MRF9060 [FREESCALE]
RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs; 射频功率场效应晶体管N沟道增强模式横向的MOSFET
| 型号： | MRF9060 |
| 厂家： | 
Freescale |
| 描述： | RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs |
| 文件： | 总12页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MRF9060
Rev. 8, 12/2004
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N−Channel Enhancement−Mode Lateral MOSFETs
MRF9060LR1
MRF9060LSR1
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large−signal, common−source amplifier applica-
tions in 26 volt base station equipment.
• Typical Two−Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
945 MHz, 60 W, 26 V
LATERAL N−CHANNEL
BROADBAND
Efficiency — 40%
IMD — −31 dBc
• Integrated ESD Protection
RF POWER MOSFETs
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large−Signal Impedance Parameters
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
CASE 360B−05, STYLE 1
NI−360
MRF9060LR1
CASE 360C−05, STYLE 1
NI−360S
MRF9060LSR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain−Source Voltage
Gate−Source Voltage
V
−0.5, +65
−0.5, +15
Vdc
Vdc
DSS
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
MRF9060LR1
P
D
159
0.91
219
W
W/°C
W
C
MRF9060LSR1
1.25
W/°C
Storage Temperature Range
T
−65 to +150
°C
°C
stg
Operating Junction Temperature
T
200
J
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
MRF9060LR1
MRF9060LSR1
R
1.1
0.8
°C/W
θ
JC
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
M1 (Minimum)
Machine Model
NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2004. All rights reserved.
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V = 65 Vdc, V = 0 Vdc)
I
I
—
—
—
—
—
—
10
1
µAdc
µAdc
µAdc
DSS
DSS
GSS
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 26 Vdc, V = 0 Vdc)
DS
GS
Gate−Source Leakage Current
I
1
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 200 µAdc)
V
V
2
2.9
3.7
4
Vdc
Vdc
Vdc
S
GS(th)
GS(Q)
DS(on)
DS
D
Gate Quiescent Voltage
