2SK3348 [RENESAS]

Silicon N Channel MOS FET High Speed Switching; 硅N沟道MOS场效应管高速开关
2SK3348
型号: 2SK3348
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Silicon N Channel MOS FET High Speed Switching
硅N沟道MOS场效应管高速开关

开关
文件: 总10页 (文件大小:158K)
中文:  中文翻译
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Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to tents of the document, and  
these changes do not constitute any alteration to the contents nt itself.  
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April 1, 2003  
Cautions  
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2SK3348  
Silicon N Channel MOS FET  
High Speed Switching  
ADE-208-772 A (Z)  
2nd.Edition.  
June 1999  
Features  
Low on-resistance  
RDS = 1.6 typ. (VGS = 4 V , ID = 50 mA)  
RDS = 2.2 typ. (VGS = 2.5 V , ID = 50 mA)  
2.5 V gate drive device.  
Small package (CMPAK)  
Outline  
CMPAK  
1
2
G
1. Source  
2. Gate  
3. Drain  
S
2SK3348  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
VDSS  
Ratings  
20  
Unit  
V
Drain to source voltage  
Gate to source voltage  
Drain current  
VGSS  
ID  
±10  
V
100  
mA  
mA  
mA  
mW  
°C  
Note1  
Drain peak current  
ID(pulse)  
400  
Body-drain diode reverse drain current IDR  
100  
Channel dissipation  
Pch Note 2  
300  
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
–55 to +150  
°C  
Note: 1. PW 10 µs, duty cycle 1%  
2. Value on the alumina ceramic board (12.5x20x0.7mm)  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Ty
Test Conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
20  
ID = 100 µA, VGS = 0  
Gate to source breakdown  
voltage  
V(BR)GSS  
±1
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
IGSS  
ID
±5  
µA  
µA  
VGS = ±8 V, VDS = 0  
Zero gate voltege drain  
current  
1
VDS = 20 V, VGS = 0  
Gate to source cutoff volta
Static drain to source on s
143  
1.8  
1.9  
3.2  
V
ID = 10µA, VDS = 5 V  
ID = 50 mA,VGS = 4 V Note 3  
ID = 50 mA,VGS = 2.5 V Note 3  
ID = 50 mA, VDS = 10 V Note 3  
VDS = 10 V  
1.6  
2.2  
220  
18  
resistance  
Forward transfer admittance |yfs
mS  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Input capacitance  
Output capacitance  
Ciss  
Coss  
15  
VGS = 0  
Reverse transfer capacitance Crss  
5
f = 1 MHz  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
73  
ID = 50 mA, VGS = 4 V  
RL = 200Ω  
290  
360  
360  
Turn-off delay time  
Fall time  
Note: 3. Pulse test  
4. Marking is CN  
2
2SK3348  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
400  
300  
200  
100  
5
10 µs  
100 µs  
1 ms  
2
1.0  
0.5  
PW = 10 ms  
(1 shot)  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
Operation in this area  
is limited by RDS(on)  
0.002  
0.001  
Ta = 25 °C  
0.0005  
0
0.05  
2
5
20  
10  
0.1 0.2 .0  
50  
50  
Ambient Temperature Ta ( °C)  
*Value on the alumina ceramic boad.(12.5x20x0.7mm)  
100  
150  
200  
Drain ltage  
V
(V)  
DS  
Value on ad.(12.5x20x0.7mm)  
Typical Output Characteristics  
10 V  
1.0  
Transfer Characteristics  
8 V  
6 V  
5 V  
Pulse Test  
= 10 V  
S  
ulse Test  
0.8  
0.6  
0.4  
0.2  
0.3  
0.2  
0.1  
V
= 4 V  
GS  
3 V  
Tc = –25 °C  
25 °C  
2
1 V  
75 °C  
1
0
0
2
4
6
8
10  
2
3
4
5
Drain to Source Voltage  
V
(V)  
Gate to Source Voltage  
V
(V)  
DS  
GS  
3
2SK3348  
Static Drain to Source on State  
Resistance vs. Drain Current  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
10  
5
1.0  
0.8  
0.6  
0.4  
0.2  
Pulse Test  
Pulse Test  
V
= 2.5 V  
GS  
10 mA  
50 mA  
2
4 V  
1.0  
0.5  
I
= 100 mA  
D
0.2  
0.1  
0.02 0.05  
0.2  
6
0.01  
0.1  
0.5 1.0  
0
2
4
8
10  
Gate to Source Voltage  
V
(V)  
Drain Current  
I
(A)  
GS  
D
Static Drain to Source on State  
Resistance vs. Temperature  
ransfer Admittance  
s. Drain Current  
5
4
3
2
1
= 10 V  
lse Test  
Tc = –25 °C  
0.1  
75°C  
100m A  
25 °C  
0.05  
V
GS  
=2.5V  
0.02  
0.01  
0.005  
4V  
10
t  
0.002  
0.001  
0
–40  
0.05  
0.2  
0.1  
0.01 0.02  
0.5 1.0  
0
40  
8
0  
160  
Case Temperature Tc ( °C)  
Drain Current  
I
(A)  
D
4
2SK3348  
Typical Capacitance  
vs. Drain to Source Voltage  
Switching Characteristics  
= 4 V, V = 10 V  
100  
50  
1000  
V
= 0  
V
GS  
f = 1 MHz  
GS  
PW = 5 µs, duty < 1%  
DS  
t
f
Coss  
t
r
Ciss  
20  
10  
5
t
d(off)  
100  
10  
Crss  
t
d(on)  
2
1
0.01  
0
4
8
12  
16  
20  
0.1  
1.0  
Drain Current  
I
(A)  
D
Drain to Source Voltage  
V
(V)  
DS  
Reverse Drain Current vs.  
Source to Drain Voltage  
0.5  
0.4  
0.3  
0.2  
0.1  
Pulse Test  
V
= 2.5 V  
GS  
–2.5 V  
0
0.2  
0.4  
0.6  
.0.8  
1
Source to Drain Voltage  
V
SD  
(V)  
5
2SK3348  
Switching Time Test Circuit  
Waveforms  
Vout  
Monitor  
Vin Monitor  
90%  
D.U.T.  
R
L
10%  
10%  
90%  
Vin  
V
DD  
Vin  
10 V  
Vout  
10%  
50  
= 10 V  
90%  
td(off)  
td(on)  
t
f
tr  
6
2SK3348  
Package Dimensions  
As of January, 2001  
Unit: mm  
2.0 ± 0.2  
+ 0.1  
+ 0.1  
0.16  
0.3  
0.3  
– 0.06  
– 0.05  
0 – 0.1  
+ 0.1  
– 0.05  
+ 0.1  
– 0.05  
0.3  
0.65  
0.65  
1.3 ± 0.2  
e  
CMPAK  
Conforms  
0.006 g  
ss (reference value)  
7
2SK3348  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiatioracteristics, installation  
conditions and other characteristics. Hitachi bears no responsilure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ormally foreseeable  
failure rates or failure modes in semiconductor devices aeasures such as fail-  
safes, so that the equipment incorporating Hitachi prdily injury, fire or other  
consequential damage due to operation of the Hita
5. This product is not designed to be radiation re
6. No one is permitted to reproduce or duplichole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for athis document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
8

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