FDD3N40TF [FAIRCHILD]
400V N-Channel MOSFET; 400V N沟道MOSFET
| 型号： | FDD3N40TF |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 400V N-Channel MOSFET |
| 文件： | 总9页 (文件大小：727K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2007
TM
UniFET
FDD3N40 / FDU3N40
400V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
2A, 400V, RDS(on) = 3.4Ω @VGS = 10 V
Low gate charge ( typical 4.5 nC)
Low Crss ( typical 3.7 pF)
Fast switching
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
100% avalanche tested
Improved dv/dt capability
D
D
G
I-PAK
FDU Series
D-PAK
FDD Series
G
S
G
D
S
S
Absolute Maximum Ratings
Symbol
Parameter
FDD3N40 / FDU3N40
Unit
VDSS
Drain-Source Voltage
Drain Current
400
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
A
A
2.0
1.25
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
8.0
±30
46
2
A
V
VGSS
EAS
IAR
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
3
mJ
V/ns
4.5
Power Dissipation
(TC = 25°C)
30
W
- Derate above 25°C
0.24
W/°C
T
J, TSTG
Operating and Storage Temperature Range
-55 to +150
300
°C
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Typ
--
Max
4.2
Unit
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
--
110
©2007 Fairchild Semiconductor Corporation
FDD3N40 / FDU3N40 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FDD3N40
Device
Package
D-PAK
Reel Size
380mm
380mm
-
Tape Width
Quantity
2500
FDD3N40TM
FDD3N40TF
FDU3N40TU
16mm
16mm
-
FDD3N40
D-PAK
2000
FDU3N40
I-PAK
70
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
D = 250µA, Referenced to 25°C
400
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
Coefficient
I
0.4
V/°C
/
∆TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 400V, VGS = 0V
DS = 320V, TC = 125°C
--
--
--
--
1
10
µA
µA
V
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250µA
3.0
--
--
2.8
2
5.0
3.4
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 1A
(Note 4)
gFS
Forward Transconductance
VDS = 40V, ID = 1A
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
173
30
225
40
6
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
3.7
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 200V, ID = 3A
--
--
--
--
--
--
--
10
30
10
25
4.5
1.2
2
30
70
30
60
6
ns
ns
RG = 25Ω
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
VDS = 320V, ID = 3A
GS = 10V
nC
nC
nC
V
Qgs
Qgd
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
2
8
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 2A
--
1.4
--
V
VGS = 0V, IS = 3A
210
0.75
ns
µC
dIF/dt =100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 20mH, I = 2A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 2A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
www.fairchildsemi.com
FDD3N40 / FDU3N40 Rev. A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
101
101
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
10-1
10-2
Bottom : 5.5 V
150oC
25oC
-55oC
* Notes :
1. 250µs Pulse Test
* Notes :
1. VDS = 40V
2. 250µs Pulse Test
o
2. TC = 25 C
100
10-1
100
101
4
5
6
7
8
9
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
15
14
13
12
11
10
9
101
100
10-1
8
VGS = 10V
7
6
5
150oC
VGS = 20V
4
25oC
3
* Notes :
1. VGS = 0V
2. 250µs Pulse Test
2
o
* Note : TJ = 25 C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1
2
3
4
5
6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
350
12
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
300
250
200
150
100
50
VDS = 80V
10
8
Coss
VDS = 200V
VDS = 320V
C
iss
6
4
* Note :
1. VGS = 0 V
2. f = 1 MHz
C
rss
2
* Note : ID = 3A
0
0
10-1
100
101
0
1
2
3
4
5
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3
www.fairchildsemi.com
FDD3N40 / FDU3N40 Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
* Notes :
1. VGS = 10 V
2. ID = 250µA
0.5
2. ID = 1 A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2.5
101
10 µs
2.0
1.5
1.0
0.5
0.0
100 µs
1 ms
100
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
DC
-1
10
* Notes :
1. TC = 25 o
2. TJ = 150 o
C
C
3. Single Pulse
-2
10
100
101
102
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
D = 0.5
1 0 0
0.2
PDM
0.1
t1
t2
0 .05
0.02
0.01
*
N o te s
1 . Z θ JC (t)
2 . D u ty F a cto r, D = t1/t2
3 . T JM T C P D M Z θ JC (t)
:
o
=
4 .2 C /W M a x.
1 0 -1
-
=
*
single p ulse
1 0 -3
1 0 -5
1 0 -4
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a ve P u lse D u ra tio n [se c]
4
www.fairchildsemi.com
FDD3N40 / FDU3N40 Rev. A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
www.fairchildsemi.com
FDD3N40 / FDU3N40 Rev. A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
www.fairchildsemi.com
FDD3N40 / FDU3N40 Rev. A
Mechanical Dimensions
D-PAK
7
www.fairchildsemi.com
FDD3N40 / FDU3N40 Rev. A
Mechanical Dimensions
I-PAK
8
www.fairchildsemi.com
FDD3N40 / FDU3N40 Rev. A
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
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Rev. I23
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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