IRAM136-1060B [INFINEON]
Integrated Power Hybrid IC for Appliance Motor Drive Applications; 集成功率混合IC，适用于家电电机驱动应用
| 型号： | IRAM136-1060B |
| 厂家： | 
Infineon |
| 描述： | Integrated Power Hybrid IC for Appliance Motor Drive Applications |
| 文件： | 总18页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97280 RevA
IRAM136-1060B
Series
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
10A, 600V
with Internal Shunt Resistor
Description
International Rectifier's IRAM136-1060B is a 10A, 600V Integrated Power Hybrid IC designed for advanced
Appliance Motor Drives applications. Typical applications include energy efficient Washing Machine, Fans,
Air Conditions and Refrigerator Compressor Drivers. This module offers an extremely compact, high
performance AC motor-driver in an isolated package that simplifies design. Several built-in protection
features such as over current, temperature monitoring, shoot through prevention and under voltage lockout
makes this a very robust solution. The combination of highly efficient Trench IGBT technology and the
industry benchmark 3-phase HVIC driver (3.3V/5V input compatible) and a fully isolated thermally enhanced
package makes this a highly competitive solution. The compact Single in line (SIP05) package minimizes
PCB space.
Features
ꢀ Internal Shunt Resistor and current feedback
ꢀ Integrated gate drivers and bootstrap diodes
ꢀ Temperature feedback
ꢀ Programmable over current protection pin
ꢀ High efficiency Trench IGBT technology
ꢀ Under-voltage lockout for all channels
ꢀ Matched propagation delay for all channels
ꢀ 3.3V/5V Schmitt-triggered input logic
ꢀ Cross-conduction prevention logic
ꢀ Motor Power range 0.25~0.75kW / 85~253 Vac
ꢀ Isolation 2000V
min and CTI> 600
RMS
Absolute Maximum Ratings
VCES / VRRM
IGBT/ FW Diode Blocking Voltage
600
V
A
V+
Positive Bus Input Voltage
450
Io @ TC=25°C
RMS Phase Current (Note 1)
10
5
Io @ TC=100°C
RMS Phase Current (Note 1)
Ipk
Maximum Peak Phase Current (Note 2)
Maximum PWM Carrier Frequency
Maximum Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
13
Fp
20
kHz
W
Pd
25
VISO
VRMS
2000
TJ (IGBT & Diode & IC)
Maximum Operating Junction Temperature
Operating Case Temperature Range
Storage Temperature Range
+150
TC
°C
-20 to +100
-40 to +125
0.8 to 1.0
TSTG
T
Mounting torque Range (M3 screw)
Nm
Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms, TC=25°C, FPWM=16kHz.
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1
IRAM136-1060B
Internal Electrical Schematic – IRAM136-1060B
V+ (13)
Q1
Q4
D1
D4
Q2
Q5
D2
D5
Q3
Q6
D3
D6
V- (16)
R1
VB1 (9)
U, VS1 (10)
VB2 (5)
C1
R3
R2
C2
V, VS2 (6)
VB3 (1)
C3
R4
R5
R6
W, VS3 (2)
D7 D8 D9
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
23 VS1
24 HO1
LO1 16
LO2 15
R13
25 VB1
1 VCC
Driver IC
2 HIN1
3 HIN2
4 HIN3
LO3 14
HIN1 (17)
HIN2 (18)
HIN3 (19)
LIN1 (20)
LIN2 (21)
COM 13
LIN2 LIN3
F
8
ITRIP EN RCIN
LIN1
5
VSS
12
6
7
9
10 11
LIN3 (22)
FLT/EN (23)
R8
R9
I_FB (24)
R10
VCC (25)
ISD (27)
RCIN (28)
VTH (29)
C7
R12
C6
C4
VSS (26)
2
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IRAM136-1060B
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Min
Max
Units Conditions
tP=100μs, TC =100°C
ESR / ERJ series
Bootstrap Resistor Peak Power
(Single Pulse)
PBR Peak
---
15.0
W
High side floating supply offset
voltage
VS1,2,3
VB1,2,3
VCC
VB1,2,3 - 25
-0.3
VB1,2,3 +0.3
V
V
V
High side floating supply voltage
600
20
Low Side and logic fixed supply
voltage
-0.3
Lower of
(VSS+15V) or
VCC+0.3V
VIN
Input voltage LIN, HIN, ITrip
-0.3
V
Inverter Section Electrical Characteristics @TJ= 25°C
Symbol
Parameter
Min
Typ
Max
