AO3460 [AOS]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | AO3460 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3460
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO3460/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC
converters. It is ESD protected. AO3460 and
AO3460L are electrically identical.
VDS (V) = 60V
ID = 0.65A (VGS = 10V)
R
R
DS(ON) < 1.7Ω (VGS = 10V)
DS(ON) < 2Ω (VGS = 4.5V)
-RoHS Compliant
-AO3460L is Halogen Free
D1
TO-236
(SOT-23)
Top View
G1
G
D
S
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
Continuous Drain
Current A, F
±20
0.65
V
A
TA=25°C
TA=70°C
ID
0.5
Pulsed Drain Current B
IDM
1.6
TA=25°C
TA=70°C
1.4
PD
W
Power Dissipation A
0.9
TJ, TSTG
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
t ≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3460
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
VDS=60V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
µA
IGSS
VDS=0V, VGS=±20V
VDS=VGS ID=250uA
VGS=10V, VDS=5V
VGS=10V, ID=0.65A
±10
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VGS(th)
ID(ON)
1
2.2
2.5
V
A
1.6
1.4
2.5
1.6
0.8
0.8
1.7
3
Ω
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
V
GS=4.5V, ID=0.5A
DS=5V, ID=0.65A
2
Ω
S
V
A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
V
IS=0.1A,VGS=0V
1
Maximum Body-Diode Continuous Current
1.2
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Input Capacitance
22
6
27
pF
pF
pF
VGS=0V, VDS=30V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
2
SWITCHING PARAMETERS
tD(on)
tr
tD(off)
tf
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
5.3
2.8
ns
ns
ns
ns
V
GS=10V, VDS=30V, RL=75Ω,
GEN=3Ω
R
19.7
5.5
trr
IF=0.65A, dI/dt=100A/µs, VGS=-9V
IF=0.65A, dI/dt=100A/µs, VGS=-9V
11.3
7.5
14
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 1: May 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
0.8
0.6
0.4
0.2
0
2
1.5
1
VDS=5V
10V
6V
4.5V
4V
25°C
3.5V
0.5
0
125°C
VGS=3.0V
-40°C
0
1
2
3
4
5
0
1
2
3
4
5
V
GS(Volts)
V
DS (Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Region Characteristics
3
2.5
2
2.2
1.8
1.4
1.0
0.6
VGS=10V
ID=0.65A
VGS=4.5V
ID=0.5
VGS=4.5V
1.5
1
VGS=10V
0
0.5
1
1.5
-50
0
50
100
150
200
I
D (A)
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
4
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
ID=0.65A
125°C
25°C
3.5
3
-40°C
125°C
2.5
2
25°C
4
1.5
1
0.0
0.4
0.8
1.2
2
6
8
10
V
SD (Volts)
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
10
8
VDS=30V
ID=0.65A
Ciss
6
4
Coss
2
Crss
0
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
50
60
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10.000
1.000
0.100
0.010
0.001
20
TJ(Max)=150°C
TA=25°C
10µs
100µs
16
12
8
1ms
10ms
RDS(ON)
limited
0.1s
1s
10s
DC
4
TJ(Max)=150°C
TC=25°C
0
0.0001 0.001
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=Ton/T
J,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
0.1
PD
0.01
Ton
T
Single Pulse
0.001 0.01
0.001
0.00001
0.0001
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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