(V = 26 Vdc, I = 450 mAdc)
—
—
—
—
0.4
—
DS
D
Drain−Source On−Voltage
(V = 10 Vdc, I = 1.3 Adc)
V
0.17
5.3
GS
D
Forward Transconductance
(V = 10 Vdc, I = 4 Adc)
g
fs
DS
D
Dynamic Characteristics
Input Capacitance
(V = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
—
—
—
98
50
2
—
—
—
pF
pF
iss
GS
Output Capacitance
(V = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Reverse Transfer Capacitance
C
pF
rss
(V = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(continued)
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5−2
Table 4. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two−Tone Common−Source Amplifier Power Gain
G
16
17
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two−Tone Drain Efficiency
η
36
—
—
—
40
−31
−16
17
—
−28
−9
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
IMD
IRL
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two−Tone Common−Source Amplifier Power Gain
G
—
dB
ps
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Two−Tone Drain Efficiency
η
—
—
—
39
—
—
—
%
dBc
dB
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
3rd Order Intermodulation Distortion
IMD
IRL
−31
−16
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Input Return Loss
(V = 26 Vdc, P = 60 W PEP, I = 450 mA,
DD
out
DQ
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Power Output, 1 dB Compression Point
P
—
—
—
70
17
51
—
—
—
W
dB
%
1dB
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz)
Common−Source Amplifier Power Gain
G
ps
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz)
Drain Efficiency
η
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
DD
out
DQ
f1 = 945.0 MHz)
Output Mismatch Stress
(V = 26 Vdc, P = 60 W CW, I = 450 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Ψ
DD
out
DQ
No Degradation In Output Power
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5−3
ꢔ ꢊ
ꢔ ꢕ
ꢈꢊ ꢒ
ꢍ
ꢑ ꢑ
ꢍ
ꢎ ꢎ
ꢐ
ꢐ
ꢐ
ꢐ
ꢈ ꢉ
ꢋ ꢊ
ꢈ ꢏ
ꢈꢊ ꢌ
ꢈꢊ ꢉ
ꢈ ꢊꢏ
ꢖꢊ
ꢖ
ꢕ
ꢈꢓ
ꢈꢘ
ꢋꢊꢊ ꢋꢊ ꢕ
ꢀ ꢁ
