IPD65R950CFD [INFINEON]
650V CoolMOS™ CFD2 替代产品是600V CoolMOS™ CFD7;
| 型号： | IPD65R950CFD |
| 厂家： | 
Infineon |
| 描述： | 650V CoolMOS™ CFD2 替代产品是600V CoolMOS™ CFD7 |
| 文件： | 总15页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CFD2 650V
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
Data Sheet
Rev. 2.2
Final
Industrial & Multimarket
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
DPAK
1
Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs,
designed according to the superjunction (SJ) principle and pioneered by
Infineon Technologies. 650V CoolMOS™ CFD2 series combines the
experience of the leading SJ MOSFET supplier with high class innovation. The
resulting devices provide all benefits of a fast switching SJ MOSFET while
offering an extremely fast and robust body diode. This combination of
extremely low switching, commutation and conduction losses together with
highest robustness make especially resonant switching applications more
reliable, more efficient, lighter and cooler.
Features
• Ultra-fast body diode
• Easy to use/drive
• Very high commutation ruggedness
• Pb-free plating,available in Halogen free mold compounda)
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Fully qualified according to JEDEC for Industrial Applications
Applications
650V CoolMOS™ CFD2 is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom.
Table 1 Key Performance Parameters
Parameter
V‡» @ TÎ ÑÈà
RDS(on),max
Qg,typ
Value
700
0.95
14.1
11
Unit
V
Â
nC
A
ID,pulse
Eoss @ 400V
Body diode di/dt
Qrr
1.4
µJ
A/µs
µC
ns
A
900
0.12
53
trr
Irrm
4
Type / Ordering Code
IPD65R950CFD
Package
Marking
65F6950
Related Links
see Appendix A
PG-TO 252
Final Data Sheet
Rev. 2.2, 2020-05-15
2
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
Rev. 2.2, 2020-05-15
3
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
2
Maximum ratings
at TÎ = 25°C, unless otherwise specified
Table 2 Maximum ratings
Values
Parameter
Symbol
Unit Note / Test Condition
Min.
Typ.
Max.
3.9
2.4
11
Continuous drain current1)
I ‡
A
T† = 25°C
T† = 100°C
T† = 25°C
Pulsed drain current2)
I ‡‚ÔÛÐÙþ
Eƒ»
A
I ‡ = 1.0A, V‡‡ = 50V
(see table 18)
Avalanche energy, single pulse
50
mJ
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
Eƒ¸
I ƒ¸
dv/dt
V•»
0.10
1.0
50
mJ
A
I ‡ = 1.0A, V‡‡ = 50V
V/ns V‡» = 0 ... 400V
-20
-30
-55
20
V
static
30
AC (f > 1 Hz)
Operating and storage temperature
Continuous diode forward current
Diode pulse current
T΂TÙÚÃ
I »
150
3.9
11
°C
A
T† = 25°C
T† = 25°C
I »‚ÔÛÐÙþ
A
V‡» = 0 ... 400V, I »‡ ù I ‡,
TÎ = 25°C
(see table 16)
Reverse diode dv/dt3)
dv/dt
50
V/ns
Maximum diode commutation speed
Power dissipation
diË/dt
PÚÓÚ
900
A/µs
W
36.7
T†=25°C
1) Limited by TÎ ÑÈà. Maximum
2) Pulse width tÔ limited by TÎ ÑÈà
3) VÔþÈÏ<Vñ…¸ò‡»», TÎ<TÎ ÑÈà, identical low and high side switch with same Rg
Rev. 2.2, 2020-05-15
Final Data Sheet
4
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
3
Thermal characteristics
Table 3 Thermal characteristics DPAK
Values
Parameter
Symbol
Unit Note / Test Condition
Min.
Typ.
Max.
Thermal resistance, junction - case
RÚÌœ†
3.4
°C/W
°C/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction - ambient1) RÚÌœƒ
62
SMD version, device on PCB, 6cm²
cooling area
35
Soldering temperature, wave- &
TÙÓÐÁ
260
°C
reflow MSL
reflowsoldering allowed
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is
vertical without air stream cooling.
Final Data Sheet
Rev. 2.2, 2020-05-15
5
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
4
Electrical characteristics
at TÎ = 25°C, unless otherwise specified
Table 4 Static characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min.
