2SK3348 [RENESAS]
Silicon N Channel MOS FET High Speed Switching; 硅N沟道MOS场效应管高速开关
| 型号： | 2SK3348 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon N Channel MOS FET High Speed Switching |
| 文件： | 总10页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to tents of the document, and
these changes do not constitute any alteration to the contents nt itself.
Renesas Technology Home Pa.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any r infringement of any
third-party's rights, originating in the use of any product data, diaograms, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including prorograms and
algorithms represents information on products at the timerials, and are
subject to change by Renesas Technology Corporatiuct improvements or
other reasons. It is therefore recommended that echnology Corporation
or an authorized Renesas Technology Corporae latest product information
before purchasing a product listed herein.
The information described here may contypographical errors.
Renesas Technology Corporation assy damage, liability, or other loss
rising from these inaccuracies or e
Please also pay attention to infos Technology Corporation by various
means, including the Renesamiconductor home page
(http://www.renesas.com)
4. When using any or all in these materials, including product data, diagrams,
charts, programs, ato evaluate all information as a total system before
making a final df the information and products. Renesas Technology
Corporation aany damage, liability or other loss resulting from the
information con
5. Renesas Technologmiconductors are not designed or manufactured for use in a device
or system that is used mstances in which human life is potentially at stake. Please contact
Renesas Technology Cortion or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
2SK3348
Silicon N Channel MOS FET
High Speed Switching
ADE-208-772 A (Z)
2nd.Edition.
June 1999
Features
•
Low on-resistance
RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA)
RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA)
2.5 V gate drive device.
•
•
Small package (CMPAK)
Outline
CMPAK
1
2
G
1. Source
2. Gate
3. Drain
S
2SK3348
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
20
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
±10
V
100
mA
mA
mA
mW
°C
Note1
Drain peak current
ID(pulse)
400
Body-drain diode reverse drain current IDR
100
Channel dissipation
Pch Note 2
300
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
°C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Ty
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
20
ID = 100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±1
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
ID
±5
µA
µA
VGS = ±8 V, VDS = 0
Zero gate voltege drain
current
1
VDS = 20 V, VGS = 0
Gate to source cutoff volta
Static drain to source on s
—
143
—
—
—
—
—
—
—
—
1.8
1.9
3.2
—
V
ID = 10µA, VDS = 5 V
ID = 50 mA,VGS = 4 V Note 3
ID = 50 mA,VGS = 2.5 V Note 3
ID = 50 mA, VDS = 10 V Note 3
VDS = 10 V
1.6
2.2
220
18
Ω
resistance
Ω
Forward transfer admittance |yfs
mS
pF
pF
pF
ns
ns
ns
ns
Input capacitance
Output capacitance
Ciss
—
Coss
15
—
VGS = 0
Reverse transfer capacitance Crss
5
—
f = 1 MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
73
—
ID = 50 mA, VGS = 4 V
RL = 200Ω
290
360
360
—
Turn-off delay time
Fall time
—
—
Note: 3. Pulse test
4. Marking is CN
2SK3348
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
400
300
200
100
5
10 µs
100 µs
1 ms
2
1.0
0.5
PW = 10 ms
(1 shot)
0.2
0.1
0.05
0.02
0.01
0.005
Operation in this area
is limited by RDS(on)
0.002
0.001
Ta = 25 °C
0.0005
0
0.05
2
5
20
10
0.1 0.2 .0
50
50
Ambient Temperature Ta ( °C)
*Value on the alumina ceramic boad.(12.5x20x0.7mm)
100
150
200
Drain ltage
V
(V)
DS
Value on ad.(12.5x20x0.7mm)
Typical Output Characteristics
10 V
1.0
Transfer Characteristics
8 V
6 V
5 V
Pulse Test
= 10 V
S
ulse Test
0.8
0.6
0.4
0.2
0.3
0.2
0.1
V
= 4 V
GS
3 V
Tc = –25 °C
25 °C
2
1 V
75 °C
1
0
0
2
4
6
8
10
2
3
4
5
Drain to Source Voltage
V
(V)
Gate to Source Voltage
V
(V)
DS
GS
2SK3348
Static Drain to Source on State
Resistance vs. Drain Current
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
5
1.0
0.8
0.6
0.4
0.2
Pulse Test
Pulse Test
V
= 2.5 V
GS
10 mA
50 mA
2
4 V
1.0
0.5
I
= 100 mA
D
0.2
0.1
0.02 0.05
0.2
6
0.01
0.1
0.5 1.0
0
2
4
8
10
Gate to Source Voltage
V
(V)
Drain Current
I
(A)
GS
D
Static Drain to Source on State
Resistance vs. Temperature
ransfer Admittance
s. Drain Current
5
4
3
2
1
= 10 V
lse Test
Tc = –25 °C
0.1
75°C
100m A
25 °C
0.05
V
GS
=2.5V
0.02
0.01
0.005
4V
10
t
0.002
0.001
0
–40
0.05
0.2
0.1
0.01 0.02
0.5 1.0
0
40
8
0
160
Case Temperature Tc ( °C)
Drain Current
I
(A)
D
2SK3348
Typical Capacitance
vs. Drain to Source Voltage
Switching Characteristics
= 4 V, V = 10 V
100
50
1000
V
= 0
V
GS
f = 1 MHz
GS
PW = 5 µs, duty < 1%
DS
t
f
Coss
t
r
Ciss
20
10
5
t
d(off)
100
10
Crss
t
d(on)
2
1
0.01
0
4
8
12
16
20
0.1
1.0
Drain Current
I
(A)
D
Drain to Source Voltage
V
(V)
DS
Reverse Drain Current vs.
Source to Drain Voltage
0.5
0.4
0.3
0.2
0.1
Pulse Test
V
= 2.5 V
GS
–2.5 V
0
0.2
0.4
0.6
.0.8
1
Source to Drain Voltage
V
SD
(V)
2SK3348
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50
= 10 V
90%
td(off)
td(on)
t
f
tr
2SK3348
Package Dimensions
As of January, 2001
Unit: mm
2.0 ± 0.2
+ 0.1
+ 0.1
0.16
0.3
0.3
– 0.06
– 0.05
0 – 0.1
+ 0.1
– 0.05
+ 0.1
– 0.05
0.3
0.65
0.65
1.3 ± 0.2
e
CMPAK
—
Conforms
0.006 g
ss (reference value)
2SK3348
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiatioracteristics, installation
conditions and other characteristics. Hitachi bears no responsilure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ormally foreseeable
failure rates or failure modes in semiconductor devices aeasures such as fail-
safes, so that the equipment incorporating Hitachi prdily injury, fire or other
consequential damage due to operation of the Hita
5. This product is not designed to be radiation re
6. No one is permitted to reproduce or duplichole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for athis document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
相关型号：
©2020 ICPDF网 联系我们和版权申明