AO4450 [FREESCALE]
40V N-Channel MOSFET; 40V N沟道MOSFET![AO4450](http://pdffile.icpdf.com/pdf2/p00209/img/icpdf/AO4450_1181022_icpdf.jpg)
型号: | AO4450 |
厂家: | ![]() |
描述: | 40V N-Channel MOSFET |
文件: | 总5页 (文件大小:265K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AO4450
40V N-Channel MOSFET
General Description
The AO4450 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate
charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS
40V
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
7A
< 30mΩ
< 38mΩ
RDS(ON) (at VGS=4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
±20
V
A
TA=25°C
TA=70°C
7
Continuous Drain
Current
ID
5.5
Pulsed Drain Current C
Avalanche Current C
IDM
IAS
45
14
A
Avalanche energy L=0.1mH C
EAS
10
3.1
mJ
TA=25°C
PD
W
°C
Power Dissipation B
TA=70°C
2
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
31
Max
40
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
59
75
RθJL
16
24
1 / 5
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AO4450
40V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
40
V
VDS=40V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
3
nA
V
VGS(th)
ID(ON)
1.7
45
2.5
A
24
36
30
45
38
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=5A
30
mΩ
S
VDS=5V, ID=7A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
30
IS=1A,VGS=0V
0.76
1
V
Maximum Body-Diode Continuous Current
3.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
516
82
pF
pF
pF
Ω
VGS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
43
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=7A
VGS=10V, VDS=20V, RL=2.8Ω,
4.6
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
8.9
4.3
2.4
1.4
6.4
3.6
16.2
6.6
18
13
7
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
ns
RGEN=3Ω
tD(off)
tf
ns
ns
trr
IF=7A, dI/dt=100A/µs
IF=7A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
10
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2 / 5
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AO4450
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
30
20
10
0
40
30
20
10
0
10V
VDS=5V
4.5V
5V
4V
VGS=3.5V
4
125°C
25°C
1
2
3
4
5
0
1
2
3
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
40
35
30
25
20
2.2
2
1.8
1.6
1.4
1.2
1
VGS=10V
ID=7A
VGS=4.5V
VGS=4.5V
ID=5A
VGS=10V
0.8
0
25
50
75
100 125 150 175 200
0
5
10
15
ID (A)
20
25
30
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
80
70
60
50
40
30
20
1.0E+02
1.0E+01
ID=7A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
125°C
25°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3 / 5
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AO4450
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
700
600
500
400
300
200
100
0
VDS=20V
ID=7A
8
Ciss
6
4
Coss
2
Crss
0
0
2
4
6
8
10
0
5
10
15
20
25
30
35
40
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
10000
1000
100
10
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
10s
DC
0.0
1
V
DS (Volts)
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
4 / 5
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AO4450
40V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LIA2R
BVDSS
Vds
Id
Vgs
Vds
+
Vgs
Vdd
I AR
VDC
Id
Rg
-
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Qrr = - Idt
Vds +
Vds -
Ig
DUT
Vgs
trr
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
5 / 5
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