IRAM109-015SD [INFINEON]
Integrated Power Hybrid IC for Appliance Motor Drive Applications; 集成功率混合IC，适用于家电电机驱动应用
| 型号： | IRAM109-015SD |
| 厂家： | 
Infineon |
| 描述： | Integrated Power Hybrid IC for Appliance Motor Drive Applications |
| 文件： | 总15页 (文件大小：312K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97276 Rev A
IRAM109-015SD
Series
H-Bridge 1A, 500V
Integrated Power Hybrid IC for
Appliance Motor Drive Applications
Description
International Rectifier’s IRAM109-015SD is a multi-chip Hybrid IC developed for low power appliance motor
control applications such as Fans, Pumps, refrigerator compressors, etc. The compact Single in line (SIP-S)
package minimizes PCB space.
Several built-in protection features such as temperature feedback, shoot through prevention, under voltage
lockout, and shutdown input makes this a very robust solution. The internal shunt resistor saves board
space and provides clean current feedback. The combination of highly efficient high voltage MOSFETs, the
industry benchmark Half-Bridge HVIC driver (3.3V/5V input compatible) and thermally enhanced package
makes this a highly competitive solution.
The bootstrapped power supplies for the high side drivers can be generated using internal bootstrap diodes
eliminating the need for isolated power supplies. This feature reduces the component count, board space,
and cost of the system.
Features
• Motor Power range 60~250W / 85~253 Vac.
• Integrated Gate Drivers and Bootstrap Diodes.
• Shut-Down input turns off both channels.
• Under-voltage lockout for all switches.
• Matched propagation delay.
• Schmitt-triggered input logic.
• Cross-conduction prevention logic.
• Low di/dt switching for better noise immunity.
• Internal Current Shunt.
• Internal thermistor for temperature feedback.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM.
VDSS
MOSFET Blocking Voltage
500
400
V
V
Vbus
Positive DC Bus Input Voltage
Io @ TC=25°C
RMS Phase Current
2.0
Io @ TC=100°C
A
W
RMS Phase Current (Note 1)
1.0
Ipk @ TC=25°C
Maximum Peak Phase Current (tp<100µs)
Maximum Power dissipation per FET @ TC =25°C
Maximum Operating Junction Temperature
Operating Case Temperature Range
Storage Temperature Range
5.0
Pd
18
TJ (MOSFET & IC)
+150
-20 to +100
-40 to +125
0.6
TC
°C
TSTG
T
Mounting torque Range (M3 screw)
Nm
Note 1: Sinusoidal Modulation at V+=360V, TJ=150°C, FPWM=20kHz, FMOD=50Hz, MI=0.8, PF=0.6, See Figure 5.
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IRAM109-015SD
Internal Electrical Schematic – IRAM109-015SD
DB1
RB
Q1
RG1
1
2
3
4
5
10
9
VCC
IN
VB
HO
8
SD
DT
VS
7
Q2
LO
RG2
6
Vss
COM
IC1
DB2
Q3
Q4
1
10
9
VCC
VB
HO
RG3
RG4
2
3
4
5
IN
8
SD
DT
Vss
VS
7
LO
6
COM
IC2
RD
RS
TH
1
2
3
4
5
6
7
8
1 12
15 16
19
2
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IRAM109-015SD
Absolute Maximum Ratings (Continued)
Symbol
Parameter
Min
Max
Units Conditions
Bootstrap Diode Reverse
Breakdown Voltage
BVR
TJ = 25°C, IR=1mA
tP=100µs, TC =100°C
600
---
V
W
V
Bootstrap Resistor Peak Power
(Single Pulse)
PBR Peak
VS1,2,3
VB1,2,3
VDD
---
B1,2,3 - 20
-0.3
25.0
VB1,2,3 +0.3
500
High side floating supply offset
voltage
V
High side floating supply voltage
V
Low Side and logic fixed supply
voltage
-0.3
20
V
Lower of
(VSS+15V) or
VIN
Input voltage IN1, IN2
-0.3
V
VDD+0.3V
Electrical Characteristics (TJ= 25°C Unless Otherwise Specified)
Symbol
Parameter
Min
Typ
Max Units Conditions
Drain-to-Source Breakdown
Voltage
V(BR)DSS
VIN=5V, ID=250µA
ID=1A, VDD=15V
500
---
---
V
---
2.2
2.7
RDS(ON)
Drain-to-Source On Resistance
ƻ
ID=1A, VDD=15V, TJ=150°C
VIN=5V, V+=500V
IF=1A
---
---
---
---
5.5
10
---
100
1.1
---
IDSS
VFM
Drain-to-Source Leakage Current
Diode Forward Voltage Drop
µA
V
0.87
0.70
IF=1A, TJ=150°C
Bootstrap Diode Forward Voltage
Drop
VBDFM
RBR
IF=1A
---
---
---
22
1.25
---
V
TJ=25°C
Bootstrap Resistor Value
ƻ
ƩRBR/RBR
TJ=25°C
Bootstrap Resistor Tolerance
---
---
5
%
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IRAM109-015SD
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at
15V differential.
