IRAM136-0760A2 [INFINEON]

Integrated Power Hybrid IC for Appliance Motor Drive Applications; 集成功率混合IC,适用于家电电机驱动应用
IRAM136-0760A2
型号: IRAM136-0760A2
厂家: Infineon    Infineon
描述:

Integrated Power Hybrid IC for Appliance Motor Drive Applications
集成功率混合IC,适用于家电电机驱动应用

电机 驱动
文件: 总17页 (文件大小:252K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD-97333 RevA  
IRAM136-0760A  
Series  
Integrated Power Hybrid IC for  
Appliance Motor Drive Applications  
5A, 600V  
with Open Emitter Pins  
Description  
International Rectifier's IRAM136-0760A is a 5A, 600V Integrated Power Hybrid IC with Open Emitter pins  
for advanced Appliance Motor Drives applications such as energy efficient Washing Machine and Refrigerator  
Compressor Drivers. IR's technology offers an extremely compact, high performance AC motor-driver in a  
single isolated package to simplify design.  
This advanced HIC is a combination of IR's low VCE (on) Trench IGBT technology and the industry benchmark  
3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally enhanced package. A  
built-in high precision temperature monitor and over-current protection feature, along with the short-circuit  
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe  
operation. Using a Single in line package (SIP05) with full transfer mold structure and CTI>600 minimizes  
PCB space and resolves isolation problems to heatsink.  
Features  
Integrated gate drivers and bootstrap diodes  
Temperature monitor  
Protection shutdown pin  
Low VCE (on) Trench IGBT technology  
Undervoltage lockout for all channels  
Matched propagation delay for all channels  
3.3V Schmitt-triggered input logic  
Cross-conduction prevention logic  
Lower di/dt gate driver for better noise immunity  
Motor Power range 0.1~0.5kW / 85~253 Vac  
Isolation 2000V  
min and CTI> 600  
RMS  
Absolute Maximum Ratings  
VCES / VRRM  
IGBT/ FW Diode Blocking Voltage  
600  
450  
V
A
V+  
Positive Bus Input Voltage  
Io @ TC=25°C  
RMS Phase Current (Note 1)  
5
Io @ TC=100°C  
RMS Phase Current (Note 1)  
3.5  
Ipk  
Maximum Peak Phase Current (Note 2)  
Maximum PWM Carrier Frequency  
Maximum Power dissipation per IGBT @ TC =25°C  
Isolation Voltage (1min)  
5.5  
Fp  
20  
kHz  
W
Pd  
18  
VISO  
VRMS  
2000  
TJ (IGBT & Diode & IC)  
Maximum Operating Junction Temperature  
Operating Case Temperature Range  
Storage Temperature Range  
+150  
-20 to +100  
-40 to +125  
0.8 to 1.0  
TC  
°C  
TSTG  
T
Mounting torque Range (M3 screw)  
Nm  
Note 1: Sinusoidal Modulation at V+=320V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3.  
Note 2: tP<100ms, TC=25°C, FPWM=16kHz.  
