2SK3342_07 [TOSHIBA]
Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications; 硅N沟道MOS型开关稳压器和DC- DC转换器应用电机驱动应用
| 型号： | 2SK3342_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 文件： | 总6页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3342
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3342
Unit: mm
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
z Low drain-source ON resistance
z High forward transfer admittance
: R
= 0.8 Ω (typ.)
DS (ON)
: |Y | = 4.5 S (typ.)
fs
z Low leakage current
z Enhancement mode
: I
= 100 μA (max) (V
= 250 V)
DSS
DS
: V = 1.5~3.5 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
250
250
±20
4.5
18
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
V
GSS
DC (Note 1)
Pulse (Note 1)
I
A
D
Drain current
I
A
DP
JEDEC
JEITA
―
Drain power dissipation (Tc = 25°C)
P
20
W
D
AS
AR
SC-64
2-7B1B
Single pulse avalanche energy
E
51
mJ
TOSHIBA
(Note 2)
Avalanche current
I
4.5
2.0
A
Weight: 0.36 g (typ.)
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
ch
150
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
6.25
125
Unit
JEDEC
JEITA
―
―
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch−c)
th (ch−a)
Thermal resistance, channel to
ambient
R
TOSHIBA
2-7J1B
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 50 V, T = 25°C (initial), L = 4.28 mH, R = 25 Ω,
Weight: 0.36 g (typ.)
V
DD
ch
G
I
= 4.5 A
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2007-01-16
2SK3342
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
V
V
= ±16 V, V = 0 V
—
—
—
—
±10
100
—
μA
μA
V
GSS
GS
DS
DS
Drain cut−off current
I
= 250 V, V
= 0 V
DSS
(BR) DSS
GS
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
250
1.5
—
—
D
GS
V
V
V
V
= 10 V, I = 1 mA
—
3.5
1.0
—
V
th
DS
GS
DS
D
R
= 10 V, I = 2.5 A
0.8
4.5
440
35
Ω
DS (ON)
|Y |
D
= 10 V, I = 2.5 A
2.0
—
S
fs
D
C
C
—
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
120
—
oss
Rise time
tr
—
—
—
15
20
15
—
—
—
Turn−on time
Switching time
t
on
ns
Fall time
t
f
Turn−off time
t
—
—
60
10
—
—
off
Total gate charge (Gate−source
plus gate−drain)
Q
g
V
≈ 100 V, V
= 10 V, I = 4.5 A
nC
DD
GS
D
Gate−source charge
Q
—
—
6
4
—
—
gs
Gate−drain (“miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
—
Typ.
—
Max
4.5
18
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 4.5 A, V
= 4.5 A, V
= 0 V
= 0 V
—
—
—
—
−2.0
—
V
DSF
DR
DR
GS
GS
t
110
0.47
ns
μC
rr
dI
/ dt = 100 A / μs
DR
Q
—
rr
Marking
K3342
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2007-01-16
2SK3342
I
– V
I
– V
D
DS
D
DS
10
10
8
10
8
Common source
Tc = 25°C
Pulse Test
Common source
Tc = 25°C
Pulse Test
15
8
15
5.5
5
5.5
10
8
6
4
2
0
6
4
2
0
5
4.5
4.5
V
8
= 4V
GS
V
= 4V
GS
10
0
20
30
0
2
4
6
10
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
8
6
10
8
Common source
Tc = 25°C
Pulse Test
Common source
= 10 V
V
DS
Pulse Test
6
4
2
I
= 4.5 A
D
4
2
2
1
100
25
Ta = −55°C
0
0
0
2
4
6
8
10
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y | – I
fs
R
– I
DS (ON) D
D
10
10
Common source
= 10 V
Ta = −55°C
V
DS
Pulse Test
100
25
15
1
1
V
= 10 V
GS
0.1
0.1
0.1
0.1
1
10
1
10
Drain current
I
(A)
Drain current
I
(A)
D
D
3
2007-01-16
2SK3342
R
− Tc
I
− V
DS
DS (ON)
DR
3.0
100
Common source
= 10 V
Common source
Tc = 25°C
Pulse Test
V
DS
Pulse Test
2.5
2.0
1.5
1.0
10
I
= 4.5A
D
2
1
10
5
1
3
0.5
0
−1
V
= 0V
GS
0.1
−100
−50
0
50
100
150
200
0
0.5
1.0
1.5
2.0
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
DS
V
− Tc
th
1000
5
Common source
= 10 V
V
DS
= 1mA
500
300
C
iss
I
D
4
3
Pulse Test
C
oss
100
2
50
30
C
rss
Common source
= 0 V
1
0
V
GS
f = 1MH
Z
Tc = 25°C
10
0.1
0.3 0.5
1
3
5
30
10
−100
−50
0
50
100
150
200
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
Dynamic input / output
characteristics
P
− Tc
D
40
30
250
25
20
15
Common source
= 4.5 A
Tc = 25°C
I
D
V
DS
200
150
100
Pulse Test
50V
V
= 200V
DD
20
10
0
100V
10
50
0
5
0
V
GS
0
40
80
120
160
200
0
5
10
15
20
Total gate charge
Q
(nC)
Case temperature Tc (°C)
g
4
2007-01-16
2SK3342
Safe operating area
E
AS
– T
ch
100
10
80
60
I
max (pulsed) *
D
100 μs *
I
max (continuous)
D
1 ms *
40
20
1
*: Single nonrepetitive pulse
Tc = 25°C
0.1
Curves must be derated
linearly with increase in
temperature.
0
25
V
max
DSS
0.01
50
75
100
125
150
1
10
100
1000
Channel temperature (initial) Tch (°C)
Drain-source voltage
V
DS
(V)
B
VDSS
15 V
−15 V
I
AR
V
V
DD
DS
B
Test circuit
Waveform
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
=25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
50 V, L = 4.28mH
B
VDSS
DD =
5
2007-01-16
2SK3342
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2007-01-16
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