Units Conditions
Collector-to-Emitter Breakdown
Voltage
V(BR)CES
VIN=0V, IC=250μA
600
---
---
V
V/°C
V
VIN=0V, IC=250μA
(25°C - 150°C)
IC=5A, TJ=25°C
Temperature Coeff. Of Breakdown
Voltage
ꢀV(BR)CES / ꢀT
VCE(ON)
---
0.3
---
---
---
---
---
--
1.5
1.7
5
1.7
---
Collector-to-Emitter Saturation
Voltage
IC=5A, TJ=150°C
80
VIN=0V, V+=600V
VIN=0V, V+=600V, TJ=150°C
IF=5A
Zero Gate Voltage Collector
Current
ICES
ꢂA
V
80
---
1.8
1.45
2.35
---
VFM
Diode Forward Voltage Drop
IF=5A, TJ=150°C
---
Bootstrap Diode Forward Voltage
Drop
VBDFM
IF=1A
--
1.2
--
V
RBR
TJ=25°C
Bootstrap Resistor Value
---
---
---
---
22
---
20
15
---
5
ꢁ
ꢀRBR/RBR
TJ=25°C
Bootstrap Resistor Tolerance
%
---
---
ISD=Vss. See fig. 2 and fig. 11b
ISD=Open. See fig. 2 and fig. 11b
Current Protection Threshold
(positive going)
IBUS_TRIP
A
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3
IRAM136-1060B
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol
Parameter
Min
---
---
---
---
---
---
---
---
---
---
Typ
240
65
Max Units Conditions
IC=5A, V+=400V
EON
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
400
EOFF
ETOT
EREC
tRR
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
90
490
25
---
---
---
---
---
---
μJ
ns
μJ
305
15
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-on Switching Loss
Turn-off Switching Loss
Total Switching Loss
See CT1
115
330
105
435
40
IC=5A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
EON
EOFF
ETOT
EREC
tRR
Diode Reverse Recovery energy
Diode Reverse Recovery time
See CT1
150
ns
IC=8A, V+=400V, VGE=15V
QG
Turn-On IGBT Gate Charge
---
19
29
nC
TJ=150°C, IC=5A, VP=600V
V+= 450V,
FULL SQUARE
RBSOA
Reverse Bias Safe Operating Area
VCC=+15V to 0V
See CT3
TJ=25°C, VP=600V,
V+= 360V,
VCC=+15V to 0V
SCSOA
ICSC
Short Circuit Safe Operating Area
Short Circuit Collector Current
5
---
50
---
---
μs
A
See CT2
TJ=25°C, V+= 400V, VCC=15V
See CT2
---
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at
15V differential (Note 3)
Symbol
VB1,2,3
VS1,2,3
VCC
Definition
Min
VS+12
Note 4
12
Typ
VS+15
---
Max
VS+20
450
Units
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
ITRIP input voltage
V
15
20
V
VITRIP
VIN
VSS
V
V
SS+5
SS+5
---
---
VSS
Logic input voltage LIN, HIN
High side PWM pulse width
External dead time between HIN and LIN
---
V
HIN
1
---
μs
μs
Deadtime
1
---
---
Note 3: For more details, see IR21364 data sheet
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS
.
(please refer to DT97-3 for more details)
4
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IRAM136-1060B
Static Electrical Characteristics Driver Function @ TJ= 25°C
V
BIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Symbol
VIN,th+
Definition
Min
2.5
---
Typ
---
Max
---
Units
V
Positive going input threshold
Negative going input threshold
VIN,th-
---
0.8
11.6
11.4
---
V
VCCUV+, VBSUV+ VCC and VBS supply undervoltage, Positive going threshold
VCCUV-, VBSUV- VCC and VBS supply undervoltage, Negative going threshold
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis
10.6
10.4
---
11.1
10.9
0.2
---
V
V
V
IQBS
Quiescent VBS supply current
Quiescent VCC supply current
Offset Supply Leakage Current
Input bias current VIN=3.3V
Input bias current VIN=0V
ITRIP bias current VT/ITRIP=3.3V
ITRIP bias current VT/ITRIP=0V
ITRIP threshold Voltage
---
120
4
μA
mA
μA
μA
μA
μA
μA
V
IQCC
ILK
---
---
---
---
50
IIN+
---
100
--
195
---
IIN-
-1
ITRIP+
ITRIP-
V(ITRIP
---
3.3
---
6
-1
---
)
0.44
---
0.49
0.07
0.54
---
V(ITrip, HYS)
ITRIP Input Hysteresis
V
Dynamic Electrical Characteristics @ TJ= 25°C
Driver only timing unless otherwise specified.