www.irf.com  
1
IRAM136-0760A  
Internal Electrical Schematic – IRAM136-0760A  
V+ (13)  
Q1  
Q4  
D1  
D4  
Q2  
Q5  
D2  
D5  
Q3  
Q6  
D3  
D6  
VRU (17)  
VRV (19)  
VRW (21)  
R1  
VB1 (9)  
U, VS1 (10)  
VB2 (5)  
C1  
R2  
R3  
C2  
V, VS2 (6)  
VB3 (1)  
C3  
R4  
R5  
R6  
W, VS3 (2)  
D7 D8 D9  
22 21 20 19 18 17  
VB2 HO2 VS2 VB3 HO3 VS3  
23 VS1  
24 HO1  
LO1 16  
LO2 15  
R9  
25 VB1  
1 VCC  
Driver IC  
2 HIN1  
3 HIN2  
4 HIN3  
LO3 14  
HIN1 (20)  
HIN2 (22)  
HIN3 (23)  
LIN1 (24)  
LIN2 (25)  
LIN3 (26)  
ITRIP (16)  
FLT/EN (18)  
COM 13  
LIN2 LIN3  
F
8
ITRIP EN RCIN  
LIN1  
5
VSS  
12  
6
7
9
10 11  
R7  
R8  
VTH (27)  
VCC (28)  
VSS (29)  
C5  
C4  
2
www.irf.com  
IRAM136-0760A  
Absolute Maximum Ratings (Continued)  
Symbol  
Parameter  
Min  
Max  
Units Conditions  
tP=100μs, TC =100°C  
ESR / ERJ series  
Bootstrap Resistor Peak Power  
(Single Pulse)  
PBR Peak  
---  
15.0  
W
High side floating supply offset  
voltage  
VS1,2,3  
VB1,2,3  
VCC  
VB1,2,3 - 20  
-0.3  
VB1,2,3 +0.3  
V
V
V
High side floating supply voltage  
600  
20  
Low Side and logic fixed supply  
voltage  
-0.3  
Lower of  
(VSS+15V) or  
VCC+0.3V  
VIN  
Input voltage LIN, HIN, ITrip  
-0.3  
V
Inverter Section Electrical Characteristics @TJ= 25°C  
Symbol  
Parameter  
Min  
Typ  
Max Units Conditions  
Collector-to-Emitter Breakdown  
Voltage  
V(BR)CES  
VIN=0V, IC=250μA  
600  
---  
---  
---  
V
V/°C  
V
VIN=0V, IC=250μA  
(25°C - 150°C)  
Temperature Coeff. Of  
Breakdown Voltage  
ꢀV(BR)CES / ꢀT  
VCE(ON)  
---  
0.3  
IC=3.5A  
TJ=25°C, VCC=15V  
---  
---  
---  
---  
--  
1.7  
2.1  
5
2.0  
---  
Collector-to-Emitter Saturation  
Voltage  
IC=3.5A  
TJ=150°C  
80  
---  
VIN=0V, V+=600V  
VIN=0V, V+=600V, TJ=150°C  
IF=3.5A  
Zero Gate Voltage Collector  
Current  
ICES  
ꢂA  
V
80  
1.6  
1.4  
2.3  
---  
VFM  
Diode Forward Voltage Drop  
IF=3.5A, TJ=150°C  
---  
Bootstrap Diode Forward Voltage  
Drop  
VBDFM  
IF=1A  
--  
1.2  
---  
V
RBR  
TJ=25°C  
TJ=25°C  
Bootstrap Resistor Value  
---  
---  
22  
---  
---  
5
ꢀRBR/RBR  
Bootstrap Resistor Tolerance  
%
www.irf.com  
3
IRAM136-0760A  
Inverter Section Switching Characteristics @ TJ= 25°C  
Symbol  
Parameter  
Min  
---  
---  
---  
---  
---  
---  
---  
---  
---  
---  
Typ  
210  
20  
Max Units Conditions  
IC=3.5A, V+=400V  
EON  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
340  
EOFF  
ETOT  
EREC  
tRR  
VCC=15V, L=1.2mH  
Energy losses include "tail" and  
diode reverse recovery  
30  
370  
25  
---  
---  
---  
---  
---  
---  
μJ  
ns  
μJ  
245  
15  
Diode Reverse Recovery energy  
Diode Reverse Recovery time  
Turn-on Switching Loss  
Turn-off Switching Loss  
Total Switching Loss  
See CT1  
135  
300  
50  
IC=3.5A, V+=400V  
VCC=15V, L=1.2mH, TJ=150°C  
Energy losses include "tail" and  
diode reverse recovery  
