AO3438 [FREESCALE]
20V N-Channel MOSFET; 20V N沟道MOSFET
| 型号： | AO3438 |
| 厂家： | 
Freescale |
| 描述： | 20V N-Channel MOSFET |
| 文件： | 总4页 (文件大小：426K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AO3438
20V N-Channel MOSFET
General Description
, low gate charge and
provide excellent RDS(ON)
The AO3438 uses advanced trench technology to
operation with gate voltages as low as 1.8V. This
applications.
device is suitable for use as a load switch or in PWM
Features
VDS = 20V
ID = 3A
DS(ON) < 62mΩ
(VGS = 4.5V)
(VGS = 4.5V)
(VGS = 2.5V)
(VGS = 1.8V)
R
RDS(ON) < 70mΩ
RDS(ON) < 85mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
A
TA=25°C
TA=70°C
3
2.5
Continuous Drain
Current A
ID
Pulsed Drain Current B
IDM
16
TA=25°C
TA=70°C
1.4
PD
W
°C
Power Dissipation A
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
Maximum Junction-to-Lead C
RθJL
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AO3438
20V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
20
V
VDS=20V, VGS=0V
1
5
IDSS
Zero Gate Voltage Drain Current
µA
TJ=55°C
VDS=0V, VGS=±8V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=3A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
100
1
nA
V
VGS(th)
ID(ON)
0.5
16
0.7
A
51
68
58
68
11
0.7
62
85
70
85
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=2.5V, ID=2.8A
VGS=1.8V, ID=2.5A
VDS=5V, ID=3A
mΩ
mΩ
S
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
IS=1A,VGS=0V
1
2
V
Maximum Body-Diode Continuous Current
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
260
48
27
3
320
pF
pF
pF
Ω
VGS=0V, VDS=10V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=3A
4.5
3.8
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
2.9
0.4
0.6
2.5
3.2
21
nC
nC
nC
ns
ns
ns
ns
V
GS=5V, VDS=10V, RL=3.3Ω,
GEN=6Ω
R
tD(off)
tf
3
trr
IF=3A, dI/dt=100A/µs
IF=3A, dI/dt=100A/µs
14
19
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
Qrr
nC
3.8
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2 / 4
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AO3438
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
16
VDS=5V
4.5V
2V
2.5V
12
12
8
8
VGS=1.5V
4
4
125°C
25°C
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
VDS (Volts)
VGS(Volts)
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
120
100
80
1.6
1.4
1.2
1
VGS=1.8V
ID=2A
VGS=2.5V
ID=2.8A
VGS=1.8V
VGS=4.5V
ID=3A
VGS=2.5V
60
VGS=4.5V
40
0.8
0
3
6
9
12
-50 -25
0
25
50
75 100 125 150 175
I
D (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Figure 4: On-Resistance vs. Junction
Temperature
120
100
80
1E+01
1E+00
ID=3A
125°C
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
25°C
60
25°C
40
0
2
4
6
8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
3 / 4
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AO3438
20V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
3
2
1
0
400
300
200
100
0
VDS=10V
ID=3A
Ciss
Coss
Crss
0
0.5
1
1.5
Qg (nC)
Figure 7: Gate-Charge Characteristics
2
2.5
3
3.5
0
5
10
DS (Volts)
Figure 8: Capacitance Characteristics
15
20
V
1000
100
10
100.00
TJ(Max)=150°C
TA=25°C
TJ(Max)=150°C
TA=25°C
10µs
100µ
10.00
1.00
0.10
0.01
1m
RDS(ON)
limited
10ms
0.1s
1s
DC
1
0.00001
0.001
0.1
10
1000
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
0.1
PD
0.01
Ton
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
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