AO3442 [AOS]
100V N-Channel MOSFET; 100V N沟道MOSFET
| 型号： | AO3442 |
| 厂家： | 
ALPHA & OMEGA SEMICONDUCTORS |
| 描述： | 100V N-Channel MOSFET |
| 文件： | 总5页 (文件大小：500K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3442
100V N-Channel MOSFET
General Description
Product Summary
VDS
100V
The AO3442 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
1A
< 630mΩ
< 720mΩ
SOT23
D
Top View
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
100
±20
1
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
ID
0.8
A
Pulsed Drain Current C
IDM
PD
4
1.4
TA=25°C
TA=70°C
W
°C
Power Dissipation B
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
90
125
80
RθJA
Steady-State
Steady-State
100
63
RθJL
Rev 0: Jun 2012
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Page 1 of 5
AO3442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
100
V
VDS=100V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±20V
VDS=VGS，ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=1A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.9
nA
V
VGS(th)
ID(ON)
1.7
4
2.3
A
514
983
554
2.8
630
1200
720
mΩ
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=0.8A
mΩ
S
VDS=5V, ID=1A
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
0.9
1.2
1
V
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
100
13
5
pF
pF
pF
Ω
VGS=0V, VDS=50V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=1A
VGS=10V, VDS=50V, RL=50Ω,
2.5
5
7.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
2.8
1.5
0.4
0.8
5
6
3
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
4
ns
RGEN=3Ω
tD(off)
tf
12
5
ns
ns
trr
IF=5.6A, dI/dt=100A/µs
IF=5.6A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
52
60
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jun 2012
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Page 2 of 5
AO3442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
2.5
2
5
4
3
2
1
0
10V
VDS=5V
6V
5V
4.5V
1.5
1
3.5V
125°C
25°C
0.5
0
VGS=3.0V
0
1
2
3
4
5
6
0
1
2
VDS (Volts)
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
Fig 1: On-Region Characteristics (Note E)
1200
1000
800
600
400
200
0
2.4
2.2
2
VGS=10V
ID=1A
VGS=4.5V
1.8
1.6
1.4
1.2
1
VGS=10V
=4.5V
ID=0.8A
VGS
0.8
0
25
50
75
100
125
150
175
0
0.5
1
1.5
ID (A)
2
2.5
3
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1200
900
600
300
0
1.0E+01
ID=1A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VGS (Volts)
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jun 2012
www.aosmd.com
Page 3 of 5
AO3442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
160
VDS=50V
ID=1A
140
120
100
80
8
Ciss
6
4
60
40
Crss
2
Coss
20
0
0
0
0.5
1
1.5
Qg (nC)
2
2.5
3
0
20
40
60
80
100
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
10.0
TA=25°C
10µs
RDS(ON)
limited
1.0
0.1
0.0
100µs
1ms
DC
10ms
TJ(Max)=150°C
TA=25°C
10s
1
1E-05
0.001
0.1
10
1000
0.01
0.1
1
10
100
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=Ton/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
1
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.001
1E-05
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jun 2012
www.aosmd.com
Page 4 of 5
AO3442
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Q
Qgd
Vds
VDC
-
-
DUT
Vgs
Igg
C
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
Rev 0: Jun 2012
www.aosmd.com
Page 5 of 5
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