EON  
EOFF  
ETOT  
EREC  
tRR  
350  
30  
Diode Reverse Recovery energy  
Diode Reverse Recovery time  
See CT1  
170  
ns  
IC=4A, V+=400V, VCC=15V  
QG  
Turn-On IGBT Gate Charge  
---  
9
13  
nC  
TJ=150°C, IC=3.5A, VP=600V  
V+= 450V  
FULL SQUARE  
RBSOA  
Reverse Bias Safe Operating Area  
VCC=+15V to 0V  
See CT3  
TJ=25°C, VP=600V,  
V+= 360V,  
VCC=+15V to 0V  
SCSOA  
ICSC  
Short Circuit Safe Operating Area  
Short Circuit Collector Current  
5
---  
30  
---  
---  
μs  
A
See CT2  
TJ=25°C, V+= 400V, VCC=15V  
See CT2  
---  
Recommended Operating Conditions Driver Function  
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the  
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at  
15V differential (Note 3)  
Symbol  
VB1,2,3  
VS1,2,3  
VCC  
Definition  
Min  
VS+12  
Note 4  
12  
Typ  
VS+15  
---  
Max  
VS+20  
450  
Units  
High side floating supply voltage  
High side floating supply offset voltage  
Low side and logic fixed supply voltage  
ITRIP input voltage  
V
15  
20  
V
V
VITRIP  
VIN  
VSS  
VSS+5  
VSS+5  
---  
VSS  
Logic input voltage LIN, HIN, FLT/EN  
---  
HIN  
High side PWM pulse width  
1
1
---  
---  
---  
---  
μs  
μs  
Deadtime  
External dead time between HIN and LIN  
Note 3: For more details, see IR21364 data sheet  
Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.  
(please refer to DT97-3 for more details)  
4
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IRAM136-0760A  
Static Electrical Characteristics Driver Function @ TJ= 25°C  
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are  
applicable to all six channels. (Note 3)  
Symbol  
VIN,th+  
Definition  
Min  
2.5  
---  
Typ  
---  
Max  
---  
Units  
V
Positive going input threshold for LIN, HIN, FLT/EN  
Negative going input threshold for LIN, HIN, FLT/EN  
VIN,th-  
---  
0.8  
11.6  
11.4  
---  
V
VCCUV+, VBSUV+ VCC and VBS supply undervoltage, Positive going threshold  
VCCUV-, VBSUV- VCC and VBS supply undervoltage, Negative going threshold  
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis  
10.6  
10.4  
---  
11.1  
10.9  
0.2  
---  
V
V
V
IQBS  
Quiescent VBS supply current  
Quiescent VCC supply current  
Offset Supply Leakage Current  
Input bias current VIN=3.3V for LIN, HIN, FLT/EN  
Input bias current VIN=0V for LIN, HIN, FLT/EN  
ITRIP bias current VT/ITRIP=3.3V  
ITRIP bias current VT/ITRIP=0V  
ITRIP threshold Voltage  
---  
120  
4
μA  
mA  
μA  
μA  
μA  
μA  
μA  
V
IQCC  
ILK  
---  
---  
---  
---  
50  
IIN+  
---  
100  
--  
195  
---  
IIN-  
-1  
ITRIP+  
ITRIP-  
V(ITRIP  
---  
3.3  
---  
6
-1  
---  
)
0.44  
---  
0.49  
0.07  
50  
0.54  
---  
V(ITrip, HYS)  
Ron_FLT  
ITRIP Input Hysteresis  
V
Fault low on resistance  
---  
100  
Dynamic Electrical Characteristics @ TJ= 25°C  
Driver only timing unless otherwise specified.  