650
3.5
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
Vñ…¸ò‡»»
V•»ñÚÌò
I ‡»»
V
V•» = 0V, I ‡ = 1mA
4
4.5
1
V
V‡» = V•», I ‡ = 0.2mA
Zero gate voltage drain current
µA
V‡» = 650V, V•» = 0V, TÎ = 25°C
V‡» = 650V, V•» = 0V, TÎ = 150°C
V•» = 20V, V‡» = 0V
100
Gate-source leakage current
I •»»
100
nA
Â
Drain-source on-state resistance
R‡»ñÓÒò
0.855 0.95
V•» = 10V, I ‡ = 1.5A, TÎ = 25°C
V•» = 10V, I ‡ = 1.5A, TÎ = 150°C
f = 1MHz, open drain
2.223
8
Gate resistance
R•
Â
Table 5 Dynamic characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min.
Typ.
380
23
Max.
Input capacitance
CÍÙÙ
pF
pF
V•» = 0V, V‡» = 100V, f = 1MHz
Output capacitance
CÓÙÙ
Effective output capacitance, energy
related1)
CÓñþØò
CÓñÚØò
16
68
pF
pF
V•» = 0V, V‡» = 0 ... 400V
Effective output capacitance, time related2)
I ‡ = constant, V•» = 0V,
V‡» = 0 ... 400V
Turn-on delay time
Rise time
tÁñÓÒò
tØ
9
ns
ns
ns
ns
V‡‡ = 400V, V•» = 13V, I ‡ = 2.2A,
R• = 10.2Â
(see table 17)
6.5
43
Turn-off delay time
Fall time
tÁñÓËËò
tË
13.8
Table 6 Gate charge characteristics
Values
Typ.
2.5
Parameter
Symbol
Unit Note / Test Condition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
QÃÙ
nC
nC
nC
V
V‡‡ = 480V, I ‡ = 2.2A,
V•» = 0 to 10V
QÃÁ
8
QÃ
14.1
6.4
Gate plateau voltage
VÔÐÈÚþÈÛ
1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Rev. 2.2, 2020-05-15
Final Data Sheet
6
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
Table 7 Reverse diode characteristics
Values
Parameter
Symbol
Unit Note / Test Condition
Min.
Typ.
0.9
53
Max.
Diode forward voltage
V»‡
tØØ
V
V•» = 0V, I Œ = 2.2A, TÎ = 25°C
Reverse recovery time
ns
µC
A
V¸ = 400V, I Œ = 2.2A,
di Œ/dt = 100A/µs
(see table 16)
Reverse recovery charge
Peak reverse recovery current
QØØ
I ØØÑ
0.12
4
Final Data Sheet
Rev. 2.2, 2020-05-15
7
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
5
Electrical characteristics diagrams
Table 8
Power dissipation
Max. transient thermal impedance
40
101
35
30
25
20
0.5
100
0.2
0.1
0.05
P
P
P
P
Z
Z
Z
Z
15
10
5
10-1
0.02
0.01
single pulse
0
10-2
0
40
80
TC [°C]
120
160
10-5
10-4
10-3
tp [s]
10-2
10-1
Ptot=f(TC)
ZthJC =f(tP); parameter: D=tp/T
Table 9
Safe operating area
Safe operating area
102
102
1 µs
1 µs
101
101
10 µs
10 µs
100 µs
100 µs
100
100
I
I
I
I
II
II
1 ms
1 ms
10 ms
10 ms
10-1
10-1
DC
DC
10-2
10-2
100
101
102
103
100
101
102
103
V
DS [V]
V
DS [V]
I D=f(VDS); TC=25 °C; D=0; VGS>7.5V; parameter: tp
Final Data Sheet
I D=f(VDS); TC=80 °C; D=0; VGS>7.5V; parameter: tp
Rev. 2.2, 2020-05-15
8
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
Table 10
Typ. output characteristics
Typ. output characteristics
14
8
20 V
10 V
8 V
20 V
10 V
7
12
10
8
6
5
8 V
7 V
4
I
I
I
I
II
II
6
4
2
0
3
2
1
0
7 V
6 V
6 V
5.5 V
5 V
5.5 V
5 V
4.5 V
4.5 V
0
5
10
DS [V]
15
20
0
5
10
DS [V]
15
20
V
V
I D=f(VDS); Tj=25 °C; parameter: VGS
I D=f(VDS); Tj=125 °C; parameter: VGS
Table 11
Typ. drain-source on-state resistance
Drain-source on-state resistance
7
3
6
5
4
2
98%
typ
5.5V 6 V
6.5 V 7 V
R
R
R
R
RR
RR
10 V
3
2
1
1
0
0
1
2
3
4
I D [A]
5
6
7
8
-60
-20
20
60
Tj [°C]
100
140
180
RDS(on)=f(I D); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); I D=1.5 A; VGS=10 V
Final Data Sheet
9
Rev. 2.2, 2020-05-15
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
Table 12
Typ. transfer characteristics
Typ. gate charge
