2SC2615 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2615 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2615
DESCRIPTION
·
·With TO-247 package
·High voltage,high speed
APPLICATIONS
·For high voltage,high speed and high
power switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-247) and symbol
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
VALUE
500
400
7
UNIT
V
Open emitter
Open base
V
Open collector
V
Collector current (DC)
Collector power dissipation
Junction temperature
Storage temperature
8
A
PC
TC=25℃
80
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2615
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
400
7
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.2A; IB=0
Emitter-base breakdown voltage
IE=10mA; IC=0
V
Collector-emitter saturation voltage IC=4A ;IB=0.8A
1.0
1.5
0.1
0.1
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=4A ;IB=0.8A
VCB=400V; IE=0
VEB=5V; IC=0
V
mA
mA
IEBO
hFE-1
IC=4A ; VCE=5V
IC=8A ; VCE=5V
15
7
hFE-2
DC current gain
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2615
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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