Symbol  
Parameter  
Min  
Typ  
Max Units Conditions  
Input to Output propagation turn-  
on delay time (see fig.11)  
TON  
---  
0.7  
---  
---  
μs  
μs  
IC=3.5A, V+=300V  
Input to Output propagation turn-  
off delay time (see fig. 11)  
TOFF  
---  
0.7  
TFILIN  
TEN  
VIN=0 or VIN=5V  
Input filter time (HIN,LIN,FLT/EN) 100  
200  
450  
600  
150  
---  
600  
800  
---  
ns  
ns  
ns  
ns  
VIN=0 or VIN=5V, VEN=0  
VIN=0 or VIN=5V, VITRIP=5V  
VIN=0 or VIN=5V, VITRIP=5V  
EN to output propagation delay  
ITRIP to Fault propagation delay  
ITRIP Blanking Time  
300  
400  
100  
TFLT  
TBLT-ITRIP  
ITRIP to six switch turn-off  
propagation delay (see fig. 2)  
IC=3.5A, V+=300V  
VIN=0 or VIN=5V  
External dead time> 400ns  
TC = 25°C  
TITRIP  
DT  
---  
220  
---  
---  
290  
40  
1.75  
360  
75  
μs  
ns  
Dead Time  
Matching Propagation Delay Time  
(On & Off) all channels  
MT  
ns  
TFLT-CLR  
FAULT clear time (see fig. 2)  
---  
1.7  
---  
ms  
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5
IRAM136-0760A  
Thermal and Mechanical Characteristics  
Symbol  
Parameter  
Min  
Typ  
6.4  
9.0  
0.1  
Max Units Conditions  
Inverter Operating Condition  
Rth(J-C)  
7.0  
9.9  
---  
Thermal resistance, per IGBT  
Thermal resistance, per Diode  
Thermal resistance, C-S  
---  
Flat, greased surface. Heatsink  
compound thermal conductivity  
1W/mK  
Rth(J-C)  
°C/W  
---  
Rth(C-S)  
---  
Creepage Distance, from pins to  
backside of module  
CD  
---  
---  
---  
---  
3.2  
mm See outline Drawings  
V
CTI  
Comparative Tracking Index  
600  
Internal NTC - Thermistor Characteristics  
Parameter  
Definition  
Min  
Typ  
Max Units Conditions  
R25  
R125  
B
TC = 25°C  
Resistance  
97  
100  
103  
2.80  
4335  
125  
---  
kꢁ  
kꢁ  
TC = 125°C  
R2 = R1e [B(1/T2 - 1/T1)]  
Resistance  
2.25  
4165  
-40  
2.52  
4250  
B-constant (25-50°C)  
k
Temperature Range  
°C  
TC = 25°C  
Typ. Dissipation constant  
---  
1
mW/°C  
Input-Output Logic Level Table  
ITRIP  
FLT/EN  
HIN1,2,3  
LIN1,2,3  
U,V,W  
V+  
0
1
1
1
1
1
0
0
0
0
0
1
X
1
0
0
1
X
X
0
1
0
1
X
X
Off  
Off  
Off  
Off  
6
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IRAM136-0760A  
HIN1,2,3  
LIN1,2,3  
ITRIP  
U,V,W  
Figure 1. Input/Output Timing Diagram  
HIN1,2,3  
LIN1,2,3  
50%  
50%  
ITRIP  
U,V,W  
50%  
50%  
TITRIP  
TFLT-CLR  
Figure 2. ITRIP Timing Waveform  
Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-  
bridge output voltage would be determined by the direction of current flow in the load.  
