2SC2613K [ETC]
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-220AB ; 晶体管| BJT | NPN | 400V V（ BR ） CEO | 5A I（C ） | TO- 220AB\n
| 型号： | 2SC2613K |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 5A I(C) | TO-220AB
|
| 文件： | 总4页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2613(K)
Silicon NPN Triple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-220AB
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
500
400
V
7
V
5
A
Collector peak current
Base current
IC(peak)
10
A
IB
2.5
A
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
PC*1
Tj
40
W
°C
°C
150
Tstg
–55 to +150
2SC2613(K)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
voltage
VCEO(sus)
400
—
—
V
IC = 0.2 A, RBE = ∞, L = 100
mH
VCEX(sus)
400
—
—
—
—
V
V
IC = 5 A, IB1 = –IB2 = 1 A
VBE = –5 V, I = 180 µH,
Clamped
Emitter to base breakdown
voltage
V(BR)EBO
7
IE = 10 mA, IC = 0
Collector cutoff current
ICBO
ICEO
hFE1
hFE2
—
—
15
7
—
—
—
—
—
100
100
—
µA
µA
VCB = 400 V, IE = 0
VCE = 350 V, RBE = ∞
VCE = 5 V, IC = 2.5 A*1
VCE = 5 V, IC = 5 A*1
IC = 2.5 A, IB = 0.5 A*1
DC current transfer ratio
—
Collector to emitter saturation VCE(sat)
voltage
—
1.0
V
Base to emitter saturation
voltage
VBE(sat)
—
—
—
—
1.5
1.0
V
IC = 2.5 A, IB = 0.5 A*1
Turn on time
ton
µs
IC = 5 A, IB1 = –IB2 = 1 A,
VCC 150 V
Storage time
tstg
tf
—
—
1.2
—
2.5
1.0
µs
µs
Fall time
Note: 1. Pulse test.
See characteristic curves of 2SC2613.
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case Temperature Tc (°C)
2
2SC2613(K)
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
3
2SC2613(K)
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
U S A
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
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16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Tel: 415-589-8300
Fax: 535-1533
Fax: 415-583-4207
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Berkshire SL6 8YA
United Kingdom
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World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 0628-585000
Fax: 0628-778322
Tel: 27359218
Fax: 27306071
4
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