14
10
9
8
25 °C
12
10
8
120 V
480 V
7
6
5
4
3
2
1
0
150 °C
I
I
I
I
V
V
V
V
6
4
2
0
0
2
4
6
8
10
0
4
8
gate [nC]
12
16
V
GS [V]
Q
I D=f(VGS); VDS = 20V; parameter: Tj
VGS=f(Qgate); I D=2.2 A pulsed; parameter: VDD
Table 13
Avalanche energy
Drain-source breakdown voltage
60
750
725
700
675
650
50
40
30
E
E
E
E
V
V
V
V
625
600
575
550
20
10
0
0
50
100
Tj [°C]
150
200
-60
-20
20
60
Tj [°C]
100
140
180
E
AS=f(Tj); I D=1.0 A; VDD=50 V
VBR(DSS)=f(Tj); I D=1.0 mA
Final Data Sheet
Rev. 2.2, 2020-05-15
10
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
Table 14
Typ. capacitances
Typ. Coss stored energy
104
2.00
1.80
1.60
1.40
1.20
1.00
103
Ciss
102
C
C
C
C
E
E
E
E
0.80
0.60
0.40
0.20
0.00
Coss
101
Crss
100
0
100
200
300
400
500
600
0
100
200
300
VDS [V]
400
500
600
V
DS [V]
C=f(VDS); VGS=0 V; f=1 MHz
Eoss=f(VDS)
Table 15
Forward characteristics of reverse diode
101
25 °C
125 °C
100
I
I
I
I
10-1
0.0
0.5
1.0
VSD [V]
1.5
2.0
I F=f(VSD); parameter: Tj
Final Data Sheet
11
Rev. 2.2, 2020-05-15
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
6
Test Circuits
Table 16 Diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
RG1
VDS
RG2
RG1 = RG2
Table 17 Switching times
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
10%
VGS
td(off)
tf
td(on)
ton
tr
toff
Table 18 Unclamped inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
VD
ID
VDS
VDS
VDS
ID
Final Data Sheet
Rev. 2.2, 2020-05-15
12
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
7
Package Outlines
MILLIMETERS
DIMENSION
DOCUMENT NO.
Z8B00003328
MIN.
2.16
0.00
0.64
0.65
4,95
0.46
0.40
5.97
5.02
6.35
4.32
MAX.
2.41
0.15
0.89
1.15
5.50
0.61
0.98
6.22
5.84
6.73
5.50
A
A1
b
REVISION
07
b2
b3
c
SCALE:
10:1
c2
D
2mm
0
1
D1
E
EUROPEAN PROJECTION
E1
e
2.29
4.57
3
e1
N
H
9.40
1.18
0.89
0.51
10.48
1.78
1.27
1.02
L
ISSUE DATE
01.04.2020
L3
L4
Figure 1 Outline PG-TO 252, dimensions in mm/inches
Final Data Sheet
Rev. 2.2, 2020-05-15
13
650V CoolMOS™ CFD2 Power Transistor
IPD65R950CFD
8
Appendix A
Table 19 Related Links
IFX Design Tools:
•
http://www.infineon.com/cms/en/product/promopages/designtools/index.html
IFX CoolMOS Webpage:
•
http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8
Final Data Sheet
Rev. 2.2, 2020-05-15
14
650VꢀCoolMOSªꢀCFD2ꢀPowerꢀTransistor
IPD65R950CFD
RevisionꢀHistory
IPD65R950CFD
Revision:ꢀ2020-05-26,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2.2
2012-08-28
2020-05-26
Update package outline
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15
Rev.ꢀ2.2,ꢀꢀ2020-05-26
相关型号：
IPD70N03S4L-14
Power Field-Effect Transistor, 30A I(D), 30V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
INFINEON
IPD70N04S307ATMA1
Power Field-Effect Transistor, 82A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
IPD70N10S312ATMA1
Power Field-Effect Transistor, 70A I(D), 100V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
INFINEON
IPD70N10S3L12ATMA1
Power Field-Effect Transistor, 70A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
INFINEON
IPD70N12S311ATMA1
Power Field-Effect Transistor, 70A I(D), 120V, 0.0111ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
INFINEON
IPD70N12S3L12ATMA1
Power Field-Effect Transistor, 70A I(D), 120V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO252-3-11, 3/2 PIN
INFINEON
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