AO3435L [AOS]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | AO3435L |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3435
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3435/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.5V. This
device is suitable for use in buck convertor
applications.
VDS = -20V
ID = -3.5A
(VGS = -4.5V)
(VGS =- 4.5V)
(VGS = -2.5V)
(VGS = -1.8V)
(VGS = -1.5V)
R
R
R
R
DS(ON) < 70mΩ
DS(ON) < 90mΩ
DS(ON) < 110mΩ
DS(ON) < 130mΩ
AO3435 and AO3435L are electrically identical.
-RoHS Compliant
-AO3435L is Halogen Free
TO-236
(SOT-23)
Top View
D
G
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Units
Symbol
VDS
10 Sec
Steady State
-20
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current A
V
V
VGS
±8
TA=25°C
TA=70°C
-3.5
-2.7
-2.9
-2.3
ID
A
Pulsed Drain Current B
IDM
-25
TA=25°C
TA=70°C
1.4
0.9
1
PD
W
Power Dissipation A
0.6
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
100
63
125
80
Steady-State
Steady-State
RθJL
Alpha & Omega Semiconductor, Ltd.
AO3435
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-20
V
VDS=-20V, VGS=0V
-1
-5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
V
DS=0V, VGS=±8V
VDS=VGS ID=-250µA
GS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-3.5A
±100
-1
nA
V
VGS(th)
ID(ON)
-0.5
-25
-0.65
V
A
56
80
70
100
90
mΩ
TJ=125°C
mΩ
mΩ
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-3.0A
VGS=-1.8V, ID=-2.0A
VGS=-1.5V, ID=-0.5A
VDS=-5V, ID=-3.5A
70
85
110
130
100
15
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
IS=-1A,VGS=0V
-0.7
-1
Maximum Body-Diode Continuous Current
-1.4
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
560
80
745
pF
pF
pF
Ω
VGS=0V, VDS=-10V, f=1MHz
GS=0V, VDS=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
70
V
15
23
11
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
8.5
1.2
2.1
7.2
36
nC
nC
nC
ns
ns
ns
ns
VGS=-4.5V, VDS=-10V, ID=-3.5A
VGS=-4.5V, VDS=-10V, RL=3Ω,
RGEN=6Ω
tD(off)
tf
53
56
trr
IF=-3.5A, dI/dt=100A/µs
IF=-3.5A, dI/dt=100A/µs
37
49
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
27
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2
FR-4 board with 2oz. Copper, in a still airenvironment with T =25°C. The SOA
A
curve provides a single pulse rating.
Rev0 : April 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
5
20
15
10
5
VDS=-5V
-3.0V
-4.5V
-2.5V
-2.0V
VGS=-1.5V
125°C
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
-VGS(Volts)
2
2.5
3
-VDS (Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
150
130
110
90
1.6
1.4
1.2
1
VGS=-
2.5V
VGS=-1.5V
VGS=-1.8V
VGS=-4.5V
ID=-3.5A
VGS=-1.5V
ID=-0.5A
VGS=-2.5V
VGS=-4.5V
70
50
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
-ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
180
160
140
120
100
80
1E+02
1E+01
ID=-3.5A
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
25°C
125°C
60
25°C
40
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS (Volts)
-VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO3435
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
1400
1200
1000
800
600
400
200
0
VDS=-10V
ID=-3.5A
Ciss
Coss
Crss
0
2
4
6
8
10
0
5
10
-VDS (Volts)
15
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
1000
100
10
TJ(Max)=150°C
TA=25°C
RDS(ON)
10µs
100µ
limited
1ms
10ms
0.1s
1s
1
0.10
DC
TJ(Max)=150°C
TA=25°C
0.1
0.01
0.00001
0.001
0.1
10
1000
0.1
1
10
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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