IPD70P04P4L-08 [INFINEON]
OptiMOS-P2 Power-Transistor; 的OptiMOS -P2功率三极管
| 型号： | IPD70P04P4L-08 |
| 厂家： | 
Infineon |
| 描述： | OptiMOS-P2 Power-Transistor |
| 文件： | 总9页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD70P04P4L-08
OptiMOS®-P2 Power-Transistor
Product Summary
V DS
R DS(on)
I D
-40
7.8
-70
V
mW
A
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
PG-TO252-3-313
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD70P04P4L-08
PG-TO252-3-313
4P04L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C,
V GS=-10V
I D
Continuous drain current
-70
-55
A
T C=100°C,
V GS=-10V1)
Pulsed drain current1)
I D,pulse
E AS
I AS
T C=25°C
-280
24
Avalanche energy, single pulse1)
Avalanche current, single pulse
Gate source voltage
I D=-35A
mJ
A
-
-70
±162)
75
V GS
P tot
-
V
T C=25 °C
Power dissipation
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2011-03-14
IPD70P04P4L-08
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
2.0
62
40
K/W
minimal footprint
6 cm2 cooling area3)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= -1mA
V GS(th) V DS=V GS, I D=-120µA
Drain-source breakdown voltage
Gate threshold voltage
-40
-
-
V
-1.2
-1.7
-2.2
V DS=-32V, V GS=0V,
T j=25°C
I DSS
Zero gate voltage drain current
-
-
-0.05
-20
-1
µA
V DS=-32V, V GS=0V,
T j=125°C1)
-200
I GSS
V GS=-16V, V DS=0V
Gate-source leakage current
-
-
-
-
-100 nA
R DS(on) V GS=-4.5V, I D=-40A
V GS=-10V, I D=-70A
Drain-source on-state resistance
9.0
5.7
12.9
7.8
mW
Rev. 1.0
page 2
2011-03-14
IPD70P04P4L-08
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
4177
1185
45
5430 pF
1778
V GS=0V, V DS=-25V,
f =1MHz
90
12
-
-
-
-
ns
V DD=-20V,
V GS=-10V, I D=-70A,
R G=3.5W
10
t d(off)
t f
Turn-off delay time
Fall time
50
41
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
14
10
18
20
92
-
nC
Q gd
V DD=-32V, I D=-70A,
V GS=0 to -10V
Q g
71
V plateau
Gate plateau voltage
-3.5
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
-70
T C=25°C
I S,pulse
-280
V GS=0V, I F=-70A,
T j=25°C
V SD
Diode forward voltage
Reverse recovery time1)
-
-1
-1.3
V
t rr
-
-
46
43
-
-
ns
V R=-20V, I F=-50A,
di F/dt =-100A/µs
Reverse recovery charge1)
Q rr
nC
1) Defined by design. Not subject to
production test.
2)
V =+5V/-16V according AEC;
GS
VGS=+16V for max 168h at TJ=175°C
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2011-03-14
IPD70P04P4L-08
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≤ -6V
I D = f(T C); V GS = -10V
80
60
40
20
0
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
0.5
100
10 µs
0.1
100 µs
0.05
10-1
1 ms
0.01
single pulse
10-2
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
-V DS [V]
t p [s]
Rev. 1.0
page 4
2011-03-14
IPD70P04P4L-08
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: -V GS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: -V GS
60
280
3V
2.8V
10V
3.5V
5V
55
50
45
40
35
30
25
20
15
10
5
210
140
70
4.5V
4V
4V
4.5V
5V
3.5V
3V
10V
0
0
0
20
40
60
0
1
2
3
4
5
6
-V DS [V]
-I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -70 A; V GS = -10 V
280
210
140
70
13
12
11
10
9
8
7
175 °C
25 °C
-55 °C
6
0
-60
-20
20
60
100
140
180
2
3
4
5
6
T j [°C]
-V GS [V]
Rev. 1.0
page 5
2011-03-14
IPD70P04P4L-08
9 Typ. gate threshold voltage
V GS(th) = f(T j); V GS = V DS
parameter: -I D
10 Typ. capacitances
C = f(V DS); V GS = 0 V; f = 1 MHz
105
104
103
102
101
2.4
2
Ciss
1200µA
Coss
1.6
120µA
1.2
0.8
Crss
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
-V DS [V]
11 Typical forward diode characteristicis
IF = f(VSD
12 Drain-source breakdown voltage
)
V BR(DSS) = f(T j); I D = -1 mA
parameter: T j
103
45
44
43
42
41
40
39
38
37
36
35
102
25 °C
175 °C
101
100
0
0.4
0.8
1.2
1.6
-60
-20
20
60
100
140
180
-V SD [V]
T j [°C]
Rev. 1.0
page 6
2011-03-14
IPD70P04P4L-08
13 Typ. gate charge
V GS = f(Q gate); I D = -70 A pulsed
parameter: V DD
14 Gate charge waveforms
12
10
8
VGS
Q g
-32V
-8V
6
4
Qgate
2
Qgd
Q gs
0
0
10
20
30
Q gate [nC]
40
50
60
Rev. 1.0
page 7
2011-03-14
IPD70P04P4L-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2011-03-14
IPD70P04P4L-08
Revision History
Version
Date
Changes
0.1
0.2
1.0
08.03.2010 Initial Target Data Sheet
20.12.2010 Preliminary Data Sheet
14.03.2011 Final Data Sheet
Rev. 1.0
page 9
2011-03-14
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