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7
IRAM136-0760A  
Module Pin-Out Description  
Pin  
1
Name  
VB3  
W,VS3  
na  
Description  
High Side Floating Supply Voltage 3  
Output 3 - High Side Floating Supply Offset Voltage  
none  
2
3
4
na  
none  
5
VB2  
V,VS2  
na  
High Side Floating Supply voltage 2  
Output 2 - High Side Floating Supply Offset Voltage  
none  
6
7
8
na  
none  
9
VB1  
U,VS1  
na  
High Side Floating Supply voltage 1  
Output 1 - High Side Floating Supply Offset Voltage  
none  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
na  
V+  
none  
Positive Bus Input Voltage  
none  
na  
na  
none  
ITRIP  
VRU  
FLT/EN  
VRV  
HIN1  
VRW  
HIN2  
HIN3  
LIN1  
LIN2  
LIN3  
VTH  
Current Protection Pin  
Low Side Emitter Connection - Phase 1  
Fault Output and Enable Pin  
Low Side Emitter Connection - Phase 2  
Logic Input High Side Gate Driver - Phase 1  
Low Side Emitter Connection - Phase 3  
Logic Input High Side Gate Driver - Phase 2  
Logic Input High Side Gate Driver - Phase 3  
Logic Input Low Side Gate Driver - Phase 1  
Logic Input Low Side Gate Driver - Phase 2  
Logic Input Low Side Gate Driver - Phase 3  
Temperature Feedback  
VCC  
+15V Main Supply  
VSS  
Negative Main Supply  
8
www.irf.com  
IRAM136-0760A  
Typical Application Connection IRAM136-0760A  
VB3 (1)  
W, VS3 (2)  
W
BOOT-STRAP  
CAPACITORS  
VB2 (5)  
3-Phase AC  
V, VS2 (6)  
MOTOR  
V
CURRENT SENSING CAN USE A  
SINGLE SENSE RESISTOR OR PHASE  
LEG SENSING AS SHOWN  
VB1 (9)  
U, VS1 (10)  
U
V+  
V+ (13)  
DC BUS  
CAPACITORS  
ITRIP (16)  
VRU (17)  
PHASE LEG  
CURRENT  
SENSE  
FLT/EN (18)  
VRV (19)  
HIN1 (20)  
VRW (21)  
HIN2 (22)  
HIN3 (23)  
LIN1 (24)  
LIN2 (25)  
CONTROLLER  
LIN3 (26)  
VTH (27)  
VDD (28)  
VSS (29)  
15 V  
5 V  
Enable  
100nF  
0.1m  
10m  
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce  
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins  
will further improve performance.  
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors  
shown connected between these terminals should be located very close to the module pins. Additional high  
frequency capacitors, typically 0.1μF, are strongly recommended.  
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made  
based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be  
selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings  
Table on page 3).  
4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).  
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent  
condition must be cleared before resuming operation.  
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9
IRAM136-0760A  
8
7
6
5
4
3
2
1
0
TC = 80ºC  
TC = 90ºC  
TC = 100ºC  
4
6
8
10  
12  
14  
16  
18  
20  
PWM Switching Frequency - kHz  
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency  
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz  
4
3
2
1
0
FPWM = 12kHz  
FPWM = 16kHz  
FPWM = 20kHz  
1
10  
Modulation Frequency - Hz  
100  
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency  
Sinusoidal Modulation, V+=400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6  
10  
www.irf.com  
IRAM136-0760A  
60  
50  
40  
30  
20  
10  
0
IOUT = 4.0A  
IOUT = 3.5A  
IOUT = 3.0A  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
PWM Switching Frequency - kHz  
Figure 5. Total Power Losses vs. PWM Switching Frequency  
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz  
80  
70  
60  
50  
40  
30  
20  
10  
0
FPWM = 20kHz  
FPWM = 16kHz  
FPWM = 12kHz  
0
1
2
3
4
5
Output Phase Current - ARMS  
Figure 6. Total Power Losses vs. Output Phase Current  
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=100Hz  
www.irf.com  
11  
IRAM136-0760A  
160  
140  
120  
100  
80  
FPWM = 12kHz  
FPWM = 16kHz  
FPWM = 20kHz  
60  
40  
0
1
2
3
4
5
Output Phase Current - ARMS  
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase  
Sinusoidal Modulation, V+=400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz  
160  
TJ avg = 1.2 x TTherm + 21  
150  
140  
130  
120  
110  
100  
105  
90  
65  
70  
75  
80  
85  
90  
95  
100  
105  
110  
115  
Internal Thermistor Temperature Equivalent Read Out - °C  
Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature  
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6  
12  
www.irf.com  
IRAM136-0760A  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Max  
Avg.  
