2SC2613(K) [HITACHI]

POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN;


型号：	2SC2613(K)
厂家：	HITACHI SEMICONDUCTOR
描述：	POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN
文件：	总7页 (文件大小：42K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SC2613

Silicon NPN Triple Diffused

Application

High voltage, high speed and high power switching

Outline

TO-220AB

1. Base

2. Collector

(Flange)

3. Emitter

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

500

400

Collector peak current

Base current

I_C(peak)

I_B

2.5

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at T_C= 25°C.

P_C*¹

°C

150

Tstg

–55 to +150

2SC2613

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to emitter sustain

voltage

V_CEO(sus)

400

—

I_C= 0.2 A, R_BE= ∞,

L = 100 mH

V_CEX(sus)

400

—

I_C= 5 A, I_B1= –I_B2= 1 A

V_BE= –5 V, L = 180 µH,

Clamped

Emitter to base breakdown

voltage

V_(BR)EBO

I_E= 10 mA, I_C= 0

Collector cutoff current

I_CBO

I_CEO

h_FE1

h_FE2

—

100

—

µA

V_CB= 400 V, I_E= 0

V_CE= 350 V, R_BE= ∞

V_CE= 5 V, I_C= 2.5 A*¹

V_CE= 5 V, I_C= 5 A*¹

I_C= 2.5 A, I_B= 0.5 A*¹

DC current transfer ratio

—

Collector to emitter saturation V_CE(sat)

voltage

—

1.0

Base to emitter saturation

voltage

V_BE(sat)

—

1.5

I_C= 2.5 A, I_B= 0.5 A*¹

Turn on time

t_on

t_stg

t_f

—

1.0

2.5

1.0

µs

I_C= 5 A, I_B1= –I_B2= 1 A,

V_CC150 V

Storage time

Fall time

1.2

—

Note: 1. Pulse test.

Maximum Collector Dissipation Curve

Area of Safe Operation

100

i_{C (peak)}

I_{C (max)}

(Continuous)

1.0

DC Operation

= 25

0.1

Ta = 25°C, 1 Shot

0.01

100 300 1,000

100

150

Collector to emitter Voltage V_CE(V)

Case Temperature T_C(°C)

2SC2613

Transient Thermal Resistance

Collector Current Derating Rate

100

1.0

0.3

0.1

0.03

0.01

T_C= 25°C

0.01

0.1

1.0

10 (s)

100

150

0.01

10 (ms)

Case temperature T_C(°C)

Time t

Collector to Emitter Voltage

vs. Base to Emitter Resistance

Reverse Bias Area of Safe Operation

325 V, 10 A

600

I_C= 1 mA

500

400

300

400 V, 5 A

I_B2= –1.0 A

100

450 V, 1.0 A

200

300

400

500

100

1 k

10 k

100 k

1 M

Collector to emitter Voltage V_CE(V)

Base to emitter resistance R_BE(Ω)

2SC2613

Typical Transfer Characteristics

Typical Output Characteristics

0.5

0.4

T_C= 25°C

0.3

0.2

V_CE= 5 V

0.1

0.05 A

T_C= 25°C

I_B= 0

0.4

0.8

1.2

1.6

2.0

Base to emitter voltage V_BE(V)

Collector to emitter Voltage V_CE(V)

DC Current Transfer Ratio vs.

Collector Current

Collector to Emitter Saturation

Voltage vs. Base Current

100

75°C

25°C

2 A

1 A

1.0

0.3

0.1

I_C= 0.5 A

0.03

0.01

V_CE= 5 V

T_C= 25°C

0.01 0.03 0.1 0.3

1.0

0.01 0.03 0.1 0.3

1.0

Collector current I_C(A)

Base current I_B(A)

2SC2613

Base to Emitter Saturation Voltage

vs. Collector Current

Switching Time vs. Collector Current

I_C= 5 I_B

t_stg

_C= 25°C

1.0

t_f

t_on

0.3

0.1

0.3

0.1

0.03

0.01

0.03

0.01

I_C= 5 I_B1= –5 I_B2

V_CC= 150 V

0.01 0.03 0.1 0.3

1.0

0.01 0.03 0.1 0.3

1.0

Collector current I_C(A)

Switching Time vs. Case Temperature

1.0

0.5

t_stg

t_f

t_on

0.2

0.1

I_C= 5 A

_B1= –I_B2=1 A

R_L= 30 Ω

V_CC= 150 V

0.05

100

125

Case temperature T_C(°C)

Unit: mm

11.5 MAX

10.16 ± 0.2

4.44 ± 0.2

9.5

8.0

+0.1

-0.08

1.26 ± 0.15

φ 3.6

2.7 MAX

1.5 MAX

0.76 ± 0.1

2.54 ± 0.5

0.5 ± 0.1

2.54 ± 0.5

Hitachi Code

JEDEC

EIAJ

TO-220AB

Conforms

Weight (reference value) 1.8 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

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Hitachi Tower

Singapore 049318

Tel: 535-2100

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Germany

Tel: <49> (89) 9 9180-0

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179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

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