AO4450L [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO4450L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO4450
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO4450 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO4450 is Pb-free
(meets ROHS & Sony 259 specifications). AO4450L
is a Green Product ordering option. AO4450 and
AO4450L are electrically identical.
VDS (V) = 40V
ID = 6.6A (VGS = 10V)
R
DS(ON) <30mΩ (VGS = 10V)
DS(ON) < 43mΩ (VGS = 4.5V)
R
D
S
S
S
S
G
D
D
D
D
G
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±20
6.6
V
A
TA=25°C
TA=70°C
ID
5.2
Pulsed Drain Current B
IDM
20
TA=25°C
TA=70°C
2.5
PD
W
Power Dissipation
1.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
38
Max
50
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
69
80
RθJL
24
30
AO4450
N Channel Electrical Characteristics (T=25°C unless otherwise noted)
J
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
VDS=32V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=6.6A
100
3
nA
V
VGS(th)
ID(ON)
1
2.3
20
A
21.7
37
30
43
mΩ
mΩ
RDS(ON)
TJ=125°C
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.5A
VDS=5V, ID=6.6A
IS=1A,VGS=0V
31.3
23
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
0.77
1
Maximum Body-Diode Continuous Current
6.6
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
404
95
pF
pF
pF
Ω
VGS=0V, VDS=20V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
37
VGS=0V, VDS=0V, f=1MHz
2.7
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
9.3
4.6
1.6
2.5
4.3
3.4
15
nC
nC
nC
nC
ns
V
GS=10V, VDS=20V, ID=6.6A
Qgd
tD(on)
tr
tD(off)
tf
VGS=10V, VDS=20V, RL=3Ω,
RGEN=3Ω
ns
ns
2.8
21.2
15.8
ns
trr
IF=6.6A, dI/dt=100A/µs
IF=6.6A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 1 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
25
20
15
10
5
20
15
10
5
10V
5.0V
VDS=5V
4.5V
4.0V
125°C
VGS=3.5V
25°C
0
0
0
1
2
3
4
5
2
2.5
3
3.5
4
4.5
V
DS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics
40
35
30
25
20
15
10
2
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
ID=6.6A
VGS=4.5V
ID=5.5A
VGS=10V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
80
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=6.6A
60
40
20
0
125°C
125°C
25°C
25°C
0.0
0.2
0.4
SD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AO4450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10
8
800
600
400
200
0
VDS=40V
ID= 6.6A
Ciss
6
Coss
4
Crss
2
0
0
10
20
DS (Volts)
30
40
0
2
4
6
8
10
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
40
100.0
10.0
1.0
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
10µs
30
20
10
0
100µs
1ms
0.1s
10ms
1s
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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