ꢇ ꢅ ꢆꢄꢅ ꢆ
ꢀ ꢁ
ꢂꢃ ꢄꢅ ꢆ
ꢋꢊ ꢗ
ꢋꢊ ꢒ
ꢋꢊ ꢓ
ꢋꢊ ꢌ
ꢈꢊꢊ
ꢋꢊ ꢉ
ꢈꢊ ꢕ
ꢋꢊ ꢏ
ꢋꢕ ꢋꢒ
ꢋꢓ
ꢋꢌ ꢋꢉ
ꢋꢏ
ꢈꢒ
ꢋꢙ
ꢋꢘ
ꢈꢊ ꢓ
ꢎꢅ ꢆ
ꢈ ꢊ
ꢈꢙ
ꢈꢊ ꢗ
ꢈꢕ
ꢈꢌ
Z1
0.240″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.180″ x 0.270″ Microstrip
0.350″ x 0.270″ Microstrip
0.270″ x 0.520 x 0.140″ Taper
0.170″ x 0.520″ Microstrip
0.410″ x 0.520″ Microstrip
0.060″ x 0.520″ Microstrip
Z10
0.360″ x 0.270″ Microstrip
0.060″ x 0.270″ Microstrip
0.110″ x 0.060″ Microstrip
0.330″ x 0.060″ Microstrip
0.230″ x 0.060″ Microstrip
0.740″ x 0.060″ Microstrip
0.130″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
Taconic RF−35−0300, 30 mil, ε = 3.55
r
Figure 1. 945 MHz Broadband Test Circuit Schematic
Table 5. 945 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
B2
Short Ferrite Bead
Long Ferrite Bead
95F786
95F787
Newark
Newark
ATC
C1, C7, C13, C14
C2, C3, C11
C4, C5, C8, C9
C6, C15, C16
C10
47 pF Chip Capacitors
100B470JP 500X
44F3360
0.8−8.0 Gigatrim Variable Capacitors
10 pF Chip Capacitors
Newark
ATC
100B100JP 500X
93F2975
10 mF, 35 V Tantalum Chip Capacitor
3.0 pF Chip Capacitor
Newark
ATC
100B3R0JP 500X
C12
0.5 pF Chip Capacitor (MRF9060)
0.7 pF Chip Capacitor (MRF9060S)
100B0R5BP 500X
100B0R7BP 500X
ATC
ATC
C17
220 mF Electrolytic Chip Capacitor
12.5 nH Inductors
14F185
Newark
Coilcraft
Avnet
L1, L2
A04T−5
N1, N2
WB1, WB2
N−Type Panel Mount, Stripline
10 mil Brass Wear Blocks
3052−1648−10
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5−4
ꢈꢉ
ꢈꢊ ꢏ
ꢍ
ꢎ ꢎ
ꢔ ꢊ
ꢍ
ꢑ ꢑ
ꢔ ꢕ
ꢈꢊ ꢒ
ꢖ ꢕ
ꢈꢏ
ꢖ ꢊ
ꢈꢊ ꢌ ꢈꢊ ꢉ
ꢈꢓ
ꢚ ꢔꢊ
ꢈꢌ
ꢈꢙ
ꢈꢘ
ꢂ ꢃꢄ ꢅꢆ
ꢚ ꢔꢕ
ꢇ ꢅ ꢆꢄꢅ ꢆ
ꢈꢊ
ꢈꢊ ꢓ
ꢈꢕ
ꢈꢒ
ꢈꢊꢊ
ꢈꢊ ꢗ
ꢈꢊ ꢕ
MRF9060
900 MHz
ꢀꢛ ꢜꢝ ꢗꢕ
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 − 960 MHz Broadband Test Circuit Component Layout
MRF9060LR1 MRF9060LSR1
5−5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ꢌ ꢗ
ꢊꢙ
ꢊꢏ
ꢑ
ꢱ ꢲ
ꢓ ꢌ
h
ꢓ ꢗ
ꢊꢉ
ꢊꢌ
ꢊꢓ
ꢊꢒ
ꢊꢕ
ꢍ
ꢄ
ꢂ
ꢴ ꢕ ꢉ ꢍ ꢥꢦ
ꢴ ꢉ ꢗ ꢚ ꢤꢄ ꢟ ꢄ ꢧ
ꢴ ꢓ ꢌꢗ ꢵꢡ
ꢎ ꢎ
ꢒ ꢌ
ꢩ ꢪ ꢫ
ꢝ ꢒꢗ
ꢝ ꢒꢕ
ꢝ ꢒꢓ
ꢝ ꢊꢗ
ꢝ ꢊꢕ
ꢝ ꢊꢓ
ꢎ
ꢭ
ꢂ ꢠꢎ
ꢂ ꢀꢖ
ꢆꢸꢩ ꢝ ꢆꢩ ꢹꢛ ꢠꢛ ꢺ ꢲꢪꢶ ꢛ ꢵꢛ ꢹꢫ ꢨ
ꢊ ꢗꢗ ꢻꢯꢰ ꢆꢩ ꢹꢛ ꢣ ꢱꢺ ꢦꢼꢹ ꢽ
