AO3434 [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | AO3434 |
| 厂家： | 
Freescale |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总4页 (文件大小：455K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3434
30V N-Channel MOSFET
General Description
The AO3434 uses advanced trench technology to provide excellent R
DS(ON) and low gate charge.
This device is suitable for use as a load switch or
in PWM applications. It is ESD protected.
Features
VDS (V) = 30V
ID = 4.2A
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
RDS(ON) < 52mΩ
RDS(ON) < 75mΩ
ESD protected
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Maximum
Steady-State
Parameter
Drain-Source Voltage
Symbol 10 sec
VDS
Units
30
V
Gate-Source Voltage
VGS
±20
V
A
TA=25°C
TA=70°C
4.2
3.3
3.5
2.8
Continuous Drain
Current A,F
ID
Pulsed Drain Current B
IDM
30
TA=25°C
TA=70°C
1.4
0.9
1.0
PD
W
°C
Power Dissipation
0.64
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
100
63
Max
90
125
80
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Steady-State
Steady-State
RθJL
1 / 4
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AO3434
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
V
DS=30V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS= ±16V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4.2A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
1.8
uA
V
VGS(th)
ID(ON)
1
1.32
30
A
43
58
52
74
75
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=2A
VDS=5V, ID=4.2A
IS=1A,VGS=0V
59
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
8.5
0.77
1
V
Maximum Body-Diode Continuous Current
1.8
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
269
65
41
1
340
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS=0V, VDS=0V, f=1MHz
1.5
7.2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
5.7
3
nC
nC
nC
nC
ns
V
GS=10V, VDS=15V, ID=4.2A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
1.37
0.65
2.6
3.8
8
VGS=10V, VDS=15V, RL=3.6Ω,
RGEN=3Ω
5.5
ns
tD(off)
tf
15.2
3.7
23
5.5
21
ns
ns
trr
IF=4.2A, dI/dt=100A/µs
IF=4.2A, dI/dt=100A/µs
15.5
7.1
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤10s thermal resistance rating.
Rev3:Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2 / 4
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AO3434
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
15
12
9
8V
10V
VDS=5V
6V
4.5V
4V
6
3.5V
125°C
3
25°C
VGS=3V
3
0
0
0
1
2
4
5
0
1
2
3
4
5
6
VDS (Volts)
Fig 1: On-Region Characteristics
V
GS(Volts)
Figure 2: Transfer Characteristics
80
70
60
50
40
30
1.8
1.6
1.4
1.2
1
VGS=4.5V
VGS=10V
Id=4.2A
VGS=4.5V
Id=3.5A
VGS=10V
10
0.8
0
5
15
20
0
25
50
75
100
125
150
175
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
102
90
1.0E+01
1.0E+00
1.0E-01
1.0E-02
ID=4.2A
125°C
78
125°C
25°C
66
1.0E-03
54
G
25°C
1.0E-04
42
1.0E-05
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD (Volts)
V
GS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
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AO3434
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
500
400
300
200
100
0
10
8
VDS=15V
ID=4.2A
Ciss
6
4
Coss
2
Crss
0
0
1
2
3
4
5
6
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
V
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.0
10.0
1.0
30
10µs
25
20
15
10
5
TJ(Max)=150°C
TA=25°C
RDS(ON)
limited
100µ
1m
10ms
DC
0.1s
0.1
TJ(Max)=150°C
TA=25°C
0
0.0
0.001
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
V
DS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
PNG
0.1
D
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
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