2SK3341-01 [FUJI]
N-CHANNEL SILICON POWER MOS-FET; N沟道硅功率MOS -FET![2SK3341-01](http://pdffile.icpdf.com/pdf1/p00031/img/icpdf/2SK3341_162922_icpdf.jpg)
型号: | 2SK3341-01 |
厂家: | ![]() |
描述: | N-CHANNEL SILICON POWER MOS-FET |
文件: | 总4页 (文件大小:107K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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FUJI POWER MOS-FET
2SK3341-01
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
VDS
ID
Rating
900
±10
±40
±30
10
Unit
V
Equivalent circuit schematic
Continuous drain current
Pulsed drain current
A
Drain(D)
ID(puls]
VGS
IAR *2
EAV*1
PD
A
Gate-source voltage
V
Repetitive or non-repetitive
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
A
648
310
+150
mJ
W
°C
Gate(G)
Tch
Source(S)
Tstg
-55 to +150
<
*1 L=11.9mH, Vcc=90V *2 Tch=150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Item
Test Conditions
Symbol
V(BR)DSS
VGS(th)
Drain-source breakdown voltaget
Gate threshold voltage
ID=1mA
ID=1mA
VGS=0V
V
900
VDS=VGS
V
2.5
3.0
10
0.2
10
0.92
3.5
500
1.0
100
1.2
Tch=25°C
µA
mA
nA
VDS=900V
VGS=0V
Zero gate voltage drain current
IDSS
Tch=125°C
VGS=±30V
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
VDS=0V
IGSS
ID=5A VGS=10V
RDS(on)
gfs
Ω
S
3.5
7
2200
240
115
28
ID=5A VDS=25V
VDS=25V
3300
pF
Ciss
360
173
42
Output capacitance
VGS=0V
Coss
Crss
td(on)
tr
Reverse transfer capacitance
Turn-on time ton
f=1MHz
VCC=600V ID=10A
ns
70
105
330
135
180
54
VGS=10V
220
90
Turn-off time toff
td(off)
tf
RGS=10 Ω
120
36
nC
Total gate charge
Vcc=450V
QG
QGS
QGD
IAV
Gate-Source charge
Gete-Drain charge
ID=10A
40
60
VGS=10V
10
A
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
L=11.9mH Tch=25°C
1.00
1.50
V
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs
Tch=25°C
VSD
trr
Qrr
1.8
µs
µC
21.0
Thermalcharacteristics
Item
Min.
Typ.
Max. Units
Symbol
Test Conditions
Rth(ch-c)
channel to case
0.403
°C/W
Thermal resistance
Rth(ch-a)
channel to ambient
50.0
°C/W
1
2SK3341-01
FUJI POWER MOSFET
Characteristics
Safe operating area
Allowable Power Dissipation
PD=f(Tc)
ID=f(VDS):Single Pulse,Tc=25°C
102
101
100
10-1
400
350
300
250
200
150
100
50
t=
1µs
10µs
100µs
D.C.
1ms
10ms
t
t
100ms
D=
T
T
0
101
102
VDS [V]
103
0
25
50
75
100
125
150
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
Typical Output Characteristics
ID=f(VDS):80µs pulse test,Tch=25°C
22
20
18
16
14
12
10
8
10
20V
10V
7V
6.5V
6.0V
1
5.5V
5.0V
6
0.1
4
VGS=4.5V
2
0
0.01
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12 14 16 18 20 22 24 26
VDS [V]
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
Typical Transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
VGS=
4.5V
5.0V
5.5V
6.0V
10
6.5V
7V
10V
20V
1
0.1
0.1
1
10
0
5
10
15
20
25
ID [A]
ID [A]
2
2SK3341-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
VGS(th)=f(Tch):VDS=VGS,ID=1mA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
max.
typ.
min.
max.
typ.
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
°
Tch [ C]
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25°C
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10-7
25
20
15
10
5
10-8
Vcc= 180V
Ciss
450V
720V
10-9
Coss
Crss
10-10
0
10-11
10-2
10-1
100
101
102
0
50
100
150
200
250
Qg [C]
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω
103
102
101
100
10
1
td(off)
tf
tr
td(on)
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
10-1
100
101
VSD [V]
ID [A]
3
2SK3341-01
FUJI POWER MOSFET
Transient Thermal impedance
Zth(ch-c)=f(t) parameter:D=t/T
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=90V,I(AV)<=10A
0
10
800
700
600
500
400
300
200
100
0
0.5
0.2
0.1
-1
10
0.05
0.02
-2
10
0.01
t
0
t
D=
T
T
-3
10
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
10
10
t [s]
0
25
50
75
starting Tch [ C]
100
125
150
°
4
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