ꢝ ꢒꢉ
ꢝ ꢒꢙ
ꢝ ꢊꢉ
ꢝ ꢊꢙ
ꢊ ꢊ
ꢊꢗ
ꢘꢒ ꢗ
ꢘꢒ ꢌ
ꢘ ꢓꢗ
ꢘ ꢓꢌ
ꢘ ꢌꢗ
ꢘ ꢌꢌ
ꢘ ꢉꢗ
ꢬ ꢨ ꢁꢀꢟ ꢭ ꢅꢟ ꢃꢈꢮ ꢤꢠ ꢯꢰꢧ
Figure 3. Class AB Broadband Circuit Performance
ꢊ ꢙ
ꢊ ꢏꢞ ꢌ
ꢊ ꢏ
ꢝ ꢕꢗ
ꢝ ꢕꢌ
ꢝ ꢒꢗ
ꢂ
ꢴ ꢉ ꢌ ꢗ ꢵ ꢡ
ꢌ ꢗꢗ ꢢ ꢵꢡ
ꢎ ꢭ
ꢂ
ꢴ ꢕ ꢏꢌ ꢵꢡ
ꢎ ꢭ
ꢝ ꢒꢌ
ꢝ ꢓꢗ
ꢝ ꢓꢌ
ꢝ ꢌꢗ
ꢝ ꢌꢌ
ꢝ ꢉꢗ
ꢓ ꢌꢗꢢ ꢵ ꢡ
ꢊ ꢉꢞ ꢌ
ꢊ ꢉ
ꢌ ꢗꢗ ꢵꢡ
ꢓ ꢌꢗ ꢵꢡ
ꢕ ꢏꢌ ꢢꢵ ꢡ
ꢉ ꢌꢗ ꢵꢡ
ꢍ
ꢴ ꢕ ꢉ ꢍ ꢥꢦ
ꢬ ꢊ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ
ꢍ
ꢴ ꢕ ꢉ ꢍꢥ ꢦ
ꢬ ꢊ ꢴ ꢘꢓ ꢌ ꢠꢯ ꢰ
ꢎ ꢎ
ꢎ ꢎ
ꢊ ꢌꢞ ꢌ
ꢊ ꢌ
ꢬ ꢕ ꢴ ꢘ ꢓꢌ ꢞ ꢊ ꢠꢯ ꢰ
ꢬ ꢕ ꢴ ꢘꢓ ꢌ ꢞꢊ ꢠꢯ ꢰ
ꢊ
ꢊꢗ
ꢊ ꢗꢗ
ꢊ
ꢊ ꢗ
ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢟ ꢀ ꢤꢚꢡꢆꢆꢣ ꢧ ꢄ ꢟ ꢄ
ꢊꢗ ꢗ
ꢄ ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇꢚꢟ ꢀ ꢤ ꢚꢡꢆꢆ ꢣꢧ ꢄ ꢟꢄ
ꢩ ꢪꢫ
ꢄ
ꢩ ꢪ ꢫ
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
ꢗ
ꢉ ꢗ
ꢕ ꢗ
ꢊ ꢙ
ꢍ
ꢴ ꢕ ꢉ ꢍ ꢥꢦ
ꢴ ꢓ ꢌ ꢗ ꢵ ꢡ
ꢎ ꢎ
ꢑ
ꢱ ꢲ
ꢝꢊ ꢗ
ꢂ
ꢎ ꢭ
ꢬꢊ ꢴ ꢘ ꢓꢌ ꢠ ꢯꢰ
ꢌ ꢗ
ꢓ ꢗ
ꢝꢕ ꢗ
ꢝꢒ ꢗ
ꢝꢓ ꢗ
ꢝꢌ ꢗ
ꢝꢉ ꢗ
ꢝꢏ ꢗ
ꢬꢕ ꢴ ꢘ ꢓꢌ ꢞ ꢊ ꢠ ꢯꢰ
ꢊ ꢉ
ꢊ ꢓ
h
ꢒ ꢗ
ꢕ ꢗ
ꢒꢶ ꢥ ꢢꢇ ꢶ ꢥꢛ ꢶ
ꢊ ꢕ
ꢊ ꢗ
ꢍ
ꢂ
ꢴ ꢕ ꢉ ꢍ ꢥꢦ
ꢴ ꢓ ꢌꢗ ꢵ ꢡ
ꢎ ꢎ
ꢌꢫ ꢷꢢ ꢇ ꢶ ꢥꢛꢶ
ꢊ ꢗ
ꢗ
ꢎ ꢭ
ꢏꢫ ꢷꢢ ꢇ ꢶ ꢥꢛꢶ
ꢬ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ
ꢙ
ꢊ ꢗ
ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢟ ꢀ ꢤꢚꢡꢆꢆꢣ ꢧ ꢡꢍ ꢑ ꢞ
ꢊ ꢗ ꢗ
ꢗ ꢞꢊ
ꢊ
ꢊꢗ
ꢊ ꢗꢗ
ꢄ
ꢩ ꢪꢫ
ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇꢚꢟ ꢀ ꢤ ꢚꢡꢆꢆ ꢣꢧ ꢄ ꢟꢄ
ꢄ
ꢩ ꢪ ꢫ
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5−6
TYPICAL CHARACTERISTICS
ꢉ ꢗ
ꢊꢙ
ꢊꢉ
ꢑ
ꢱ ꢲ
ꢓ ꢗ
ꢕ ꢗ
ꢊꢓ
ꢊꢕ
ꢍ
ꢴ ꢕ ꢉ ꢍ ꢥꢦ
ꢴ ꢓ ꢌꢗ ꢵꢡ
ꢎ ꢎ
h
ꢂ
ꢎ ꢭ
ꢬ ꢊ ꢴ ꢘ ꢓꢌ ꢠꢯ ꢰ
ꢗ
ꢬ ꢕ ꢴ ꢘ ꢓꢌ ꢞ ꢊ ꢠꢯ ꢰ
ꢝ ꢕꢗ
ꢊꢗ
ꢙ
ꢝ ꢓꢗ
ꢝ ꢉꢗ
ꢂ ꢠꢎ
ꢉ
ꢊ
ꢊ ꢗ
ꢨ ꢇ ꢅꢆꢄ ꢅꢆ ꢄ ꢇ ꢚꢟ ꢀ ꢤꢚꢡꢆꢆꢣ ꢧ ꢄ ꢟ ꢄ
ꢊ ꢗꢗ
ꢄ
ꢩ ꢪ ꢫ
Figure 8. Power Gain, Efficiency, and IMD
versus Output Power
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5−7
ꢋ ꢴ ꢌ Ω
ꢩ
ꢋ
ꢾꢩ ꢺ ꢥ
ꢋ
ꢲ ꢩꢪ ꢶ ꢦ ꢛ
ꢬ ꢴ ꢘ ꢉꢗ ꢠꢯ ꢰ
ꢬ ꢴ ꢘꢒ ꢗ ꢠꢯ ꢰ
ꢬ ꢴ ꢘꢉ ꢗ ꢠꢯ ꢰ
ꢬ ꢴ ꢘ ꢒꢗ ꢠꢯ ꢰ
ꢍ
ꢎ ꢎ
ꢴ ꢕ ꢉ ꢍ ꢨ ꢂ ꢴ ꢓ ꢌꢗ ꢵꢡ ꢨ ꢄ ꢴ ꢉ ꢗ ꢚ ꢄ ꢟ ꢄ
ꢎ ꢭ ꢩ ꢪ ꢫ
f
Z
Z
load
source
MHz
Ω
Ω
930
945
960
0.80 − j0.10
0.80 − j0.05
0.81 − j0.10
2.08 − j0.65
2.07 − j0.38
2.04 − j0.37
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
Test circuit impedance as measured
from drain to ground.
