2SK3340-01 [FUJI]
N-CHANNEL SILICON POWER MOS-FET; N沟道硅功率MOS -FET
| 型号： | 2SK3340-01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOS-FET |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FUJI POWER MOS-FET
2SK3340-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
ID
Rating
400
±23
±92
±30
23
Unit
V
Equivalent circuit schematic
Continuous drain current
Pulsed drain current
A
ID(puls]
VGS
IAR *2
EAV*1
PD
A
Drain(D)
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
A
545
295
+150
mJ
W
°C
Gate(G)
Tch
Tstg
-55 to +150
Source(S)
<
*1 L=1.89mH, Vcc=40V *2 Tch=150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Item
Test Conditions
Symbol
V(BR)DSS
VGS(th)
Drain-source breakdown voltaget
Gate threshold voltage
ID=1mA
ID=1mA
VGS=0V
V
400
VDS=VGS
V
2.5
3.0
10
0.2
10
0.16
3.5
500
1.0
100
0.2
Tch=25°C
µA
mA
nA
VDS=400V
VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
VGS=±30V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VDS=0V
IGSS
ID=11.5A VGS=10V
RDS(on)
gfs
Ω
S
8.5
17
2650
500
230
22
ID=11.5A VDS=25V
VDS=25V
3975
pF
Ciss
750
345
35
Output capacitance
VGS=0V
Coss
Crss
td(on)
tr
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=300V ID=23A
ns
105
225
120
137
36
160
340
180
210
55
VGS=10V
Turn-off time toff
td(off)
tf
RGS=10 Ω
nC
Total gate charge
Vcc=200V
QG
QGS
QGD
IAV
Gate-Source charge
Gete-Drain charge
ID=23A
48
75
VGS=10V
23
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=1.89mH Tch=25°C
1.15
450
8.6
1.73
V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/µs
Tch=25°C
VSD
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.424
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
50.0
°C/W
1
2SK3340-01
FUJI POWER MOSFET
Characteristics
Safe operating area
Allowable Power Dissipation
PD=f(Tc)
ID=f(VDS):Single Pulse,Tc=25°C
400
350
300
250
200
150
100
50
t=
102
101
100
10-1
1µs
10µs
D.C.
100µs
1ms
10ms
100ms
t
t
D=
T
T
0
100
101
102
VDS [V]
103
0
25
50
75
100
125
150
°
Tc [ C]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
60
50
40
30
20
10
0
100
10
1
15V
20V
10V
6.5V
6.0V
5.5V
5.0V
VGS=4.5V
0.1
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10
12
14
VGS[V]
VDS [V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.5
0.4
0.3
0.2
0.1
0.0
5.5V
VGS=4.5V
5.0V
6.0V
6.5V
10V
15V
20V
0.1
0.1
0
10
20
30
40
50
60
1
10
100
ID [A]
ID [A]
2
2SK3340-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=11.5A,VGS=10V
VGS(th)=f(Tch):VDS=VGS,ID=1mA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
max.
typ.
min.
max.
typ.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
Tch [°C]
75
100
125
150
Tch [
°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=23A,Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10-7
25
20
15
10
5
10-8
Ciss
Vcc= 80V
200V
320V
10-9
Coss
Crss
10-10
10-11
10-2
0
10-1
100
101
102
0
50
100
150
200
250
300
Qg [C]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
Ω
t=f(ID):Vcc=300V,VGS=10V,RG=10
104
100
10
1
103
102
101
td(off)
tf
tr
td(on)
0.1
10-1
100
101
102
0.00
0.25
0.50
0.75
1.00
1.25
1.50
ID [A]
VSD [V]
3
2SK3340-01
FUJI POWER MOSFET
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=40V,I(AV)<=23A
0
10
600
500
400
300
200
100
0
0.5
-1 0.2
10
0.1
0.05
0.02
-2
0.01
10
t
0
t
D=
T
T
-3
10
-5
10
-4
10
-3
10
-2
-1
10
0
10
1
10
10
t [s]
0
25
50
75
100
125
150
starting Tch [°C]
4
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