2SK3342(TE16L1,Q) [TOSHIBA]
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4.5A I(D),TO-252VAR;型号: | 2SK3342(TE16L1,Q) |
厂家: | TOSHIBA |
描述: | TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,4.5A I(D),TO-252VAR |
文件: | 总6页 (文件大小:231K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3342
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3342
Unit: mm
Switching Regulator and DC-DC Converter Applications
6.5 ± 0.2
5.2 ± 0.2
Motor Drive Applications
0.6 MAX.
z Low drain-source ON resistance
z High forward transfer admittance
: R
= 0.8 Ω (typ.)
DS (ON)
: |Y | = 4.5 S (typ.)
fs
z Low leakage current
z Enhancement mode
: I
= 100 μA (max) (V
= 250 V)
DSS
DS
1.1 ± 0. 2
: V = 1.5 to 3.5 V (V
= 10 V, I = 1 mA)
D
th
DS
0.8 MAX.
0.6 MAX.
1.05 MAX.
2 3
0.6 ± 0.15
Absolute Maximum Ratings (Ta = 25°C)
1
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
250
250
±20
4.5
18
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
2
2.3 ± 0.15 2.3 ± 0.15
V
V
1. GATE
GSS
1
2. DRAIN
DC (Note 1)
Pulse (Note 1)
I
A
(HEAT SINK)
D
3
Drain current
3. SOURSE
I
A
DP
Drain power dissipation (Tc = 25°C)
P
20
W
D
AS
AR
JEDEC
—
—
Single pulse avalanche energy
E
51
mJ
JEITA
(Note 2)
Avalanche current
I
4.5
2.0
A
TOSHIBA
2-7J1B
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.36 g (typ.)
T
ch
150
Storage temperature range
T
−55 to 150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
6.25
125
°C / W
°C / W
th (ch−c)
R
th (ch−a)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 50 V, T = 25°C (initial), L = 4.28 mH, R = 25 Ω,
V
DD
ch
G
I
= 4.5 A
AR
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2010-02-05
2SK3342
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
V
V
= ±16 V, V = 0 V
—
—
—
—
±10
100
—
μA
μA
V
GSS
GS
DS
DS
Drain cut−off current
I
= 250 V, V
= 0 V
DSS
(BR) DSS
GS
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
V
I
= 10 mA, V
= 0 V
250
1.5
—
—
D
GS
V
V
V
V
= 10 V, I = 1 mA
—
3.5
1.0
—
V
th
DS
GS
DS
D
R
= 10 V, I = 2.5 A
0.8
4.5
440
35
Ω
DS (ON)
|Y |
D
= 10 V, I = 2.5 A
2.0
—
S
fs
D
C
C
—
iss
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
—
—
DS
rss
C
—
120
—
oss
Rise time
tr
—
—
—
15
20
15
—
—
—
Turn−on time
Switching time
t
on
ns
Fall time
t
f
Turn−off time
t
—
—
60
10
—
—
off
Total gate charge (Gate−source
plus gate−drain)
Q
g
V
≈ 200 V, V
= 10 V, I = 4.5 A
nC
DD
GS
D
Gate−source charge
Q
—
—
6
4
—
—
gs
Gate−drain (“miller”) charge
Q
gd
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
—
Typ.
—
Max
4.5
18
Unit
A
Continuous drain reverse current
(Note 1)
I
—
—
DR
Pulse drain reverse current
(Note 1)
I
—
—
A
DRP
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
V
I
I
= 4.5 A, V
= 4.5 A, V
= 0 V
—
—
—
—
−2.0
—
V
DSF
DR
DR
GS
GS
t
110
0.47
ns
μC
rr
= 0 V,
dI
/ dt = 100 A / μs
DR
Q
—
rr
Marking
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
K3342
Part No.
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
(or abbreviation code)
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic
equipment.
Lot No.
Note 4
2
2010-02-05
2SK3342
I
– V
I
– V
D
DS
D
DS
10
10
8
10
8
Common source
Tc = 25°C
Pulse Test
Common source
Tc = 25°C
Pulse Test
15
8
15
5.5
5
5.5
10
8
6
4
2
0
6
4
2
0
5
4.5
4.5
V
8
= 4V
GS
V
= 4V
GS
10
0
20
30
0
2
4
6
10
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
8
6
10
8
Common source
Tc = 25°C
Pulse Test
Common source
= 10 V
V
DS
Pulse Test
6
4
2
I
= 4.5 A
D
4
2
2
1
100
25
Ta = −55°C
0
0
0
2
4
6
8
10
0
4
8
12
16
20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
|Y | – I
fs
R
– I
DS (ON) D
D
10
10
Common source
= 10 V
Ta = −55°C
V
DS
Pulse Test
100
25
V = 10 V
GS
1
1
15
0.1
0.1
0.1
0.1
1
10
1
10
Drain current
I
(A)
Drain current
I
(A)
D
D
3
2010-02-05
2SK3342
I
− V
R
− Tc
DR
DS
DS (ON)
3.0
100
Common source
Tc = 25°C
Pulse Test
Common source
= 10 V
V
DS
Pulse Test
2.5
2.0
1.5
1.0
10
I
= 4.5A
D
2
1
10
5
1
3
0.5
0
−1
V
= 0V
GS
0.1
0
0.5
1.0
1.5
2.0
−100
−50
0
50
100
150
200
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
Capacitance – V
DS
V
− Tc
th
1000
5
Common source
= 10 V
V
DS
= 1mA
500
300
C
iss
I
D
4
3
Pulse Test
C
oss
100
2
50
30
C
rss
Common source
= 0 V
1
0
V
GS
f = 1MH
Z
Tc = 25°C
10
0.1
0.3 0.5
1
3
5
30
10
−100
−50
0
50
100
150
200
Drain-source voltage
V
DS
(V)
Case temperature Tc (°C)
Dynamic input / output
characteristics
P
− Tc
D
40
30
250
25
Common source
I
= 4.5 A
D
V
DS
Tc = 25°C
Pulse Test
200
150
100
20
15
10
50V
V
= 200V
DD
20
10
0
100V
50
0
5
0
V
GS
0
40
80
120
160
200
0
5
10
15
20
Total gate charge
Q
(nC)
Case temperature Tc (°C)
g
4
2010-02-05
2SK3342
Safe operating area
E
AS
– T
ch
100
10
80
60
I
max (pulsed) *
D
100 μs *
I
max (continuous)
D
1 ms *
40
20
1
*: Single nonrepetitive pulse
Tc = 25°C
0.1
Curves must be derated
linearly with increase in
temperature.
0
25
V
max
DSS
0.01
50
75
100
125
150
1
10
100
1000
Channel temperature (initial) Tch (°C)
Drain-source voltage
V
DS
(V)
B
VDSS
15 V
−15 V
I
AR
V
V
DD
DS
B
Test circuit
Waveform
⎛
⎜
⎜
⎝
⎞
⎟
⎟
⎠
1
2
2
R
V
=25 Ω
VDSS
G
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
50 V, L = 4.28mH
B
VDSS
DD =
5
2010-02-05
2SK3342
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
6
2010-02-05
相关型号:
2SK3342_07
Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA
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