IRAM136-0760A2 [INFINEON]
Integrated Power Hybrid IC for Appliance Motor Drive Applications; 集成功率混合IC,适用于家电电机驱动应用型号: | IRAM136-0760A2 |
厂家: | Infineon |
描述: | Integrated Power Hybrid IC for Appliance Motor Drive Applications |
文件: | 总17页 (文件大小:252K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-97333 RevA
IRAM136-0760A
Series
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
5A, 600V
with Open Emitter Pins
Description
International Rectifier's IRAM136-0760A is a 5A, 600V Integrated Power Hybrid IC with Open Emitter pins
for advanced Appliance Motor Drives applications such as energy efficient Washing Machine and Refrigerator
Compressor Drivers. IR's technology offers an extremely compact, high performance AC motor-driver in a
single isolated package to simplify design.
This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark
3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A
built-in high precision temperature monitor and over-current protection feature, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe
operation. Using a Single in line package (SIP05) with full transfer mold structure and CTI>600 minimizes
PCB space and resolves isolation problems to heatsink.
Features
ꢀ Integrated gate drivers and bootstrap diodes
ꢀ Temperature monitor
ꢀ Protection shutdown pin
ꢀ Low VCE (on) Trench IGBT technology
ꢀ Undervoltage lockout for all channels
ꢀ Matched propagation delay for all channels
ꢀ 3.3V Schmitt-triggered input logic
ꢀ Cross-conduction prevention logic
ꢀ Lower di/dt gate driver for better noise immunity
ꢀ Motor Power range 0.1~0.5kW / 85~253 Vac
ꢀ Isolation 2000V
min and CTI> 600
RMS
Absolute Maximum Ratings
VCES / VRRM
IGBT/ FW Diode Blocking Voltage
600
450
V
A
V+
Positive Bus Input Voltage
Io @ TC=25°C
RMS Phase Current (Note 1)
5
Io @ TC=100°C
RMS Phase Current (Note 1)
3.5
Ipk
Maximum Peak Phase Current (Note 2)
Maximum PWM Carrier Frequency
Maximum Power dissipation per IGBT @ TC =25°C
Isolation Voltage (1min)
5.5
Fp
20
kHz
W
Pd
18
VISO
VRMS
2000
TJ (IGBT & Diode & IC)
Maximum Operating Junction Temperature
Operating Case Temperature Range
Storage Temperature Range
+150
-20 to +100
-40 to +125
0.8 to 1.0
TC
°C
TSTG
T
Mounting torque Range (M3 screw)
Nm
Note 1: Sinusoidal Modulation at V+=320V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.
Note 2: tP<100ms, TC=25°C, FPWM=16kHz.
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1
IRAM136-0760A
Internal Electrical Schematic – IRAM136-0760A
V+ (13)
Q1
Q4
D1
D4
Q2
Q5
D2
D5
Q3
Q6
D3
D6
VRU (17)
VRV (19)
VRW (21)
R1
VB1 (9)
U, VS1 (10)
VB2 (5)
C1
R2
R3
C2
V, VS2 (6)
VB3 (1)
C3
R4
R5
R6
W, VS3 (2)
D7 D8 D9
22 21 20 19 18 17
VB2 HO2 VS2 VB3 HO3 VS3
23 VS1
24 HO1
LO1 16
LO2 15
R9
25 VB1
1 VCC
Driver IC
2 HIN1
3 HIN2
4 HIN3
LO3 14
HIN1 (20)
HIN2 (22)
HIN3 (23)
LIN1 (24)
LIN2 (25)
LIN3 (26)
ITRIP (16)
FLT/EN (18)
COM 13
LIN2 LIN3
F
8
ITRIP EN RCIN
LIN1
5
VSS
12
6
7
9
10 11
R7
R8
VTH (27)
VCC (28)
VSS (29)
C5
C4
2
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IRAM136-0760A
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Min
Max
Units Conditions
tP=100μs, TC =100°C
ESR / ERJ series
Bootstrap Resistor Peak Power
(Single Pulse)
PBR Peak
---
15.0
W
High side floating supply offset
voltage
VS1,2,3
VB1,2,3
VCC
VB1,2,3 - 20
-0.3
VB1,2,3 +0.3
V
V
V
High side floating supply voltage
600
20
Low Side and logic fixed supply
voltage
-0.3
Lower of
(VSS+15V) or
VCC+0.3V
VIN
Input voltage LIN, HIN, ITrip
-0.3
V
Inverter Section Electrical Characteristics @TJ= 25°C
Symbol
Parameter
Min
Typ
Max Units Conditions
Collector-to-Emitter Breakdown
