AO3438 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO3438 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3438
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3438 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. AO3438 and AO3438L are eletrically
identical.
VDS = 20V
ID = 3A
(VGS = 4.5V)
(VGS = 4.5V)
(VGS = 2.5V)
(VGS = 1.8V)
RDS(ON) < 62mΩ
RDS(ON) < 70mΩ
RDS(ON) < 85mΩ
-RoHs Compliant
-AO3438L is Halogen Free
TO-236
(SOT-23)
Top View
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
Continuous Drain
Current A
±8
V
A
TA=25°C
TA=70°C
3
2.5
ID
Pulsed Drain Current B
IDM
16
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
Alpha & Omega Semiconductor, Ltd.
AO3438
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
20
V
V
DS=20V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS=±8V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=3A
100
1
nA
V
VGS(th)
ID(ON)
0.5
16
0.7
A
51
68
58
68
11
0.7
62
85
70
85
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
mΩ
mΩ
V
V
V
GS=2.5V, ID=2.8A
GS=1.8V, ID=2.5A
DS=5V, ID=3A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
S
V
A
IS=1A,VGS=0V
1
2
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
260
48
27
3
320
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=3A
4.5
3.8
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.9
0.4
0.6
2.5
3.2
21
nC
nC
nC
ns
ns
ns
ns
VGS=5V, VDS=10V, RL=3.3Ω,
R
GEN=6Ω
tD(off)
tf
3
trr
IF=3A, dI/dt=100A/µs
IF=3A, dI/dt=100A/µs
14
19
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
3.8
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1 : March 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
12
8
16
12
8
VDS=5V
4.5V
2V
2.5V
VGS=1.5V
4
4
125°C
25°C
1.5
0
0
0
1
2
3
4
5
0
0.5
1
2
2.5
V
DS (Volts)
V
GS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
120
100
80
1.6
1.4
1.2
1
VGS=1.8V
ID=2A
VGS=2.5V
ID=2.8A
VGS=1.8V
VGS=4.5V
ID=3A
VGS=2.5V
60
VGS=4.5V
40
0.8
0
3
6
9
12
-50 -25
0
25
50
75 100 125 150 175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
120
100
80
1E+01
1E+00
ID=3A
125°C
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
25°C
60
25°C
40
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS (Volts)
V
SD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO3438
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
400
300
200
100
0
VDS=10V
ID=3A
Ciss
Coss
Crss
0
0.5
1
1.5
Qg (nC)
Figure 7: Gate-Charge Characteristics
2
2.5
3
3.5
0
5
10
VDS (Volts)
Figure 8: Capacitance Characteristics
15
20
1000
100
10
100.00
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µ
10.00
1.00
0.10
0.01
1m
RDS(ON)
limited
10ms
0.1s
1s
DC
1
0.00001
0.001
0.1
10
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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