2SC2618 [KEXIN]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SC2618 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总1页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Epitaxial
2SC2618
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Low frequency amplifier.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
35
35
4
V
V
500
mA
mW
Collector dissipation
Junction temperature
Storage temperature
PC
150
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO
Testconditons
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
35
35
4
V
IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
V
ICBO
hFE1
hFE2
VCB = 20V, IC = 0
0.5
ìA
VCE = 3V , IC = 10mA
VCE = 3V , IC = 500mA
100
10
320
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat) IC = 150mA , IB = 15mA
VBE VCE = 3V , IC = 10mA
0.2
0.6
V
V
0.64
hFE Classification
Marking
hFE
RC
RD
100 200
160 320
1
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