AO3434A [FREESCALE]
30V N-Channel MOSFET; 30V N沟道MOSFET![AO3434A](http://pdffile.icpdf.com/pdf2/p00208/img/icpdf/AO3434_1179174_icpdf.jpg)
型号: | AO3434A |
厂家: | ![]() |
描述: | 30V N-Channel MOSFET |
文件: | 总5页 (文件大小:265K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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AO3434A
30V N-Channel MOSFET
General Description
technology with a low resistance package to provide
The AO3434A combines advanced trench MOSFET
DS(ON)
extremely low R
. This device is ideal for load switch
and battery protection applications.
Features
VDS
30V
ID (at VGS=10V)
4A
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS =4.5V)
RDS(ON) (at VGS =2.5V)
< 52mΩ
< 60mΩ
< 78mΩ
Typical ESD protection
HBM Class 3A
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
±12
4
V
V
VGS
TA=25°C
TA=70°C
Continuous Drain
Current
ID
3
A
Pulsed Drain Current C
IDM
PD
20
1.4
TA=25°C
TA=70°C
W
°C
Power Dissipation B
0.9
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
70
Max
90
Units
°C/W
°C/W
°C/W
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t
≤ 10s
RθJA
Steady-State
Steady-State
100
63
125
80
RθJL
1 / 5
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AO3434A
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
Typ
Max Units
STATIC PARAMETERS
ID=250µA, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
30
V
VDS=30V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
µA
5
TJ=55°C
VDS=0V, VGS=±10V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4A
IGSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±10
1.5
µA
V
VGS(th)
ID(ON)
0.7
20
1.05
A
42
66
52
82
60
78
mΩ
TJ=125°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=3A
47
mΩ
mΩ
S
VGS=2.5V, ID=2A
59
VDS=5V, ID=4A
IS=1A,VGS=0V
gFS
VSD
IS
Forward Transconductance
Diode Forward Voltage
15
0.75
1
V
Maximum Body-Diode Continuous Current
1.5
A
DYNAMIC PARAMETERS
Ciss
Coss
Crss
Rg
Input Capacitance
245
35
20
5
pF
pF
pF
Ω
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.7
2.6
0.5
1.0
2
10
5
nC
nC
nC
nC
ns
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=4A
Qgs
Qgd
tD(on)
tr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=3.75Ω,
RGEN=3Ω
3.5
22
ns
tD(off)
tf
ns
3.5
ns
trr
IF=4A, dI/dt=500A/µs
IF=4A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
6.5
7.5
ns
Qrr
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2 / 5
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AO3434A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
15
10
5
20
15
10
5
10V
VDS=5V
4.5V
2.5V
125°C
25°C
VGS=2.0V
0
0
0
1
2
3
4
0
1
2
3
4
5
VGS(Volts)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
100
80
1.8
VGS=4.5V
ID=3A
1.6
1.4
1.2
1
VGS=2.5V
VGS=4.5V
VGS=10V
VGS=10V
ID=4A
60
VGS=2.5V
ID=2A
40
0.8
20
0
25
50
75
100
125
150
175
0
2
4
6
8
10
ID (A)
Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
120
100
80
1.0E+02
1.0E+01
ID=4A
1.0E+00
125°C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
60
25°C
40
25°C
20
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
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AO3434A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
350
300
250
200
150
100
50
VDS=15V
ID=4A
8
Ciss
6
4
Coss
2
Crss
0
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
10000
1000
100
10
100.0
10.0
1.0
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
10ms
TJ(Max)=150°C
TA=25°C
0.1
10s
DC
1
0.0
1E-05
0.001
0.1
10
1000
0.01
0.1
1
10
100
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
0.01
PD
Single Pulse
0.001
Ton
T
0.001
1E-05
0.0001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
4 / 5
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AO3434A
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
-
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
VDC
Rg
-
Vgs
Vgs
td(on)
t
r
td(off)
t
f
ton
toff
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
trr
Vds -
L
Isd
I F
Isd
Vgs
dI/dt
I RM
+
Vdd
VDC
Vdd
-
Vds
Ig
5 / 5
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