2SK3348 [HITACHI]
Silicon N Channel MOS FET High Speed Switching; 硅N沟道MOS场效应管高速开关
| 型号： | 2SK3348 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon N Channel MOS FET High Speed Switching |
| 文件： | 总8页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3348
Silicon N Channel MOS FET
High Speed Switching
ADE-208-772 A (Z)
2nd.Edition.
June 1999
Features
•
Low on-resistance
RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA)
RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA)
2.5 V gate drive device.
•
•
Small package (CMPAK)
Outline
CMPAK
3
1
D
2
G
1. Source
2. Gate
3. Drain
S
2SK3348
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
20
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
ID
±10
V
100
mA
mA
mA
mW
°C
Note1
Drain peak current
ID(pulse)
400
Body-drain diode reverse drain current IDR
100
Channel dissipation
Pch Note 2
300
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
°C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
20
—
—
V
ID = 100 µA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±10
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
IDSS
—
—
—
—
±5
µA
µA
VGS = ±8 V, VDS = 0
Zero gate voltege drain
current
1
VDS = 20 V, VGS = 0
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
0.8
—
—
143
—
—
—
—
—
—
—
—
1.8
1.9
3.2
—
V
ID = 10µA, VDS = 5 V
ID = 50 mA,VGS = 4 V Note 3
ID = 50 mA,VGS = 2.5 V Note 3
ID = 50 mA, VDS = 10 V Note 3
VDS = 10 V
1.6
2.2
220
18
Ω
resistance
RDS(on)
Ω
Forward transfer admittance |yfs|
mS
pF
pF
pF
ns
ns
ns
ns
Input capacitance
Output capacitance
Ciss
—
Coss
15
—
VGS = 0
Reverse transfer capacitance Crss
5
—
f = 1 MHz
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
73
—
ID = 50 mA, VGS = 4 V
RL = 200Ω
290
360
360
—
Turn-off delay time
Fall time
—
—
Note: 3. Pulse test
4. Marking is CN
2
2SK3348
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
400
300
200
100
5
10 µs
100 µs
1 ms
2
1.0
0.5
PW = 10 ms
(1 shot)
0.2
0.1
0.05
0.02
0.01
0.005
Operation in this area
is limited by RDS(on)
0.002
0.001
Ta = 25 °C
0.0005
0
0.05
2
5
20
10
0.1 0.2 0.5 1.0
50
50
Ambient Temperature Ta ( °C)
*Value on the alumina ceramic boad.(12.5x20x0.7mm)
100
150
200
Drain to Source Voltage
V
(V)
DS
Value on the alumina ceramic boad.(12.5x20x0.7mm)
Typical Output Characteristics
10 V
1.0
Typical Transfer Characteristics
0.5
8 V
6 V
5 V
Pulse Test
V
= 10 V
DS
Pulse Test
0.8
0.6
0.4
0.2
0.4
0.3
0.2
0.1
V
GS
= 4 V
3 V
Tc = –25 °C
25 °C
2 V
1 V
75 °C
1
0
0
2
4
6
8
10
2
3
4
5
Drain to Source Voltage
V
(V)
Gate to Source Voltage
V
(V)
DS
GS
3
2SK3348
Static Drain to Source on State
Resistance vs. Drain Current
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
5
1.0
0.8
0.6
0.4
0.2
Pulse Test
Pulse Test
V
GS
= 2.5 V
10 mA
50 mA
2
4 V
1.0
0.5
I
= 100 mA
D
0.2
0.1
0.02 0.05
0.2
6
0.01
0.1
0.5 1.0
0
2
4
8
10
Gate to Source Voltage
V
(V)
Drain Current
I
(A)
GS
D
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
1.0
0.5
5
4
3
2
1
V
= 10 V
DS
Pulse Test
Tc = –25 °C
0.2
0.1
75°C
100m A
I
D = -50m A
25 °C
0.05
V
GS
=2.5V
-10m A
0.02
0.01
0.005
4V
10m A,50m A,100mA
Pulse Test
0.002
0.001
0
–40
0.05
0.2
0.1
0.01 0.02
0.5 1.0
0
40
80
120
160
Case Temperature Tc ( °C)
Drain Current
I
(A)
D
4
2SK3348
Typical Capacitance
vs. Drain to Source Voltage
Switching Characteristics
= 4 V, V = 10 V
100
50
1000
V
= 0
V
GS
f = 1 MHz
GS
PW = 5 µs, duty < 1%
DS
t
f
Coss
t
r
Ciss
20
10
5
t
d(off)
100
10
Crss
t
d(on)
2
1
0.01
0
4
8
12
16
20
0.1
1.0
Drain Current
I
(A)
D
Drain to Source Voltage
V
(V)
DS
Reverse Drain Current vs.
Source to Drain Voltage
0.5
0.4
0.3
0.2
0.1
Pulse Test
0 V
V
= 2.5 V
GS
–2.5 V
0
0.2
0.4
0.6
.0.8
1
Source to Drain Voltage
V
SD
(V)
5
2SK3348
Switching Time Test Circuit
Waveforms
Vout
Monitor
Vin Monitor
90%
D.U.T.
R
L
10%
10%
90%
Vin
V
DD
Vin
10 V
Vout
10%
50
= 10 V
90%
td(off)
td(on)
t
f
tr
6
2SK3348
Package Dimensions
Unit: mm
+ 0.10
– 0.06
+ 0.10
– 0.05
0.16
0.3
0 ~ 0.1
+ 0.1
– 0.05
0.3
+ 0.1
– 0.0.5
0.3
0.65
0.65
1.3
+ 0.2
– 0.2
+ 0.2
– 0.2
2.0
CMPAK
SC–70
–
Hitachi Code
EIAJ
JEDEC
7
2SK3348
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
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Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
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For further information write to:
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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