Voltage
V(BR)CES
VIN=0V, IC=250μA
600
---
---
---
V
V/°C
V
VIN=0V, IC=250μA
(25°C - 150°C)
Temperature Coeff. Of
Breakdown Voltage
ꢀV(BR)CES / ꢀT
VCE(ON)
---
0.3
IC=3.5A
TJ=25°C, VCC=15V
---
---
---
---
--
1.7
2.1
5
2.0
---
Collector-to-Emitter Saturation
Voltage
IC=3.5A
TJ=150°C
80
---
VIN=0V, V+=600V
VIN=0V, V+=600V, TJ=150°C
IF=3.5A
Zero Gate Voltage Collector
Current
ICES
ꢂA
V
80
1.6
1.4
2.3
---
VFM
Diode Forward Voltage Drop
IF=3.5A, TJ=150°C
---
Bootstrap Diode Forward Voltage
Drop
VBDFM
IF=1A
--
1.2
---
V
RBR
TJ=25°C
TJ=25°C
Bootstrap Resistor Value
---
---
22
---
---
5
ꢁ
ꢀRBR/RBR
Bootstrap Resistor Tolerance
%
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3
IRAM136-0760A
Inverter Section Switching Characteristics @ TJ= 25°C
Symbol
Parameter
Min
---
---
---
---
---
---
---
---
---
---
Typ
210
20
Max Units Conditions
IC=3.5A, V+=400V
EON
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
340
EOFF
ETOT
EREC
tRR
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
30
370
25
---
---
---
---
---
---
μJ
ns
μJ
245
15
Diode Reverse Recovery energy
Diode Reverse Recovery time
Turn-on Switching Loss
Turn-off Switching Loss
Total Switching Loss
See CT1
135
300
50
IC=3.5A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
EON
EOFF
ETOT
EREC
tRR
350
30
Diode Reverse Recovery energy
Diode Reverse Recovery time
See CT1
170
ns
IC=4A, V+=400V, VCC=15V
QG
Turn-On IGBT Gate Charge
---
9
13
nC
TJ=150°C, IC=3.5A, VP=600V
V+= 450V
FULL SQUARE
RBSOA
Reverse Bias Safe Operating Area
VCC=+15V to 0V
See CT3
TJ=25°C, VP=600V,
V+= 360V,
VCC=+15V to 0V
SCSOA
ICSC
Short Circuit Safe Operating Area
Short Circuit Collector Current
5
---
30
---
---
μs
A
See CT2
TJ=25°C, V+= 400V, VCC=15V
See CT2
---
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at
15V differential (Note 3)
Symbol
VB1,2,3
VS1,2,3
VCC
Definition
Min
VS+12
Note 4
12
Typ
VS+15
---
Max
VS+20
450
Units
High side floating supply voltage
High side floating supply offset voltage
Low side and logic fixed supply voltage
ITRIP input voltage
V
15
20
V
V
VITRIP
VIN
VSS
VSS+5
VSS+5
---
VSS
Logic input voltage LIN, HIN, FLT/EN
---
HIN
High side PWM pulse width
1
1
---
---
---
---
μs
μs
Deadtime
External dead time between HIN and LIN
Note 3: For more details, see IR21364 data sheet
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
4
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IRAM136-0760A
Static Electrical Characteristics Driver Function @ TJ= 25°C
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all six channels. (Note 3)
Symbol
VIN,th+
Definition
Min
2.5
---
Typ
---
Max
---
Units
V
Positive going input threshold for LIN, HIN, FLT/EN
Negative going input threshold for LIN, HIN, FLT/EN
VIN,th-
---
0.8
11.6
11.4
---
V
VCCUV+, VBSUV+ VCC and VBS supply undervoltage, Positive going threshold
VCCUV-, VBSUV- VCC and VBS supply undervoltage, Negative going threshold
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis
10.6
10.4
---
11.1
10.9
0.2
---
V
V
V
IQBS
Quiescent VBS supply current
Quiescent VCC supply current
Offset Supply Leakage Current
Input bias current VIN=3.3V for LIN, HIN, FLT/EN
Input bias current VIN=0V for LIN, HIN, FLT/EN
ITRIP bias current VT/ITRIP=3.3V
ITRIP bias current VT/ITRIP=0V
ITRIP threshold Voltage
---
120
4
μA
mA
μA
μA
μA
μA
μA
V
IQCC
ILK
---
---
---
---
50
IIN+
---
100
--
195
---
IIN-
-1
ITRIP+
ITRIP-
V(ITRIP
---
3.3
---
6
-1
---
)
0.44
---
0.49
0.07
50
0.54
---
V(ITrip, HYS)
Ron_FLT
ITRIP Input Hysteresis
V
ꢀ
Fault low on resistance
---
100
Dynamic Electrical Characteristics @ TJ= 25°C
Driver only timing unless otherwise specified.
