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IPD65R660CFDBTMA1 [INFINEON]

Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC, DPAK-3;
IPD65R660CFDBTMA1
型号： IPD65R660CFDBTMA1
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, PLASTIC, DPAK-3

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