IPD70N12S3L-12 [INFINEON]
车规级MOSFET;
| 型号： | IPD70N12S3L-12 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总9页 (文件大小：394K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD70N12S3L-12
OptiMOS®-T Power-Transistor
Product Summary
VDS
120
11.5
70
V
RDS(on),max
ID
mW
A
Features
• OptiMOS™ - power MOSFET for automotive applications
PG-TO252-3-11
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD70N12S3L-12
PG-TO252-3-11 QN12L12
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I D
T C=25°C, VGS=10V
Continuous drain current
70
A
T C=100°C, VGS=10V1)
48
Pulsed drain current1)
I D,pulse
EAS
T C=25°C
280
410
Avalanche energy, single pulse1)
Avalanche current, single pulse
Gate source voltage
I D=35A
mJ
A
I AS
-
70
VGS
-
±20
V
Ptot
T C=25 °C
Power dissipation
125
W
°C
T j, T stg
Operating and storage temperature
-
-55 ... +175
Rev. 1.0
page 1
2016-06-20
IPD70N12S3L-12
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
1.2
62
40
K/W
minimal footprint
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0V, I D= 1mA
VGS(th) VDS=VGS, I D=83µA
Drain-source breakdown voltage
Gate threshold voltage
120
1.2
-
-
V
1.7
2.4
VDS=120V, VGS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
0.01
1
0.1
10
µA
VDS=120V, VGS=0V,
T j=125°C1)
I GSS
VGS=20V, VDS=0V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) VGS=4.5V, I D=70A
VGS=10 V, I D=70 A
Drain-source on-state resistance
11.7
9.6
15.2
11.5
mW
Rev. 1.0
page 2
2016-06-20
IPD70N12S3L-12
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4270
950
90
12
6
5550 pF
1235
VGS=0V, VDS=25V,
f =1MHz
135
-
-
-
-
ns
VDD=20V, VGS=10V,
I D=70A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
35
7
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
15
11
59
3.5
21
17
77
-
nC
Q gd
VDD=96V, I D=70A,
VGS=0 to 10V
Q g
Vplateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
70
T C=25°C
I S,pulse
280
VGS=0V, I F=70A,
T j=25°C
VSD
Diode forward voltage
0.6
1
1.2
V
VR=60V, I F=50A,
diF/dt =100A/µs
Reverse recovery time1)
Reverse recovery charge1)
t rr
-
-
80
-
-
ns
nC
Q rr
185
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2016-06-20
IPD70N12S3L-12
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS = 10 V
I D = f(T C); VGS = 10 V
140
120
100
80
80
70
60
50
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
100
0.5
10 µs
100 µs
0.1
10-1
0.05
1 ms
0.01
10-2
single pulse
10-3
1
0.1
1
10
VDS [V]
100
1000
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
Rev. 1.0
page 4
2016-06-20
IPD70N12S3L-12
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: VGS
35
5 V
10 V
4.5 V
3 V
120
4 V
3.5 V
25
15
5
4 V
80
40
0
3.5 V
4.5 V
5 V
10 V
3 V
0
1
2
3
4
5
0
20
40
60
80
100
120
140
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 70 A; VGS = 10 V
250
200
150
100
50
25
20
15
10
5
-55 °C
25 °C
175 °C
0
1
2
3
4
5
-60
-20
20
60
100
140
180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2016-06-20
IPD70N12S3L-12
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
104
103
102
101
2.5
Ciss
2
420 µA
Coss
85 µA
1.5
1
0.5
0
Crss
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I A S= f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
100 °C
102
150 °C
10
25 °C
175 °C
101
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2016-06-20
IPD70N12S3L-12
13 Typical avalanche energy
EAS = f(T j)
14 Typ. drain-source breakdown voltage
VBR(DSS) = f(T j); I D = 1 mA
parameter: I D
135
900
17.5 A
800
130
125
120
115
110
700
600
500
35 A
400
300
70 A
200
100
0
-55
-15
25
65
105
145
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 70 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
V GS
Qg
24 V
96 V
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
0
10
20
30
40
50
60
Qgate [nC]
Rev. 1.0
page 7
2016-06-20
IPD70N12S3L-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2016
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0
page 8
2016-06-20
IPD70N12S3L-12
Revision History
Version
Date
Changes
20.06.2016 Final Data Sheet
Revision 1.0
Rev. 1.0
page 9
2016-06-20
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