FMS2031-001-EB [FILTRONIC]
10 Watt GaAs Wide Band SPDT Switch; 10瓦的GaAs宽带SPDT开关
| 型号： | FMS2031-001-EB |
| 厂家： | 
FILTRONIC COMPOUND SEMICONDUCTORS |
| 描述： | 10 Watt GaAs Wide Band SPDT Switch |
| 文件： | 总7页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Production 3.0
FMS2031-001
10 Watt GaAs Wide Band SPDT Switch
Features:
ANT
♦
3x3x0.9mm Packaged pHEMT Switch
♦
Ideal for WiMax, L, S, and C-band
digital cellular, and WLAN applications
High isolation, 36dB typ at 3.5GHz
Low insertion loss, 0.5dB typ at 2.5GHz
Low insertion loss, 0.96dB typ at 6GHz
P1dB 42dBm at 5GHz
Operates from a single positive voltage
Less than 10µA control current at
35dBm input power
V1
V2
♦
♦
♦
♦
♦
♦
RF1
RF2
Functional Schematic
♦
RoHS compliant
Description and Applications:
The FMS2031-001 is a 10 Watt, low loss, and single pole dual throw Gallium Arsenide antenna switch. The
die is fabricated using the Filtronic FL05 0.5µm switch process technology, which offers leading edge
performance optimised for switch applications. The FMS2031-001 is designed for use in WiMax, L, S, and C
band wireless applications and WLAN access points where high linearity switching is required.
Absolute Maximum Ratings:
Parameter
Symbol
Absolute Maximum
Max Input Power
Control Voltage
Pin
+42dBm
+6V
V ctrl
T oper
T stor
Operating Temperature
Storage Temperature
-40°C to +100°C
-55°C to +150°C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
Truth Table:
Switch
State
VC1
VC2
ANT– RF1
ANT– RF2
(A)
(B)
HIGH
LOW
LOW
Insertion Loss
Isolation
Isolation
HIGH
Insertion Loss
General Test Conditions:
Note: External DC blocking capacitors are required on all RF ports (typ: 9pF)
All unused ports terminated in 50Ω.
High +2.7V to +6V
Low +0V to +0.2V
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Production 3.0
FMS2031-001
Electrical Specifications: (TAMBIENT = 25°C, Vctrl = 0V/2.7V, ZIN = ZOUT = 50Ω)
Parameter
Test Conditions
Min
Typ
Max
Units
2.3 – 2.7 GHz
3.3 – 3.8 GHz
4.9 –5.9 GHz
0.5
0.55
0.9
0.6
0.7
Insertion Loss
dB
2.3 – 2.7 GHz
3.3 – 3.8 GHz
4.9 –5.9 GHz
27.5
21.5
>tba
dB
dB
Return Loss
Isolation
2.3 – 2.7 GHz
3.3 – 3.8 GHz
4.9 –5.9 GHz
30
30
32.5
35
23
2.3 – 2.7 GHz
3.3 – 3.8 GHz
4.9 –5.9 GHz
39.5
38.5
38
dBm
dBm
Input power at 0.1dB compression point
Input power at 0.5dB compression point
2.3 – 2.7 GHz
3.3 – 3.8 GHz
4.9 –5.9 GHz
41
41
41
EVM (Contribution due to Switch)
IP3
35dBm at 5.9GHz (OFDM WLAN 54)
∆ 0.5
%
+15dBm 1980MHz
+15dBm 1940MHz
65
dB
Switching speed : T rise, T fall
T on, T off
10% to 90% RF and 90% to 10% RF
<300
<800
ns
ns
50% control to 90% RF and 50% control to 10% RF
Control Current
+35dBm RF input @0.96GHz
<5
10
µA
2
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
Production 3.0
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions VCTRL = 2.7V (high) & 0V (low), TAMBIENT = 25°C unless otherwise stated)
Insertion Loss vs Frequency
Isolation vs Frequency
0.0
-0.5
-1.0
-1.5
-2.0
-20
-25
-30
-35
-40
2.0
2.5
3.0
3.5
4.0
2.0
2.5
3.0
3.5
4.0
(GHz)
(GHz)
Return Loss vs Frequency
3rd Harmonic Level (0.9 GHz) vs Control Voltage
0
-10
-20
-30
-40
-50
-50
-55
-60
-65
-70
-75
Variable
DB(|S(1,1)|)
DB(|S(2,2)|)
2.0
2.5
3.0
3.5
4.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
(GHz)
(V)
Power Loss* vs Input Power
2.0
1.5
1.0
0.5
0.0
25.0
27.5
30.0
32.5
(dBm)
35.0
37.5
40.0
Power Loss*=(Large Signal Loss - Small Signal Loss)
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
3
Production 3.0
Pad Layout:
V1
ANT V2
Pin Number
Description
1
N/C
N/C
2
9
8
7
3
N/C
10
6
4
RF2
N/C
5
PADDLE
11
12
5
4
6
N/C
7
V2
RF2
8
ANT RF
V1
RF1
1
2
3
9
10
Pin 1
N/C
11
N/C
12
RF1
GND
PADDLE
*View from the top of the package
QFN 12 Lead 3x3 Package Outline:
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
4
Production 3.0
Evaluation Board:
BOM
Component
Label
C7
C3,C4
C1,C2,C7
C5,C6
Capacitor, 470pF, 0603
Capacitor, 9pF, 0402
Capacitor, 47pF, 0402
C6
C2
C5
C1
C3
C4
Preferred evaluation board material is 0.25 mm thick
ROGERS RT4350. All RF tracks should be 50 ohm
characteristic impedance.
BOARD
Evaluation Board De-Embedding Data (Measured):
Insertion Loss vs Frequency
Return Loss vs Frequency
0
-10
-20
-30
-40
-50
0.0
-0.5
-1.0
-1.5
-2.0
Variable
DB(|S(1,1)|) : CALBOARD_9PF
DB(|S(2,2)|) : CALBOARD_9PF
2.0
2.5
3.0
(GHz)
3.5
4.0
2.0
2.5
3.0
(GHz)
3.5
4.0
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
5
Production 3.0
Tape & Reel Specification:
Tape Dimensions
Description
Symbol
Size (mm)
Perforation
Diameter
Pitch
D0
P0
E1
A0
B0
K
1.5 ±0.1
4.0 ±0.1
1.75 ±0.1
3.3 ±0.1
3.3 ±0.1
1.1 ±0.1
Position
Length
Width
Cavity
Depth
Distance between centre lines
Cavity to Perforation
(length direction)
P2
2.0 ±0.1
Cavity to Perforation
(width direction)
F
5.5 ±0.1
12 ±0.3
Carrier tape
Width
W
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
6
Production 3.0
Preferred Assembly Instructions:
Available on request.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (250-500 V) as defined in JEDEC Standard No.
22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-
HDBK-263.
Application Notes & Design Data:
Application Notes and design data, including S-parameters, are available on request.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
Ordering Information:
Part Number
Description
Packaged Die
FMS2031-001-TR
Tape & Reel (minimum quantity: 1k pcs)
FMS2031-001-TB
FMS2031-001-EB
Packaged Die supplied in a Tube
Packaged Die mounted on Evaluation Board
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
7
相关型号：
FMS2AT148
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SC-74A, 5 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明