Symbol
Parameter
Min
Typ
Max Units Conditions
Input to Output propagation turn-
on delay time (see fig.11)
TON
---
---
1.15
1.15
μs
μs
IC=5A, V+=300V
Input to Output propagation turn-
off delay time (see fig. 11)
TOFF
---
---
TFLT
VIN=0 or VIN=5V
Input Filter Time (HIN, LIN)
ITRIP Blanking Time
Dead Time
100
100
220
200
150
290
---
---
ns
ns
ns
TBLT-ITRIP
DT
VIN=0 or VIN=5V, VITRIP=5V
VIN=0 or VIN=5V
360
Matching Propagation Delay Time
(On & Off) all channels
MT
---
40
75
ns
External dead time> 400ns
ITRIP to six switch turn-off
propagation delay (see fig. 2)
IC=5A, V+=300V
TC = 25°C
TITRIP
---
---
---
1.75
---
μs
TFLT-CLR
FAULT clear time (see fig. 2)
32.0
ms
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5
IRAM136-1060B
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
4.6
6.9
0.1
Max Units Conditions
Inverter Operating Condition
Rth(J-C)
5.0
7.6
---
Thermal resistance, per IGBT
Thermal resistance, per Diode
Thermal resistance, C-S
---
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
Rth(J-C)
°C/W
---
Rth(C-S)
---
Creepage Distance, from pins to
backside of module
CD
---
---
---
---
3.2
mm See outline Drawings
-
CTI
Comparative Tracking Index
600
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
Typ
100
2.52
4250
---
Max Units Conditions
R25
R125
B
TC = 25°C
Resistance
97
103
2.80
4335
125
---
kꢁ
kꢁ
TC = 125°C
Resistance
2.25
4165
-40
B-constant (25-50°C)
k
R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range
°C
TC = 25°C
Typ. Dissipation constant
---
1
mW/°C
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min
32.9
0
Typ
33.3
---
Max Units Conditions
RShunt
33.7
TC = 25°C
Resistance
mꢁ
TCoeff
Temperature Coefficient
Power Dissipation
Temperature Range
200 ppm/°C
PShunt
2.2
-40°C< TC <100°C
---
---
W
TRange
---
125
-40
°C
Input-Output Logic Level Table
ITRIP
FLT/EN
HIN1,2,3
LIN1,2,3
U,V,W
V+
0
1
1
1
1
1
0
0
0
0
0
1
X
1
0
0
1
X
X
0
1
0
1
X
X
Off
Off
Off
Off
6
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IRAM136-1060B
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
TITRIP
TFLT-CLR
Figure 2. ITRIP Timing Waveform
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
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7
IRAM136-1060B
Module Pin-Out Description
Pin
1
Name
VB3
W,VS3
na
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
none
2
3
4
na
none
5
VB2
V,VS2
na
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
none
6
7
8
na
none
9
VB1
U,VS1
na
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
none
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
na
V+
none
Positive Bus Input Voltage
none
na
na
none
V-
Negative Bus Input Voltage
Logic Input High Side Gate Driver - Phase 1
Logic Input High Side Gate Driver - Phase 2
Logic Input High Side Gate Driver - Phase 3
Logic Input Low Side Gate Driver - Phase 1
Logic Input Low Side Gate Driver - Phase 2
Logic Input Low Side Gate Driver - Phase 3
Fault Output and Enable Pins
Current Feedback Output Pin
+15V Main Supply
HIN1
HIN2
HIN3
LIN1
LIN2
LIN3
FLT/EN
IFB
VCC
VSS
Negative Main Supply
ISD
Current Protection Level Programming Pin
RCIN Reset Programming Pin
Temperature Feedback
RCIN
VTH
8
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IRAM136-1060B
Typical Application Connection IRAM136-1060B
Application Notes
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Mounting an additional high frequency ceramic capacitor close to the module
pins is highly recommended.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1μF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency and modulation techniques.
Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9.
Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series
with the VCC. (See maximum ratings Table on page 3).
4. WARNING! Please note that after approx. 32ms the FAULT is automatically reset. (See Dynamic
Characteristics Table on page 5). The default Fault clear time is when RCIN pin is open. Refer to Figure
11a for Re selection and desired RCIN setting.
5. PWM generator must be disabled within automatic reset time (TFLT-CLR) to guarantee shutdown of the
system, overcurrent condition must be cleared before resuming operation.
6. ISD can be programmed by using external resistor (Rext) connected to Vss. The default current level is
when ISD pin is open (see Inverter Characteristics Table on page 3). Maximum current level can be
achieved by connecting ISD to Vss. See Figure 11b for desired current level and resistor selection.
7. Fault/En pin (23) must be pulled-up to +5V.
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9
IRAM136-1060B
12
11
10
9
8
7
6
TC = 80ºC
TC = 90ºC
TC = 100ºC
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
PWM Switching Frequency - kHz
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
6
5
4
3
2
1
0
FPWM = 12kHz
FPWM = 16kHz
FPWM = 20kHz
1
10
Modulation Frequency - Hz
100
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
10
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IRAM136-1060B
100
80
60
40
20
0
IOUT = 6A
IOUT = 5A
IOUT = 4A
0
2
4
6
8
10
12
14
16
18
20
PWM Switching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
120
100
80
60
40
20
0
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
0
1
2
3
4
5
6
7
8
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
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11
IRAM136-1060B
160
140
120
100
80
FPWM = 12kHz
FPWM = 16kHz
FPWM = 20kHz
60
40
0
1
2
3
4
5
6
7
8
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
160
TJ avg = 1.2 x TTherm + 17
150
140
130
120
110
100
111
90
65
70
75
80
85
90
95
100
105
110
115
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
12
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IRAM136-1060B
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Max
Avg.
Min
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor Temperature - °C
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
11.0
10ꢀF
10.0
9.0
8.0
6.8ꢀF
7.0
6.0
4.7ꢀF
3.3ꢀF
5.0
4.0
3.0
2.0
1.0
0.0
2.2ꢀF
1.5ꢀF
0
5
10
15
20
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAM136-1060B
24
20
16
12
8
4
0
1
2
3
4
5
6
7
8
9
10
External Pull Up Resistor Selection - Mꢁ
Figure 11a. External Pull Up resistor selection for Fault clear time
(Recommended minimum Pull up Resistor is 1Mꢁ)
24
20
16
12
8
4
0
0
5
10
15
ISD Programmable Pull-Down Resistor - kꢁ
Figure 11b. Itrip Level External Pull down Resistor Selection
20
25
30
35
40
45
50
14
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IRAM136-1060B
Figure 12. Switching Parameter Definitions
Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.
Figure 11c. Diode Reverse Recovery.
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15
IRAM136-1060B
V+
Ho
IN
IO
Hin1,2,3
Lin1,2,3
IC
Driver
U,V,W
Lo
Figure CT1. Switching Loss Circuit
V+
Ho
IN
Hin1,2,3
IC
Driver
U,V,W
Lin1,2,3
IO
Lo
Io
Figure CT2. S.C.SOA Circuit
V+
Ho
IN
IO
Hin1,2,3
IC
Driver
U,V,W
Io
Lin1,2,3
Lo
Figure CT3. R.B.SOA Circuit
16
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IRAM136-1060B
Package Outline IRAM136-1060B
missing pin : 3,4,7,8,11,12,14,15
note3
note5
IRAM136-1060B
P
note4
note2
note1: Unit Tolerance is +0.5mm,
Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
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17
IRAM136-1060B
Package Outline IRAM136-1060B2
missing pin : 3,4,7,8,11,12,14,15
note3
note5
IRAM136-1060B2
P
note4
note2
note1: Unit Tolerance is +0.5mm,
Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
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Visit us at www.irf.com for sales contact information
2008-05-23
18
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