Symbol
Parameter
Min
Typ
Max Units Conditions
Input to Output propagation turn-
on delay time (see fig.11)
TON
---
0.7
---
---
μs
μs
IC=3.5A, V+=300V
Input to Output propagation turn-
off delay time (see fig. 11)
TOFF
---
0.7
TFILIN
TEN
VIN=0 or VIN=5V
Input filter time (HIN,LIN,FLT/EN) 100
200
450
600
150
---
600
800
---
ns
ns
ns
ns
VIN=0 or VIN=5V, VEN=0
VIN=0 or VIN=5V, VITRIP=5V
VIN=0 or VIN=5V, VITRIP=5V
EN to output propagation delay
ITRIP to Fault propagation delay
ITRIP Blanking Time
300
400
100
TFLT
TBLT-ITRIP
ITRIP to six switch turn-off
propagation delay (see fig. 2)
IC=3.5A, V+=300V
VIN=0 or VIN=5V
External dead time> 400ns
TC = 25°C
TITRIP
DT
---
220
---
---
290
40
1.75
360
75
μs
ns
Dead Time
Matching Propagation Delay Time
(On & Off) all channels
MT
ns
TFLT-CLR
FAULT clear time (see fig. 2)
---
1.7
---
ms
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5
IRAM136-0760A
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
6.4
9.0
0.1
Max Units Conditions
Inverter Operating Condition
Rth(J-C)
7.0
9.9
---
Thermal resistance, per IGBT
Thermal resistance, per Diode
Thermal resistance, C-S
---
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
Rth(J-C)
°C/W
---
Rth(C-S)
---
Creepage Distance, from pins to
backside of module
CD
---
---
---
---
3.2
mm See outline Drawings
V
CTI
Comparative Tracking Index
600
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
Typ
Max Units Conditions
R25
R125
B
TC = 25°C
Resistance
97
100
103
2.80
4335
125
---
kꢁ
kꢁ
TC = 125°C
R2 = R1e [B(1/T2 - 1/T1)]
Resistance
2.25
4165
-40
2.52
4250
B-constant (25-50°C)
k
Temperature Range
°C
TC = 25°C
Typ. Dissipation constant
---
1
mW/°C
Input-Output Logic Level Table
ITRIP
FLT/EN
HIN1,2,3
LIN1,2,3
U,V,W
V+
0
1
1
1
1
1
0
0
0
0
0
1
X
1
0
0
1
X
X
0
1
0
1
X
X
Off
Off
Off
Off
6
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IRAM136-0760A
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
TITRIP
TFLT-CLR
Figure 2. ITRIP Timing Waveform
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.
