2SC2618 [HITACHI]

Silicon NPN Epitaxial; NPN硅外延


型号：	2SC2618
厂家：	HITACHI SEMICONDUCTOR
描述：	Silicon NPN Epitaxial NPN硅外延
文件：	总5页 (文件大小：27K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

2SC2618

Silicon NPN Epitaxial

Application

•

Low frequency amplifier

Complementary pair with 2SA1121

Outline

MPAK

1. Emitter

2. Base

3. Collector

2SC2618

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

500

°C

Collector power dissipation

Junction temperature

Storage temperature

P_C

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V_(BR)CBO

—

I_C= 10 µA, I_E= 0

Collector to emitter breakdown V_(BR)CEO

voltage

—

I_C= 1 mA, R_BE= ∞

I_E= 10 µA, I_C= 0

V_CB= 20 V, I_C= 0

Emitter to base breakdown

voltage

V_(BR)EBO

Collector cutoff current

DC current transfer ratio

I_CBO

—

0.5

µA

h_FE1

320

V_CE= 3 V, I_C= 10 mA

(Pulse test)

h_FE2

—

V_CE= 3 V, I_C= 500 mA

(Pulse test)

Collector to emitter saturation V_CE(sat)

voltage

0.2

0.64

0.6

—

I_C= 150 mA, I_B= 15 mA

(Pulse test)

Base to emitter voltage

V_BE

V_CE= 3 V, I_C= 10 mA

(Pulse test)

Note: 1. The 2SC2618 is grouped by h_FE1as follows.

Grade

Mark

h_FE1

60 to 120

100 to 200

160 to 320

See characteristic curves of 2SC1213.

2SC2618

Maximum Collector Dissipation Curve

150

100

150

Ambient Temperature Ta (°C)

Unit: mm

+ 0.10

– 0.06

+ 0.10

– 0.05

0.16

3 – 0.4

0 – 0.1

0.95

1.9 ± 0.2

2.95 ± 0.2

Hitachi Code

JEDEC

MPAK

—

EIAJ

Conforms

Weight (reference value) 0.011 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

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