load
ꢇ ꢪ ꢫꢱ ꢪ ꢫ
ꢠꢺ ꢫ ꢦꢷ ꢼꢹ ꢽ
ꢃꢛ ꢫ ꢸꢩ ꢶꢻ
ꢎꢛ ꢜꢼꢦꢛ
ꢅꢹ ꢥ ꢛꢶ ꢆꢛ ꢲꢫ
ꢂ ꢹꢱꢪ ꢫ
ꢠ ꢺꢫ ꢦꢷꢼ ꢹꢽ
ꢃ ꢛꢫꢸ ꢩꢶ ꢻ
Z
Z
source
load
Figure 9. Series Equivalent Source and Load Impedance
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5−8
NOTES
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5−9
NOTES
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5−10
PACKAGE DIMENSIONS
2X
Q
ꢠ
ꢠ
ꢠ
ꢔ
ꢃ ꢇ ꢆꢟ ꢣ ꢿ
ꢊꢞ ꢂ ꢃ ꢆꢟ ꢀ ꢄꢀ ꢟ ꢆ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢣ ꢡ ꢃ ꢎ ꢆꢇ ꢖ ꢟꢀ ꢡꢃ ꢈ ꢟꢣ
ꢄ ꢟꢀ ꢡ ꢣꢠꢟ ꢮ ꢊꢓꢞ ꢌꢠꢝ ꢊꢘꢘ ꢓꢞ
G
1
ꢺꢺ ꢺ
ꢆ ꢡ
B
ꢕꢞ ꢈ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢑ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂ ꢇꢃ ꢿ ꢂ ꢃ ꢈ ꢯ ꢞ
ꢒꢞ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂ ꢇꢃ ꢯ ꢂ ꢣ ꢠꢟ ꢡꢣ ꢅ ꢀ ꢟꢎ ꢗꢞ ꢗ ꢒꢗ ꢤꢗ ꢞꢏ ꢉꢕ ꢧ ꢡꢚ ꢡꢮ
ꢁ ꢀ ꢇꢠ ꢄꢡ ꢈ ꣀꢡ ꢑ ꢟ ꢔ ꢇꢎ ꢮꢞ
3
INCHES
DIM MIN MAX
MILLIMETERS
B
MIN
ꢕꢗꢞ ꢊꢘ
ꢌꢞ ꢏꢕ
ꢒꢞ ꢊꢙ
ꢌꢞ ꢒꢒ
ꢊꢞ ꢓꢗ
ꢗꢞ ꢊꢗ
MAX
ꢕ ꢗꢞ ꢓꢌ
ꢌ ꢞꢘ ꢏ
ꢓ ꢞꢓ ꢌ
ꢌ ꢞꢌ ꢘ
ꢊ ꢞꢉ ꢌ
ꢗ ꢞꢊ ꢌ
2
(FLANGE)
A
B
ꢗꢞ ꢏꢘꢌ
ꢗꢞ ꢕꢕꢌ
ꢗꢞ ꢊꢕꢌ
ꢗꢞ ꢕꢊꢗ
ꢗꢞ ꢗꢌꢌ
ꢗꢞ ꢗꢗꢓ
ꢗꢞ ꢙꢗꢌ
ꢗꢞ ꢕꢒꢌ
ꢗꢞ ꢊꢏꢌ
ꢗꢞ ꢕꢕꢗ
ꢗꢞ ꢗꢉꢌ
ꢗꢞ ꢗꢗꢉ
2X K
2X D
ꣁꣁ ꣁ
C
ꢠ
ꢠ
ꢠ
ꢆ ꢡ
ꢔ
R
D
(LID)
E
F
ꢠ
ꢠ
ꢠ
ꢔ
ꢦꢦꢦ
ꢆ ꢡ
G
ꢗꢞ ꢌꢉꢕ ꢢꢔ ꢣꢈ
ꢊꢓꢞ ꢕꢙ ꢢꢔꢣ ꢈ
H
ꢗꢞ ꢗꢏꢏ
ꢗꢞ ꢕꢕꢗ
