FMS3 [ROHM]
General purpose (dual transistors); 通用（双晶体管）
| 型号： | FMS3 |
| 厂家： | 
ROHM |
| 描述： | General purpose (dual transistors) |
| 文件： | 总1页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMS3 / FMS4 / IMT4
Transistors
General purpose (dual transistors)
FMS3 / FMS4 / IMT4
!Features
!External dimensions (Units : mm)
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
FMS3
1.6
2.8
!Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
−120
−120
−5
−50
300 (TOTAL)
150
0.3to0.6
V
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
V
I
C
mA
mW
˚C
˚C
Power dissipation
Pc
Tj
∗
Junction temperature
Storage temperature
Tstg
−55∼+150
FMS4
200mW per element must not be exceeded.
∗
1.6
2.8
!Package, marking, and Packaging specifications
Part No.
Package
Marking
FMS3
SMT5
S3
FMS4
SMT5
S4
IMT4
SMT6
T4
0.3to0.6
Each lead has same dimensions
ROHM : SMT5
EIAJ : SC-74A
T148
3000
T148
3000
T108
3000
Code
Basic ordering unit (pieces)
IMT4
!Circuit diagram
FMS3
1.6
2.8
FMS4
IMT4
0.3to0.6
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
−120
−120
−5
−
−
180
−
−
−
−
−
−
−
140
−
−
−
−
−0.5
−0.5
820
−
V
V
I
I
I
C
=
=
−50µA
−1mA
C
V
E
=
−50µA
−100V
−4V
−6V, I
−12V, I
−10mA/−1mA
I
CBO
EBO
FE
µA
µA
−
MHz
V
V
V
V
V
CB
=
Emitter cutoff current
I
EB
=
DC current transfer ratio
h
CE
=
=
C
−2mA
Transition frequency
f
T
CE
E
=
2mA, f
=
100MHz
∗
Collector-emitter saturation voltage
V
CE(sat)
−
−0.5
IC/IB=
∗Transition frequency of the device.
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