Min  
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80 90 100 110 120 130  
Thermistor Temperature - °C  
Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and  
Normal Thermistor Resistance values vs. Temperature Table.  
11.0  
10ꢁF  
10.0  
9.0  
8.0  
6.8ꢁF  
7.0  
6.0  
4.7ꢁF  
3.3ꢁF  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
2.2ꢁF  
1.5ꢁF  
0
5
10  
15  
20  
PWM Frequency - kHz  
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency  
www.irf.com  
13  
IRAM136-0760A  
Figure 11. Switching Parameter Definitions  
V
IC  
CE  
IC  
V
CE  
90% I  
C
50%  
IN/LIN  
90% IC  
H
H /L  
IN IN  
50%  
CE  
50%  
IN/LIN  
V
H
H /L  
IN IN  
50%  
CE  
V
10% IC  
10% IC  
tr  
tf  
TON  
TOFF  
Figure 11a. Input to Output propagation turn-on  
delay time.  
Figure 11b. Input to Output propagation turn-off  
delay time.  
IF  
VCE  
HIN/LIN  
Irr  
trr  
Figure 11c. Diode Reverse Recovery.  
14  
www.irf.com  
IRAM136-0760A  
V+  
5V  
Ho  
Lo  
IN  
Hin1,2,3  
Lin1,2,3  
IC  
Driver  
U,V,W  
IO  
Figure CT1. Switching Loss Circuit  
V+  
Ho  
Hin1,2,3  
IN  
IO  
1k  
10k  
IC  
Driver  
V
CC  
U,V,W  
Io  
Lin1,2,3  
5VZD  
Lo  
IN  
Figure CT2. S.C.SOA Circuit  
V+  
Ho  
IN  
IO  
Hin1,2,3  
1k  
10k  
V
IC  
Driver  
CC  
U,V,W  
Io  
5VZD  
Lo  
Lin1,2,3  
IN  
Figure CT3. R.B.SOA Circuit  
www.irf.com  
15  
IRAM136-0760A  
Package Outline IRAM136-0760A  
missing pin : 3,4,7,8,11,12,14,15  
note3  
note5  
IRAM136-0760A  
P
note4  
note2  
note1: Unit Tolerance is +0.5mm,  
᫝᫝᫝ Unless Otherwise Specified.  
note2: Mirror Surface Mark indicates Pin1 Identification.  
note3: Part Number Marking.  
Characters Font in this drawing differs from  
᫝᫝᫝᫝ Font shown on Module.  
note4: Lot Code Marking.  
Characters Font in this drawing differs from  
᫝᫝᫝᫝ Font shown on Module.  
note5: “P” Character denotes Lead Free.  
Characters Font in this drawing differs from  
Font shown on Module.  
Dimensions in mm  
For mounting instruction see AN-1049  
16  
www.irf.com  
IRAM136-0760A  
Package Outline IRAM136-0760A2  
missing pin : 3,4,7,8,11,12,14,15  
note3  
note5  
IRAM136-0760A2  
P
note4  
note2  
note1: Unit Tolerance is +0.5mm,  
᫝᫝᫝ Unless Otherwise Specified.  
note2: Mirror Surface Mark indicates Pin1 Identification.  
note3: Part Number Marking.  
Characters Font in this drawing differs from  
᫝᫝᫝᫝ Font shown on Module.  
note4: Lot Code Marking.  
Characters Font in this drawing differs from  
᫝᫝᫝᫝ Font shown on Module.  
note5: “P” Character denotes Lead Free.  
Characters Font in this drawing differs from  
Font shown on Module.  
Dimensions in mm  
For mounting instruction see AN-1049  
Data and Specifications are subject to change without notice  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information  
2008-07-29  
www.irf.com  
17  

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