ꢗꢞ ꢒꢌꢌ
ꢗꢞ ꢒꢌꢏ
ꢗꢞ ꢊꢕꢌ
ꢗꢞ ꢕꢕꢏ
ꢗꢞ ꢕꢕꢌ
ꢗꢞ ꢗꢙꢏ
ꢗꢞ ꢕꢌꢗ
ꢗꢞ ꢒꢉꢌ
ꢗꢞ ꢒꢉꢒ
ꢗꢞ ꢊꢒꢌ
ꢗꢞ ꢕꢒꢒ
ꢗꢞ ꢕꢒꢌ
ꢊꢞ ꢘꢉ
ꢌꢞ ꢌꢘ
ꢘꢞ ꢗꢕ
ꢘꢞ ꢗꢏ
ꢒꢞ ꢊꢙ
ꢌꢞ ꢏꢏ
ꢌꢞ ꢏꢕ
ꢕ ꢞꢕ ꢊ
ꢉ ꢞꢒ ꢌ
ꢘ ꢞꢕ ꢏ
ꢘ ꢞꢕ ꢕ
ꢒ ꢞꢓ ꢒ
ꢌ ꢞꢘ ꢕ
ꢌ ꢞꢘ ꢏ
F
K
H
ꢠ
ꢠ
ꢠ
ꢔ
M
ꢦꢦꢦ
ꢆ ꢡ
N
N
(LID)
Q
C
E
R
S
aaa
bbb
ccc
ꢗꢞ ꢗꢗꢌ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢗꢊꢗ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢗꢊꢌ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢊ ꢒꢢꢀ ꢟ ꢁ
ꢗꢞꢕ ꢌ ꢢꢀ ꢟꢁ
ꢗꢞ ꢒ ꢙꢢꢀ ꢟ ꢁ
S
(INSULATOR)
ꢠ
ꢠ
ꢠ
ꢔ
ꢺ ꢺꢺ
ꢆ ꢡ
SEATING
PLANE
T
ꢣ ꢆꢮ ꢖꢟ ꢊꢿ
ꢄ ꢂꢃ ꢊꢞ ꢎ ꢀ ꢡꢂ ꢃ
ꢕꢞ ꢑ ꢡꢆ ꢟ
ꢒꢞ ꢣ ꢇꢅ ꢀ ꢈ ꢟ
ꢠ
ꢠ
ꢠ
ꢔ
ꣁꣁ ꣁ
ꢆ ꢡ
M
(INSULATOR)
A
A
CASE 360B−05
ISSUE F
NI−360
MRF9060LR1
A
A
(FLANGE)
B
B
1
2
ꢃ ꢇ ꢆꢟ ꢣ ꢿ
ꢊꢞ ꢂ ꢃ ꢆꢟ ꢀ ꢄꢀ ꢟ ꢆ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂꢇ ꢃ ꢣ ꢡ ꢃ ꢎ ꢆꢇ ꢖ ꢟꢀ ꢡꢃ ꢈ ꢟꢣ
ꢄ ꢟꢀ ꢡ ꢣꢠꢟ ꢮ ꢊꢓꢞ ꢌꢠꢝ ꢊꢘꢘ ꢓꢞ
ꢕꢞ ꢈ ꢇ ꢃ ꢆꢀ ꢇ ꢖꢖ ꢂꢃ ꢑ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂ ꢇꢃ ꢿ ꢂ ꢃ ꢈ ꢯ ꢞ
ꢒꢞ ꢎ ꢂ ꢠꢟꢃ ꢣ ꢂ ꢇꢃ ꢯ ꢂ ꢣ ꢠꢟ ꢡꢣ ꢅ ꢀ ꢟꢎ ꢗꢞ ꢗ ꢒꢗ ꢤꢗ ꢞꢏ ꢉꢕ ꢧ ꢡꢚ ꢡꢮ
ꢁ ꢀ ꢇꢠ ꢄꢡ ꢈ ꣀꢡ ꢑ ꢟ ꢔ ꢇꢎ ꢮꢞ
2X K
(FLANGE)
2X D
ꢠ
ꢠ
ꢠ
ꣁꣁ ꣁ
ꢆ ꢡ
ꢔ
INCHES
DIM MIN MAX
MILLIMETERS
R
MIN
ꢘꢞ ꢌꢒ
ꢌꢞ ꢏꢕ
ꢕꢞ ꢉꢏ
ꢌꢞ ꢒꢒ
ꢗꢞ ꢙꢘ
ꢗꢞ ꢊꢗ
ꢊꢞ ꢓꢌ
ꢕꢞ ꢊꢉ
ꢘꢞ ꢗꢕ
ꢘꢞ ꢗꢏ
ꢌꢞ ꢏꢏ
ꢌꢞ ꢏꢕ
MAX
ꢘ ꢞꢏ ꢙ
ꢌ ꢞꢘ ꢏ
