BFP405F [INFINEON]
NPN Silicon RF Transistor; NPN硅晶体管RF
| 型号： | BFP405F |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon RF Transistor |
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP405F
SIEGET 25
NPN Silicon RF Transistor
Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm
Noise figure F = 1.25 dB at 1.8 GHz
XYs
3
4
2
1
outstanding G = 23 dB at 1.8 GHz
ms
Transition frequency f = 25 GHz
T
TSFP-4
Gold metallization for high reliability
t
o
p
v
i
e
w
SIEGET 25 GHz f - Line
T
4
3
A
L
s
1
2
d
i
r
e
c
t
i
o
n
o
f
u
n
r
e
e
l
i
n
g
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
2=E 3=C 4=E
Package
BFP405F
ALs
1=B
TSFP-4
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
4.5
15
1.5
12
1
V
CEO
CBO
EBO
I
mA
mW
°C
C
Base current
I
B
P
55
Total power dissipation
tot
1)
T
122°C
S
Junction temperature
Ambient temperature
Storage temperature
T
150
j
T
-65 ... 150
-65 ... 150
A
T
stg
Thermal Resistance
2)
R
K/W
Junction - soldering point
500
thJS
1
T is measured on the emitter lead at the soldering point to the pcb
S
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
Dec-07-2001
BFP405F
SIEGET 25
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
4.5
-
5
-
-
V
V
Collector-emitter breakdown voltage
I = 1 mA, I = 0
(BR)CEO
C
B
150 nA
I
Collector-base cutoff current
= 5 V, I = 0
CBO
V
CB
E
-
-
15
µA
-
I
Emitter-base cutoff current
= 1.5 V, I = 0
EBO
V
EB
C
50
90
150
h
DC current gain
I = 5 mA, V = 4 V
FE
C
CE
AC characteristics (verified by random sampling)
18
-
25
-
0.1
-
GHz
pF
f
Transition frequency
T
I = 10 mA, V = 3 V, f = 2 GHz
C
CE
0.05
0.2
C
Collector-base capacitance
= 2 V, f = 1 MHz
cb
V
CB
-
C
Collector-emitter capacitance
= 2 V, f = 1 MHz
ce
V
CE
-
0.25
1.25
-
C
Emitter-base capacitance
= 0.5 V, f = 1 MHz
eb
V
EB
-
-
dB
F
Noise figure
I = 2 mA, V = 2 V, Z = Z
,
C
CE
S
Sopt
f = 1.8 GHz
1)
-
-
-
-
23
18
14
0
-
-
-
-
Power gain, maximum stable
G
ms
I = 5 mA, V = 2 V, Z = Z
, Z = Z
,
C
CE
S
Sopt
L
Lopt
f = 1.8 GHz
2
|S |
Insertion power gain
I = 5 mA, V = 2 V, f = 1.8 GHz,
21
C
CE
Z = Z = 50
S
L
2)
dBm
IP
Third order intercept point at output
3
I = 5 mA, V = 2 V, Z =Z =50 ,
C
CE
S
L
f = 1.8 GHz
3)
P
1dB Compression point at output
I = 5 mA, V = 2 V, f = 1.8 GHz,
-1dB
C
CE
Z =Z =50
S
L
1
G
= |S / S
21 12
|
ms
2
IP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 from 0.1MHz to 6GHz.
3
DC current no input power
2
Dec-07-2001
BFP405F
SIEGET 25
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
BF =
83.23
0.16493
10.526
0.25052
15
NF =
1.0405
0.21024
39.251
fA
V
-
-
VAF =
NE =
IKF =
BR =
IKR =
RB =
A
ISE =
NR =
ISC =
IRB =
RC =
15.761
fA
1.7763
34.368
1.3152
1.3491
3.7265
4.5899
1.3364
0.99532
1.4935
0
0.96647
-
-
-
VAR =
NC =
RBM =
CJE =
TF =
V
A
0.037223 fA
0.21215
0.12691
0.37747
0.19762
96.941
A
-
RE =
1.9289
0.70367
0.3641
0
fF
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
V
MJE =
VTF =
CJC =
-
ps
mA
V
V
-
ITF =
VJC =
TR =
deg
fF
0.48652
0
XCJC = 0.08161
-
-
ns
fF
VJS =
EG =
TNOM
0.75
1.11
300
V
eV
K
MJS =
XTI =
0
-
-
-
-
3
0.99469
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
IS = fA N =
2
RS =
20
1.02
-
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
L =
0.42
nH
nH
nH
L
=
0.22
nH
nH
nH
-
BI
BO
R
=
0.15
0.26
0.11
0.35
0.13
L
=
=
0.28
0.22
LBI
EO
L =
L
EI
CO
R
=
KBO-EO = 0.10
KBO-CO = 0.01
KEO-CO = 0.11
LEI
L =
CI
-
R
=
-
LCI
KCI-EI = -0.05
KBI-CI = -0.08
KBI-EI = 0.20
-
-
-
C
C
C
=
=
=
34
2
fF
fF
fF
BE
BC
CE
33
Valid up to 6GHz
The TSFP-4 package has two emitter leads. To avoid high complexity of the package equivalent circuit,
both leads are combined in one electrical connection.
R
are series resistors for the inductances L and K
xI xa-yb
are the coupling coefficients between
LxI
the inductances L and L . The referencepins for the coupled ports are B, E, C, B`, E`, C`.
xa yb
For examples and ready to use parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
3
Dec-07-2001
BFP405F
SIEGET 25
For non-linear simulation:
Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
If you need simulation of the reverse characteristics, add the diode with the
C'-E'- diode data between collector and emitter.
Simulation of package is not necessary for frequencies < 100MHz.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Note:
This transistor is constructed in a common emitter configuration. This feature causes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
C
B
E
E
EHA07307
Transistor Schematic Diagram
The common emitter configuration shows the following advantages:
Higher gain because of lower emitter inductance.
Power is dissipated via the grounded emitter leads, because the chip is mounted
on copper emitter leadframe.
Please note, that the broadest lead is the emitter lead.
4
Dec-07-2001
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