2SK3340-01 [FUJI]

N-CHANNEL SILICON POWER MOS-FET; N沟道硅功率MOS -FET
2SK3340-01
型号: 2SK3340-01
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

N-CHANNEL SILICON POWER MOS-FET
N沟道硅功率MOS -FET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总4页 (文件大小:88K)
中文:  中文翻译
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FUJI POWER MOS-FET  
2SK3340-01  
N-CHANNEL SILICON POWER MOS-FET  
Features  
High speed switching  
Low on-resistance  
No secondary breadown  
Low driving power  
Avalanche-proof  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DC converters  
Maximum ratings and characteristicAbsolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Drain-source voltage  
Symbol  
VDS  
ID  
Rating  
400  
±23  
±92  
±30  
23  
Unit  
V
Equivalent circuit schematic  
Continuous drain current  
Pulsed drain current  
A
ID(puls]  
VGS  
IAR *2  
EAV*1  
PD  
A
Drain(D)  
Gate-source voltage  
V
Repetitive or non-repetitive  
Maximum Avalanche Energy  
Max. power dissipation  
Operating and storage  
temperature range  
A
545  
295  
+150  
mJ  
W
°C  
Gate(G)  
Tch  
Tstg  
-55 to +150  
Source(S)  
<
*1 L=1.89mH, Vcc=40V *2 Tch=150°C  
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Item  
Test Conditions  
Symbol  
V(BR)DSS  
VGS(th)  
Drain-source breakdown voltaget  
Gate threshold voltage  
ID=1mA  
ID=1mA  
VGS=0V  
V
400  
VDS=VGS  
V
2.5  
3.0  
10  
0.2  
10  
0.16  
3.5  
500  
1.0  
100  
0.2  
Tch=25°C  
µA  
mA  
nA  
VDS=400V  
VGS=0V  
Zero gate voltage drain current  
IDSS  
Tch=125°C  
VGS=±30V  
Gate-source leakage current  
Drain-source on-state resistance  
Forward transcondutance  
Input capacitance  
VDS=0V  
IGSS  
ID=11.5A VGS=10V  
RDS(on)  
gfs  
S
8.5  
17  
2650  
500  
230  
22  
ID=11.5A VDS=25V  
VDS=25V  
3975  
pF  
Ciss  
750  
345  
35  
Output capacitance  
VGS=0V  
Coss  
Crss  
td(on)  
tr  
Reverse transfer capacitance  
Turn-on time ton  
f=1MHz  
VCC=300V ID=23A  
ns  
105  
225  
120  
137  
36  
160  
340  
180  
210  
55  
VGS=10V  
Turn-off time toff  
td(off)  
tf  
RGS=10  
nC  
Total gate charge  
Vcc=200V  
QG  
QGS  
QGD  
IAV  
Gate-Source charge  
Gete-Drain charge  
ID=23A  
48  
75  
VGS=10V  
23  
A
Avalanche capability  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
L=1.89mH Tch=25°C  
1.15  
450  
8.6  
1.73  
V
IF=2xIDR VGS=0V Tch=25°C  
IF=IDR VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
VSD  
trr  
Qrr  
ns  
µC  
Thermalcharacteristics  
Item  
Min.  
Typ.  
Max. Units  
Symbol  
Test Conditions  
Rth(ch-c)  
channel to case  
0.424  
°C/W  
Thermal resistance  
Rth(ch-a)  
channel to ambient  
50.0  
°C/W  
1
2SK3340-01  
FUJI POWER MOSFET  
Characteristics  
Safe operating area  
Allowable Power Dissipation  
PD=f(Tc)  
ID=f(VDS):Single Pulse,Tc=25°C  
400  
350  
300  
250  
200  
150  
100  
50  
t=  
102  
101  
100  
10-1  
1µs  
10µs  
D.C.  
100µs  
1ms  
10ms  
100ms  
t
t
D=  
T
T
0
100  
101  
102  
VDS [V]  
103  
0
25  
50  
75  
100  
125  
150  
°
Tc [ C]  
Typical Transfer Characteristic  
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C  
Typical Output Characteristics  
ID=f(VDS):80µs pulse test,Tch=25°C  
60  
50  
40  
30  
20  
10  
0
100  
10  
1
15V  
20V  
10V  
6.5V  
6.0V  
5.5V  
5.0V  
VGS=4.5V  
0.1  
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10  
12  
14  
VGS[V]  
VDS [V]  
Typical Drain-Source on-state Resistance  
RDS(on)=f(ID):80µs pulse test,Tch=25°C  
Typical Transconductance  
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C  
100  
10  
1
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
5.5V  
VGS=4.5V  
5.0V  
6.0V  
6.5V  
10V  
15V  
20V  
0.1  
0.1  
0
10  
20  
30  
40  
50  
60  
1
10  
100  
ID [A]  
ID [A]  
2
2SK3340-01  
FUJI POWER MOSFET  
Gate Threshold Voltage vs. Tch  
Drain-Source On-state Resistance  
RDS(on)=f(Tch):ID=11.5A,VGS=10V  
VGS(th)=f(Tch):VDS=VGS,ID=1mA  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
max.  
typ.  
min.  
max.  
typ.  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-50  
-25  
0
25  
50  
Tch [°C]  
75  
100  
125  
150  
Tch [  
°C]  
Typical Gate Charge Characteristics  
VGS=f(Qg):ID=23A,Tch=25°C  
Typical Capacitance  
C=f(VDS):VGS=0V,f=1MHz  
10-7  
25  
20  
15  
10  
5
10-8  
Ciss  
Vcc= 80V  
200V  
320V  
10-9  
Coss  
Crss  
10-10  
10-11  
10-2  
0
10-1  
100  
101  
102  
0
50  
100  
150  
200  
250  
300  
Qg [C]  
VDS [V]  
Typical Forward Characteristics of Reverse Diode  
IF=f(VSD):80µs pulse test,Tch=25°C  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=300V,VGS=10V,RG=10  
104  
100  
10  
1
103  
102  
101  
td(off)  
tf  
tr  
td(on)  
0.1  
10-1  
100  
101  
102  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
ID [A]  
VSD [V]  
3
2SK3340-01  
FUJI POWER MOSFET  
Transient Thermal impedance  
Zth(ch-c)=f(t) parameter:D=t/T  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=40V,I(AV)<=23A  
0
10  
600  
500  
400  
300  
200  
100  
0
0.5  
-1 0.2  
10  
0.1  
0.05  
0.02  
-2  
0.01  
10  
t
0
t
D=  
T
T
-3  
10  
-5  
10  
-4  
10  
-3  
10  
-2  
-1  
10  
0
10  
1
10  
10  
t [s]  
0
25  
50  
75  
100  
125  
150  
starting Tch [°C]  
4

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