ꢒ ꢞꢘ ꢓ
ꢌ ꢞꢌ ꢘ
ꢊ ꢞꢊ ꢓ
ꢗ ꢞꢊ ꢌ
ꢊ ꢞꢏ ꢗ
ꢕ ꢞꢘ ꢕ
ꢘ ꢞꢕ ꢏ
ꢘ ꢞꢕ ꢕ
ꢌ ꢞꢘ ꢕ
ꢌ ꢞꢘ ꢏ
(LID)
A
B
ꢗꢞ ꢒꢏꢌ
ꢗꢞ ꢕꢕꢌ
ꢗꢞ ꢊꢗꢌ
ꢗꢞ ꢕꢊꢗ
ꢗꢞ ꢗꢒꢌ
ꢗꢞ ꢗꢗꢓ
ꢗꢞ ꢗꢌꢏ
ꢗꢞ ꢗꢙꢌ
ꢗꢞ ꢒꢌꢌ
ꢗꢞ ꢒꢌꢏ
ꢗꢞ ꢕꢕꢏ
ꢗꢞ ꢕꢕꢌ
ꢗꢞ ꢒꢙꢌ
ꢗꢞ ꢕꢒꢌ
ꢗꢞ ꢊꢌꢌ
ꢗꢞ ꢕꢕꢗ
ꢗꢞ ꢗꢓꢌ
ꢗꢞ ꢗꢗꢉ
ꢗꢞ ꢗꢉꢏ
ꢗꢞ ꢊꢊꢌ
ꢗꢞ ꢒꢉꢌ
ꢗꢞ ꢒꢉꢒ
ꢗꢞ ꢕꢒ
ꢠ
ꢠ
ꢠ
ꢦꢦꢦ
ꢆ ꢡ
ꢔ
C
N
F
(LID)
D
H
E
ꢠ
ꢠ
ꢠ
ꢔ
ꢦꢦꢦ
ꢆ ꢡ
F
H
K
E
M
N
C
S
R
(INSULATOR)
S
ꢗꢞ ꢕꢒꢌ
aaa
bbb
ccc
ꢗꢞ ꢗꢗꢌ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢗꢊꢗ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢗꢊꢌ ꢢꢀ ꢟ ꢁ
ꢗꢞ ꢊꢒ ꢢꢀ ꢟꢁ
ꢗꢞ ꢕꢌꢢꢀ ꢟ ꢁ
ꢗꢞ ꢒꢙ ꢢꢀ ꢟꢁ
ꢠ
ꢠ
ꢠ
ꢔ
ꢺ ꢺꢺ
ꢆ ꢡ
SEATING
PLANE
PIN 3
T
M
(INSULATOR)
ꢣ ꢆꢮ ꢖꢟ ꢊꢿ
ꢠ
ꢠ
ꢠ
ꣁꣁ ꣁ
ꢆ ꢡ
ꢔ
ꢄ ꢂꢃ ꢊꢞ ꢎ ꢀ ꢡꢂ ꢃ
ꢕꢞ ꢑ ꢡꢆ ꢟ
ꢒꢞ ꢣ ꢇꢅ ꢀ ꢈ ꢟ
CASE 360C−05
ISSUE D
NI−360S
MRF9060LSR1
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5−11
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Document Number:
Rev. 8, 12/2004
MRF9060
相关型号：
MRF9060LR1
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-360, CASE 360B-05, 2 PIN
ROCHESTER
MRF9060MBR1
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
MOTOROLA
MRF9060MR1
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
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