IPD70P04P409ATMA2 [INFINEON]
Power Field-Effect Transistor, 73A I(D), 40V, 0.0089ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN;
| 型号： | IPD70P04P409ATMA2 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 73A I(D), 40V, 0.0089ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-313, 3/2 PIN 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IPD70P04P4-09
OptiMOS®-P2 Power-Transistor
Product Summary
V DS
R DS(on)
I D
-40
8.9
-73
V
mΩ
A
Features
PG-TO252-3-313
• P-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPD70P04P4-09
PG-TO252-3-313 4P0409
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T C=25°C,
GS=-10V
I D
Continuous drain current
-73
-52
A
V
T C=100°C,
GS=-10V1)
V
Pulsed drain current1)
I D,pulse
E AS
I AS
T C=25°C
-292
24
Avalanche energy, single pulse1)
Avalanche current, single pulse
Gate source voltage
I D=-36A
mJ
A
-
-73
±20
75
V GS
P tot
-
V
T C=25 °C
Power dissipation
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.0
page 1
2010-05-26
IPD70P04P4-09
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics1)
R thJC
R thJA
Thermal resistance, junction - case
SMD version, device on PCB
-
-
-
-
-
-
-
2
K/W
minimal footprint
62
40
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0V, I D= -1mA
-V GS(th) V DS=V GS, I D=-120µA
Drain-source breakdown voltage
Gate threshold voltage
-40
2.0
-
-
V
3.0
4.0
V DS=-32V, V GS=0V,
I DSS
Zero gate voltage drain current
-
-
-0.04
-20
-1
µA
T j=25°C
V
DS=-32V, V GS=0V,
-200
T j=125°C2)
I GSS
V GS=-20V, V DS=0V
Gate-source leakage current
-
-
-
-100 nA
8.9
R DS(on) V GS=-10V, I D=-70A
Drain-source on-state resistance
6.4
mΩ
Rev. 1.0
page 2
2010-05-26
IPD70P04P4-09
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
3700
1400
40
4810 pF
1820
V GS=0V, V DS=-25V,
f =1MHz
80
19
-
-
-
-
ns
V DD=-20V,
12
V
GS=-10V, I D=-73A,
t d(off)
t f
Turn-off delay time
Fall time
24
R G=3.5Ω
31
Gate Charge Characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
20
10
26
20
70
-
nC
Q gd
V DD=-32V, I D=-70A,
V
GS=0 to -10V
Q g
54
V plateau
Gate plateau voltage
-5.4
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
-73
T C=25°C
I S,pulse
-292
V GS=0V, I F=-70A,
T j=25°C
V SD
Diode forward voltage
-
-1
-1.3
V
Reverse recovery time1)
t rr
-
-
50
50
-
-
ns
V R=-20V, I F=-50A,
di F/dt =-100A/µs
Reverse recovery charge1)
Q rr
nC
1) Defined by design. Not subject to production test.
2
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2010-05-26
IPD70P04P4-09
1 Power dissipation
2 Drain current
P
tot = f(T C); V GS ≤ -6V
I D = f(T C); V GS = -10V
80
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(V DS); T C = 25 °C; D = 0, SMD
parameter: t p
parameter: D =t p/T
101
1000
1 µs
100
0.5
10 µs
100
100 µs
0.1
1 ms
0.05
10-1
0.01
10
single pulse
10-2
10-3
1
10-6
10-5
10-4
10-3
10-2
10-1
100
0.1
1
10
100
-V DS [V]
t p [s]
Rev. 1.0
page 4
2010-05-26
IPD70P04P4-09
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: -V GS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
25
280
7V
5V
6V
8V
10V
20
15
10
5
210
140
70
7V
6V
8V
10V
5V
0
0
70
140
210
280
0
1
2
3
4
5
6
-V DS [V]
-ID [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = -6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = -70 A; V GS = -10 V
280
210
140
70
11
10
9
8
7
6
175 °C
25 °C
5
-55 °C
4
0
-60
-20
20
60
100
140
180
2
3
4
5
6
7
8
T j [°C]
-V GS [V]
Rev. 1.0
page 5
2010-05-26
IPD70P04P4-09
9 Typ. gate threshold voltage
GS(th) = f(T j); V GS = V DS
10 Typ. capacitances
V
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: -I D
105
104
103
102
101
4
3.5
3
Ciss
1200µA
120µA
Coss
2.5
2
1.5
Crss
1
0
5
10
15
20
25
30
-60
-20
20
60
T j [°C]
100
140
180
-V DS [V]
11 Typical forward diode characteristicis
I F = f(VSD
12 Drain-source breakdown voltage
)
V BR(DSS) = f(T j); I D = -1 mA
parameter: T j
103
45
44
43
42
41
40
39
38
37
36
35
102
25 °C
175 °C
101
100
0
0.4
0.8
1.2
1.6
-60
-20
20
60
100
140
180
-V SD [V]
T j [°C]
Rev. 1.0
page 6
2010-05-26
IPD70P04P4-09
13 Typ. gate charge
GS = f(Q gate); I D = -73 A pulsed
14 Gate charge waveforms
V
parameter: V DD
12
VGS
-8V
10
8
Qg
-32V
6
4
Qgate
2
Qgd
Qgs
0
0
10
20
30
40
50
60
Q gate [nC]
Rev. 1.0
page 7
2010-05-26
IPD70P04P4-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2010
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2010-05-26
IPD70P04P4-09
Revision History
Version
Date
Changes
1.0
21.05.2010 Final Data Sheet
Rev. 1.0
page 9
2010-05-26
相关型号：
IPD70P04P4L08ATMA1
Power Field-Effect Transistor, 70A I(D), 40V, 0.0078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
INFINEON
IPD70R1K4CEAUMA1
Power Field-Effect Transistor, 700V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
INFINEON
IPD70R360P7S
顺应当下和未来反激式拓扑产品的趋势而开发——全新 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电
INFINEON
IPD70R600CEAUMA1
Power Field-Effect Transistor, 700V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
INFINEON
IPD70R600P7S
顺应当下和未来反激式拓扑产品的趋势而开发——全新 700V CoolMOS™ P7 超结 MOSFET 系列产品具有比目前所使用超结技术更强的性能，适用于手机充电器或笔记本电
INFINEON
IPD70R950CEAUMA1
Power Field-Effect Transistor, 700V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
INFINEON
IPD78CN10NGATMA1
Power Field-Effect Transistor, 13A I(D), 100V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3
INFINEON
IPD78CN10NGBUMA1
Power Field-Effect Transistor, 13A I(D), 100V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明