FMS2303 [FORMOSA]
30V P-Channel Enhancement Mode MOSFET; 30V P沟道增强型MOSFET
| 型号： | FMS2303 |
| 厂家： | 
FORMOSA MS |
| 描述： | 30V P-Channel Enhancement Mode MOSFET |
| 文件： | 总8页 (文件大小：1231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD MOSFET
Formosa MS
FMS2303
List
1
List.................................................................................................
Package outline...............................................................................
Features..........................................................................................
Mechanical data...............................................................................
Maximum ratings .............................................................................
Rating and characteristic curves........................................................
Pinning information...........................................................................
Marking...........................................................................................
Suggested solder pad layout.............................................................
Packing information..........................................................................
Reel packing....................................................................................
Suggested thermal profiles for soldering processes.............................
2
2
2
2~ 3
4~ 5
6
6
6
7
8
8
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231135
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
8
Page 1
SMD MOSFET
Formosa MS
FMS2303
30V P-Channel Enhancement
Mode MOSFET
Package outline
SOT-23
Features
• RDS(ON) ≦75mΩ@VGS=-10V
• RDS(ON) ≦100mΩ@VGS=-4.5V
• Super high density cell design for extremely low RDS(ON)
• In compliance with EU RoHS 2002/95/EC directives.
• Suffix "-H" indicates Halogen-free part, ex.FMS2303-H.
(B)
(A)
(C)
0.063 (1.60)
0.047 (1.20)
0.027 (0.67)
0.013 (0.32)
0.108 (2.75)
0.083 (2.10)
Mechanical data
0.051 (1.30)
0.035 (0.89)
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-23
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
Dimensions in inches and (millimeters)
• Mounting Position : Any
• Weight : Approximated 0.008 gram
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
VDSS
Limit
-30
UNIT
V
Drain-source voltage
Drain current-continue
TA = 25OC
TA = 70OC
-3.2
-2.6
ID
A
-pulsed
IDM
-13
20
Gate- source voltage-continue
Maximum power dissipation
VGS
V
TA = 25OC
TA = 70OC
1.3
0.8
PD
W
Thermal resistance-junction to ambient*
Operation junction temperature
Storage temperature
RθJA
TJ
100
oC/W
oC
-55 to +150
-65 to +150
oC
TSTG
* The device mounted on 1in2 FR4 board with 2 oz copper
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231135
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
8
Page 2
SMD MOSFET
Formosa MS
FMS2303
Electrical characteristics (At TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
-30
TYP.
MAX.
UNIT
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
VGS = 0V, ID= -250uA
BVDSS
IDSS
V
VDS = -30V, VGS = 0V, TJ = 25OC
VGS = 20V, VDS=0
μA
nA
-1.0
100
Gate-body leakage current-forward
Gate-body leakage current-reverse
Gate threshold voltage
IGSSF
IGSSR
V
GS = -20V, VDS=0
nA
V
-100
-3.0
V
GS(th)
VDS = VGS, ID = -250uA
-1.0
Static drain-source on-resistancea
Diode Forward Voltage
60
75
VGS = -10V, ID = -1.7A
VGS = -4.5V, ID= -1.3A
75
RDS(ON)
mΩ
V
100
VGS =0V, IS = -1.25A, TJ =25OC
VSD
-0.7
-1.4
DYNAMIC
Intput capacitance
464
72
Ciss
Coss
Crss
Qg
VDS = -15V, VGS = 0V,
f=1.0MHz
Output capacitance
Reverse transfer capacitance
Total gate charge
pF
nC
23
14.4
2.7
3.6
32
Gate-source charge
Gate-drain charge
VDS = -15V, ID = -1.7A
VGS=-10.0V
Qgs
Qgd
Td(on)
Tr
Turn-On Delay Time
17
VDS = -15V,RL=15Ω, RGEN=6Ω
VGS=-10V
ns
40
Td(off)
Tf
Turn-Off Delay Time
5
Notes: a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2%
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231135
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
8
Page 3
Rating and characteristic curves (FMS2303)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231135
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
8
Page 4
Rating and characteristic curves (FMS2303)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231135
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
8
Page 5
SMD MOSFET
Formosa MS
FMS2303
Pinning information
Pin
Simplified outline
Symbol
D
Drain
PinD Drain
PinG Gate
PinS Source
Gate
Source
G
S
Marking
Type number
FMS2303
Marking code
WCG0A
(Note 1)
Note: 1.
P/N：
“WCG” is FMS2303-H
“WC” shown on the 1st~2rd position on --- FMS2303
“G” shown on the 3th position on --- Green product-Halogen free
D/C：
0A is the sequence of “0-9” & “A~Z”
0~9 shown on the 4th position on ---2010~2019
A~Z shown on the5th position on ---1week~26week
A~Z shown on the 5th position on ---27week~52week
Suggested solder pad layout
SOT-23
0.037(0.95)
0.037(0.95)
0.079(2.0)
0.035(0.90)
0.031(0.80)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231135
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
8
Page 6
SMD MOSFET
Formosa MS
FMS2303
Packing information
P0
P1
d
E
F
W
B
A
P
D2
D1
T
C
W1
D
unit:mm
Symbol
SOT-23
Item
Tolerance
Carrier width
Carrier length
Carrier depth
Sprocket hole
A
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
3.15
2.77
1.22
1.50
-
B
C
d
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
D
D1
D
-
178.00
55.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
12.0
D1
D2
E
F
P
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
P0
P1
T
W
W1
Reel width
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231135
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
8
Page 7
SMD MOSFET
Formosa MS
FMS2303
Reel packing
INNER
BOX
REEL
DIA,
CARTON
SIZE
COMPONENT
SPACING
APPROX.
GROSS WEIGHT
BOX
(pcs)
PACKAGE
SOT-23
REEL SIZE
7"
REEL
(pcs)
CARTON
(pcs)
(m/m)
(m/m)
(m/m)
(kg)
(m/m)
3000
4.0
30,000
178
383*262*387
240,000
11.6
183*183*123
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5oC~40oC Humidity=55% 25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t25oC to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(TL to TP)
<3oC/sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(ts)
150oC
200oC
60~120sec
Tsmax to TL
-Ramp-upRate
<3oC/sec
Time maintained above:
-Temperature(TL)
-Time(tL)
217oC
60~260sec
Peak Temperature(TP)
255oC-0/+5oC
Time within 5oC of actual Peak
Temperature(tP)
10~30sec
Ramp-down Rate
<6oC/sec
Time 25oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
DS-231135
Issued Date
2011/03/10
Revised Date
2011/07/21
Revision
B
Page.
8
Page 8
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