FMS3 [TYSEMI]
High breakdown voltage, Power dissipation: PC=300mW; 高击穿电压，功耗： PC = 300mW的
| 型号： | FMS3 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | High breakdown voltage, Power dissipation: PC=300mW |
| 文件： | 总1页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Product specification
FMS3
■Features
Unit: mm
● High breakdown voltage
● Power dissipation: PC=300mW
● Collector Curren: IC=-50mA
5
4
1
2
3
FMS3
■Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-120
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-120
V
-5.0
V
Collector Current -Continuous
Collector Power Dissipation(TOTAL)
Junction Temperature
-50
mA
mW
℃
PC
300
Tj
150
Storage Temperature
Tstg
-55 to 150
℃
■Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
-120
-120
-5.0
Typ Max
Unit
V
Ic= -50μA, IE=0
V(BR)CBO
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
V(BR)CEO Ic= -1 mA， IB=0
V(BR)EBO IE= -50 μA， IC=0
V
V
IcBO
IEBO
hFE
VCB= -100 V , IE=0
VCE= -4.0V , IC=0
-0.5
-0.5
μA
μA
Collector cutoff current
DC current gain
VCE= -60V, IC= -2.0mA
180
820
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC=-10 mA, IB= -1.0mA
fT VCE= -12V, IC= -2mA,f=100MHz
-0.5
V
140
MHz
■ Marking
Marking
S3
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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