IN
IO
1k
10k
V
IC
Driver
CC
U,V,W
5VZD
Lo
Lin1,2,3
IN
Io
Figure CT3. R.B.SOA Circuit
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19
IRAM136-0461G
PackageOutline
note 3
note 2
62
56
A
3
B
027-E2D24
IRAM136-0461G
23
1
note 1
2 TYP.
0.80
Ø0.20 A B
TYP
0.70
0.45
0.55
TYP
SCALE:4/1
22 PITCHES = 44
46.2
C
50
R0.6 TYP.
CONVEX ONLY
5.0
3.2
0.10
C
Notes:
Dimensions in mm
1- Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking
For mounting instruction, see AN1049
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
2006/12
20
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