2SC2613-E [RENESAS]
5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN;
| 型号： | 2SC2613-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220AB, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Customer Support Dept.
April 1, 2003
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2SC2613
Silicon NPN Triple Diffused
ADE-208-886 (Z)
1st. Edition
September 2000
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
500
400
V
7
V
5
A
Collector peak current
Base current
IC(peak)
10
A
IB
2.5
A
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
PC*1
Tj
40
W
°C
°C
150
Tstg
–55 to +150
2SC2613
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
VCEO(sus)
400
—
—
V
IC = 0.2 A, RBE = ∞,
L = 100 mH
VCEX(sus)
400
—
—
—
—
V
V
IC = 5 A, IB1 = –IB2 = 1 A
VBE = –5 V, L = 180 µH,
Clamped
Emitter to base breakdown
voltage
V(BR)EBO
7
IE = 10 mA, IC = 0
Collector cutoff current
ICBO
ICEO
hFE1
hFE2
—
—
15
7
—
—
—
—
—
100
100
—
µA
µA
VCB = 400 V, IE = 0
VCE = 350 V, RBE = ∞
VCE = 5 V, IC = 2.5 A*1
VCE = 5 V, IC = 5 A*1
IC = 2.5 A, IB = 0.5 A*1
DC current transfer ratio
—
Collector to emitter saturation VCE(sat)
voltage
—
1.0
V
V
Base to emitter saturation
voltage
VBE(sat)
—
—
1.5
IC = 2.5 A, IB = 0.5 A*1
Turn on time
ton
tstg
tf
—
—
—
—
1.0
2.5
1.0
µs
µs
µs
IC = 5 A, IB1 = –IB2 = 1 A,
VCC 150 V
Storage time
Fall time
1.2
—
Note: 1. Pulse test.
Maximum Collector Dissipation Curve
Area of Safe Operation
60
40
20
100
10
iC (peak)
IC (max)
(Continuous)
1.0
DC Operation
= 25
(T
C
°
C)
0.1
Ta = 25°C, 1 Shot
0.01
1
3
10
30
100 300 1,000
0
50
100
150
Collector to emitter Voltage VCE (V)
Case Temperature TC (°C)
2SC2613
Transient Thermal Resistance
10
Collector Current Derating Rate
100
80
60
40
20
3
1.0
0.3
0.1
0.03
0.01
TC = 25°C
0.01
0.1
0.1
1.0
1.0
10 (s)
0
50
100
150
0.01
10 (ms)
Case temperature TC (°C)
Time t
Collector to Emitter Voltage
vs. Base to Emitter Resistance
Reverse Bias Area of Safe Operation
325 V, 10 A
600
10
IC = 1 mA
8
6
4
2
0
500
400
300
400 V, 5 A
IB2 = –1.0 A
100
450 V, 1.0 A
0
200
300
400
500
100
1 k
10 k
100 k
1 M
Collector to emitter Voltage VCE (V)
Base to emitter resistance RBE (Ω)
2SC2613
Typical Transfer Characteristics
Typical Output Characteristics
5
4
3
2
1
5
4
3
2
1
0.5
0.4
TC = 25°C
VCE = 5 V
0.3
0.2
0.1
0.05 A
TC = 25°C
IB = 0
1
2
3
4
5
0
0.4
0.8
0
1.2
1.6
2.0
Base to emitter voltage VBE (V)
Collector to emitter Voltage VCE (V)
DC Current Transfer Ratio vs.
Collector Current
Collector to Emitter Saturation
Voltage vs. Base Current
100
10
3
75°C
25°C
2 A
1 A
30
10
1.0
0.3
0.1
3
1
IC = 0.5 A
0.03
0.01
VCE = 5 V
TC = 25°C
0.01 0.03 0.1 0.3
1.0
3
10
0.01 0.03 0.1 0.3
1.0
3
10
Collector current IC (A)
Base current IB (A)
2SC2613
Base to Emitter Saturation Voltage
vs. Collector Current
Switching Time vs. Collector Current
10
10
3
3
IC = 5 IB
TC = 25°C
tstg
1.0
1.0
tf
ton
0.3
0.1
0.3
0.1
0.03
0.01
0.03
0.01
IC = 5 IB1 = –5 IB2
.
VCC = 150 V
.
0.01 0.03 0.1 0.3
1.0
3
10
0.01 0.03 0.1 0.3
1.0
3
10
Collector current IC (A)
Collector current IC (A)
Switching Time vs. Case Temperature
5
2
1.0
0.5
tstg
tf
ton
0.2
0.1
IC = 5 A
IB1 = –IB2 =1 A
RL = 30 Ω
.
VCC = 150 V
.
0.05
0
25
50
75
100
125
Case temperature TC (°C)
2SC2613
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