Symbol
Definition
Min
---
Typ
---
Max
360
VS+20
20
Units
V+
Positive Bus Input Voltage
High side floating supply voltage
Low side and logic fixed supply voltage
Logic input voltage (IN & SD) - Note 2
PWM Carrier Frequency
V
VB1,2,3
VDD
VIN
VS+10
10
VS+15
15
V
V
VSS
VDD
---
Fp
---
20
---
KHz
Note 2: Logic operational for Vs from COM-5V to COM+500V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details).
Static Electrical Characteristics (TJ= 25°C Unless Otherwise Specified)
VBIAS (VDD, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all channels (Static Electrical Characteristics are Based on Driver IC Data Sheet).
Symbol
Definition
Min
8
Typ
8.9
8.2
75
Max
9.8
9
Units
V
VDDUV+, VBSUV+ VDD and VBS supply undervoltage, Positive going threshold
VDDUV-, VBSUV-
VDD and VBS supply undervoltage, Negative going threshold
Quiescent VBS supply current
7.4
20
V
IQBS
IQDD
ILK
130
1.6
50
µA
mA
µA
Quiescent VDD supply current
0.4
---
1
Offset Supply Leakage Current
---
Dynamic Electrical Characteristics (TJ= 25°C Unless Otherwise Specified)
Symbol
Parameter
Min
Typ
Max Units Conditions
Input to Output propagation turn-
on delay time (see fig. 13a)
TON
---
2.4
---
---
µs
ns
ID=1.5A, V+=360V
Input to Output propagation turn-
off delay time (see fig. 13b)
TOFF
---
570
Internal Current Sensing Resistor - Shunt Characteristics
Symbol
Parameter
Min
218
0
Typ
220
---
Max Units Conditions
RShunt
222
TC = 25°C
Resistance
mƻ
200 ppm/°C
125
TCoeff
Temperature Coefficient
Temperature Range
TRange
---
0
°C
4
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IRAM109-015SD
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
Max Units Conditions
6.9
°C/W Flat, Insulation Material
Rth(J-C)
5.1
Thermal resistance, per FET
---
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
Typ
100
2.52
4250
---
Max Units Conditions
R25
R125
B
TC = 25°C
Resistance
97
103
2.80
4335
125
---
kƻ
kƻ
TC = 125°C
Resistance
2.25
4165
-40
B-constant (25-50°C)
k
R2 = R1e [B(1/T2 - 1/T1)]
Temperature Range
°C
TC = 25°C
Typ. Dissipation constant
---
1.0
mW/°C
Input-Output Logic Level Table
VS1,2
SD
IN1,2
V+
0
1
1
0
1
0
x
Off
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IRAM109-015SD
Timing Parameter Definitions
IN(LO)
IN
50%
50%
t
SD
IN(HO)
t
t
t
f
on
off
r
90%
90%
HO
LO
LO
HO
10%
10%
Figure 1. Input/Output Timing Diagram
Figure 2. Switching Time Waveform Diagram
IN (LO)
50%
50%
50%
50%
IN
IN (HO)
90%
LO
HO
DT
LO-HO
10%
HO
LO
10%
DT
HO-LO
MT
MT
90%
90%
10%
MDT=
DT
LO-HO
LO
HO
- DT
HO-LO
Figure 3. Deadtime Waveform Diagram
Figure 4. Delay Matching Waveform Diagram
6
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IRAM109-015SD
Typical Application Connection – IRAM109-015SD
Application Circuit Recommendation
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and PO1,2-VB1,2 terminals, and the capacitors
shown connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a, application note AN-1044, or Figure 12. Bootstrap capacitor value must
be selected to limit the power dissipation of the internal resistor in series with VCC (See maximum ratings
Table on page 3).
4. The case of the module is connected to the negative DC Bus and is NOT Isolated. It is
recommended to provide isolation material between case and heat sink to avoid electrical
shock.