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7
IRAM136-0760A
Module Pin-Out Description
Pin
1
Name
VB3
W,VS3
na
Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
none
2
3
4
na
none
5
VB2
V,VS2
na
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
none
6
7
8
na
none
9
VB1
U,VS1
na
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
none
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
na
V+
none
Positive Bus Input Voltage
none
na
na
none
ITRIP
VRU
FLT/EN
VRV
HIN1
VRW
HIN2
HIN3
LIN1
LIN2
LIN3
VTH
Current Protection Pin
Low Side Emitter Connection - Phase 1
Fault Output and Enable Pin
Low Side Emitter Connection - Phase 2
Logic Input High Side Gate Driver - Phase 1
Low Side Emitter Connection - Phase 3
Logic Input High Side Gate Driver - Phase 2
Logic Input High Side Gate Driver - Phase 3
Logic Input Low Side Gate Driver - Phase 1
Logic Input Low Side Gate Driver - Phase 2
Logic Input Low Side Gate Driver - Phase 3
Temperature Feedback
VCC
+15V Main Supply
VSS
Negative Main Supply
8
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IRAM136-0760A
Typical Application Connection IRAM136-0760A
VB3 (1)
W, VS3 (2)
W
BOOT-STRAP
CAPACITORS
VB2 (5)
3-Phase AC
V, VS2 (6)
MOTOR
V
CURRENT SENSING CAN USE A
SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN
VB1 (9)
U, VS1 (10)
U
V+
V+ (13)
DC BUS
CAPACITORS
ITRIP (16)
VRU (17)
PHASE LEG
CURRENT
SENSE
FLT/EN (18)
VRV (19)
HIN1 (20)
VRW (21)
HIN2 (22)
HIN3 (23)
LIN1 (24)
LIN2 (25)
CONTROLLER
LIN3 (26)
VTH (27)
VDD (28)
VSS (29)
15 V
5 V
Enable
100nF
0.1m
10m
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1μF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be
selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings
Table on page 3).
4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent
condition must be cleared before resuming operation.
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9
IRAM136-0760A
8
7
6
5
4
3
2
1
0
TC = 80ºC
TC = 90ºC
TC = 100ºC
4
6
8
10
12
14
16
18
20
PWM Switching Frequency - kHz
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
4
3
2
1
0
FPWM = 12kHz
FPWM = 16kHz
FPWM = 20kHz
1
10
Modulation Frequency - Hz
100
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
10
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IRAM136-0760A
60
50
40
30
20
10
0
IOUT = 4.0A
IOUT = 3.5A
IOUT = 3.0A
0
2
4
6
8
10
12
14
16
18
20
PWM Switching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
80
70
60
50
40
30
20
10
0
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
0
1
2
3
4
5
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz
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11
IRAM136-0760A
160
140
120
100
80
FPWM = 12kHz
FPWM = 16kHz
FPWM = 20kHz
60
40
0
1
2
3
4
5
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
160
TJ avg = 1.2 x TTherm + 21
150
140
130
120
110
100
105
90
65
70
75
80
85
90
95
100
105
110
115
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
12
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IRAM136-0760A
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Max
Avg.
Min
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor Temperature - °C
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
11.0
10ꢁF
10.0
9.0
8.0
6.8ꢁF
7.0
6.0
4.7ꢁF
3.3ꢁF
5.0
4.0
3.0
2.0
1.0
0.0
2.2ꢁF
1.5ꢁF
0
5
10
15
20
PWM Frequency - kHz
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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13
IRAM136-0760A
Figure 11. Switching Parameter Definitions
V
IC
CE
IC
V
CE
90% I
C
50%
IN/LIN
90% IC
H
H /L
IN IN
50%
CE
50%
IN/LIN
V
H
H /L
IN IN
50%
CE
V
10% IC
10% IC
tr
tf
TON
TOFF
Figure 11a. Input to Output propagation turn-on
delay time.
Figure 11b. Input to Output propagation turn-off
delay time.
IF
VCE
HIN/LIN
Irr
trr
Figure 11c. Diode Reverse Recovery.
14
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IRAM136-0760A
V+
5V
Ho
Lo
IN
Hin1,2,3
Lin1,2,3
IC
Driver
U,V,W
IO
Figure CT1. Switching Loss Circuit
V+
Ho
Hin1,2,3
IN
IO
1k
10k
IC
Driver
V
CC
U,V,W
Io
Lin1,2,3
5VZD
Lo
IN
Figure CT2. S.C.SOA Circuit
V+
Ho
IN
IO
Hin1,2,3
1k
10k
V
IC
Driver
CC
U,V,W
Io
5VZD
Lo
Lin1,2,3
IN
Figure CT3. R.B.SOA Circuit
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15
IRAM136-0760A
Package Outline IRAM136-0760A
missing pin : 3,4,7,8,11,12,14,15
note3
note5
IRAM136-0760A
P
note4
note2
note1: Unit Tolerance is +0.5mm,
Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
16
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IRAM136-0760A
Package Outline IRAM136-0760A2
missing pin : 3,4,7,8,11,12,14,15
note3
note5
IRAM136-0760A2
P
note4
note2
note1: Unit Tolerance is +0.5mm,
Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
Font shown on Module.
note5: “P” Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
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Visit us at www.irf.com for sales contact information
2008-07-29
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