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IRAM109-015SD
Module Pin-Out Description
Pin
1
Name
IN1
IN2
VTH
Description
Logic Input Gate Driver - Phase 1
2
Logic Input Gate Driver - Phase 2
3
Temperature Feedback
4
SD
Shun-down Function
VDD
5
+15V Main Supply
VSS
6
Negative Main Supply
ISENSE
V-
7
Current Feedback
8
Negative Bus Input Voltage
9
NA
NA
VS2
VB2
NA
NA
VS1
VB1
NA
NA
V+
none
10
11
12
13
14
15
16
17
18
19
none
Output 2 - High Side Floating Supply Offset Voltage
High Side Floating Supply voltage 2
none
none
Output 1 - High Side Floating Supply Offset Voltage
High Side Floating Supply voltage 1
none
none
Positive Bus Input Voltage
1
19
8
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IRAM109-015SD
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
TC = 80ºC
TC = 90ºC
TC = 100ºC
TJ = 150ºC
Sinusoidal Modulation
0
2
4
6
8
10
12
14
16
18
20
PWM Switching Frequency - kHz
Figure 5. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
Sinusoidal Modulation, V+=360V, TJ=150°C, FMOD=50Hz, MI=0.8, PF=0.6
1.4
TJ = 150ºC
1.2
1
Sinusoidal Modulation
0.8
0.6
0.4
0.2
0
FPWM = 12kHz
FPWM = 16kHz
FPWM = 20kHz
1
10
Modulation Frequency - Hz
100
Figure 6. Maximum Sinusoidal Phase Current vs. Modulation Frequency
Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6
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IRAM109-015SD
30
TJ = 150ºC
25
20
15
10
5
Sinusoidal Modulation
IOUT = 1.2A
IOUT = 1.0A
IOUT = 0.8A
0
0
2
4
6
8
10
12
14
16
18
20
PWM Switching Frequency - kHz
Figure 7. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6
45
40
35
30
25
20
15
10
5
TJ = 150ºC
Sinusoidal Modulation
FPWM = 20kHz
FPWM = 16kHz
FPWM = 12kHz
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Output Phase Current - ARMS
Figure 8. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=360V, TJ=150°C, MI=0.8, PF=0.6
10
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IRAM109-015SD
150
125
100
75
TC is limited to 100ºC
FPWM = 12kHz
PWM = 16kHz
FPWM = 20kHz
F
50
25
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Output Phase Current - ARMS
Figure 9. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=360V, TJ=150°C, Modulation Depth=0.8, PF=0.6
160
TJ avg = 1.27 x TTherm + 3.09
150
140
130
120
110
100
90
80
115.8
70
70
75
80
85
90
95
100
105
110
115
120
Internal Thermistor Temperature Equivalent Read Out - °C
Figure 10. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature
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IRAM109-015SD
5.0
4.5
4.0
TTHERM RTHERM TTHERM RTHERM TTHERM RTHERM
°C
-40
-35
-30
-25
-20
-15
-10
-5
ƻ
°C
25
30
35
40
45
50
55
60
65
70
75
80
85
ƻ
°C
ƻ
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4397119
3088599
2197225
1581881
1151037
846579
628988
471632
357012
272500
209710
162651
127080
100000
79222
63167
50677
40904
33195
27091
22224
18322
15184
12635
10566
8873
90
7481
6337
5384
4594
3934
3380
2916
2522
2190
1907
1665
1459
1282
95
100
105
110
115
120
125
130
135
140
145
150
Min
Avg.
Max
0
5
10
15
20
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Thermistor Temperature - °C
Figure 11. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
11.0
10µF
10.0
9.0
8.0
6.8µF
7.0
6.0
4.7µF
5.0
4.0
3.0
2.0
1.0
0.0
3.3µF
2.2µF
1.5µF
0
5
10
15
20
PWM Frequency - kHz
Figure 12. Recommended Bootstrap Capacitor Value vs. Switching Frequency
12
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IRAM109-015SD
Figure 13. Switching Parameter Definitions
V
ID
ID
V
DS
DS
90% ID
50%
IN1/IN2
90% ID
50%
V
50%
IN1/IN2
IN1/IN2
DS
IN1/IN2
50%
V
CE
10% ID
10% ID
tf
tr
TON
TOFF
Figure 13a. Input to Output propagation turn-on
delay time.
Figure 13b. Input to Output propagation turn-off
delay time.
Figure 13c. Diode Reverse Recovery.
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IRAM109-015SD
Figure CT1. Switching Loss Circuit
14
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IRAM109-015SD
Package Outline IRAM109-015SD
missing pin ; 9,10,13,14,17,18
note3
IRAM109-015SD
ꢀꢁ
ꢀ
note5
note4
note2
note1: Unit Tolerance is +0.4mm,
䇭䇭䇭䇭 Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
䇭䇭䇭 Characters Font in this drawing differs from
䇭䇭䇭䇭 Font shown on Module.
note5: Non-Isolated Back Side.
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
7/2007
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