ZXMC3AM832(1) [ETC]
;
ETC 
ZXMC3AM832
MPPS™ Miniature Package Power Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A
P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
3mm x 2mm Dual Die MLP
FEATURES
•
•
•
•
•
Low On - Resistance
Fast switching speed
Low threshold
Low gate drive
3mm x 2mm MLP
APPLICATIONS
•
MOSFET Gate Drive
PINOUT
•
•
LCD Backlight Inverters
Motor Control
5
6
3
7
2
8
1
ORDERING INFORMATION
DEVICE
REEL
TAPE
QUANTITY
PER REEL
WIDTH
ZXMC3AM832TA
ZXMC3AM832TC
7’‘
8mm
8mm
3000 units
4
13’‘
10000 units
3 x 2 Dual MLP
underside view
DEVICE MARKING
C01
PROVISIONAL ISSUE D - JULY 2002
1
ZXMC3AM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL N-Channel P-Channel
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
30
-30
V
V
DSS
GS
Ϯ20
Ϯ20
Continuous Drain Current@V =10V; T =25ЊC (b)(f)
GS
I
3.7
3.0
2.9
-2.7
-2.2
-2.1
A
A
A
D
@V =10V; T =25ЊC(b)(f)
GS
A
@V =10V; T =25ЊC (a)(f)
GS
A
Pulsed Drain Current
I
I
I
12.4
2.4
-9.2
-2.8
-9.2
A
A
A
DM
S
Continuous Source Current (Body Diode)(b)(f)
Pulsed Source Current (Body Diode)
12.4
SM
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
P
P
P
P
1.5
12
W
D
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
1.13
8
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
1.7
13.6
W
mW/°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83.3
51
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
R
R
R
R
R
R
θJA
θJA
θJA
θJA
θJA
θJA
125
111
73.5
41.7
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
PROVISIONAL ISSUE D - JULY 2002
2
ZXMC3AM832
TYPICAL CHARACTERISTICS
RDS(ON)
Limited
RDS(ON)
Limited
10
10
1
1
DC
DC
1s
1s
100ms
100ms
100m
10m
100m
10ms
10ms
1ms
1ms
Note (a)(f)
Note (a)(f)
100us
10
100us
10
Single Pulse, Tamb=25°C
1
10m Single Pulse, Tamb=25°C
1
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Note (a)(f)
D=0.5
80
60
40
20
0
2oz Cu
Note (e)(g)
2oz Cu
Note (a)(f)
1oz Cu
Note (d)(g)
Single Pulse
D=0.2
D=0.05
D=0.1
1oz Cu
Note (d)(f)
100µ 1m 10m 100m
1
10 100 1k
0
25
50
75
100 125 150
Pulse Width (s)
Temperature (°C)
Derating Curve
Transient Thermal Impedance
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
225
200
175
150
125
100
75
2oz copper
Note (g)
Tamb=25°C
jmax=150°C
Continuous
1oz copper
Note (f)
T
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (f)
1oz copper
Note (g)
50
1oz copper
Note (f)
2oz copper
Note (g)
25
0
0.1
1
10
100
0.1
1
10
100
BoardCuArea(sqcm)
BoardCuArea(sqcm)
Thermal Resistance v Board Area
Power Dissipation v Board Area
PROVISIONAL ISSUE D - JULY 2002
3
ZXMC3AM832
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
30
V
µA
nA
V
I
=250µA, V =0V
(BR)DSS
D
GS
I
0.5
V
=30V, V =0V
DSS
DS
GS
I
100
V
=±20V, V =0V
GSS
GS
DS
Gate-Source Threshold Voltage
V
1
I
=250µA, V = V
GS(th)
DS
GS
D
Static Drain-Source On-State Resistance
(1)
R
0.106
3.5
0.12
0.18
V
V
=10V, I =2.5A
Ω
Ω
DS(on)
GS
GS
D
=4.5V, I =2.0A
D
Forward Transconductance (1)(3)
DYNAMIC (3)
g
S
V
=4.5V,I =2.5A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
190
38
pF
pF
pF
iss
V
=25 V, V =0V,
GS
DS
oss
rss
f=1MHz
20
t
t
t
t
1.7
2.3
6.6
2.9
2.3
ns
ns
ns
ns
nC
d(on)
r
V
R
=15V, I =2.5A
D
=6.0Ω, V =10V
GS
DD
G
Turn-Off Delay Time
Fall Time
d(off)
f
Gate Charge
Q
V
=15V,V =5V,
GS
g
DS
ID=2.5A
Total Gate Charge
Q
Q
Q
3.9
0.6
0.9
nC
nC
nC
g
V
=15V,V =10V,
GS
DS
ID=2.5A
Gate-Source Charge
Gate-Drain Charge
gs
gd
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
0.85
0.95
V
T =25°C, I =1.7A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
t
17.7
13.0
ns
T =25°C, I =2.5A,
J F
di/dt= 100A/µs
rr
Q
nC
rr
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE D - JULY 2002
4
ZXMC3AM832
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
-30
V
A
nA
V
I
=-250µA, V =0V
GS
(BR)DSS
D
I
I
1
V
=-30V, V =0V
DS GS
DSS
GSS
100
V
=Ϯ20V, V =0V
DS
GS
Gate-Source Threshold Voltage
V
R
-0.8
I
=-250A, V = V
DS
GS(th)
DS(on)
GS
D
Static Drain-Source On-State Resistance
(1)
0.210
0.330
V
V
=-10V, I =-1.4A
D
=-4.5V, I =-1.1A
D
Ω
Ω
GS
GS
Forward Transconductance (1)(3)
DYNAMIC (3)
g
2.48
S
V
=-15V,I =-1.4A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
204
39.8
25.8
pF
pF
pF
iss
V
=-15 V, V =0V,
GS
DS
oss
rss
f=1MHz
t
t
t
t
1.15
2.29
12.1
7.48
2.58
ns
ns
ns
ns
nC
d(on)
V
R
=-15V, I =-1A
D
=6.0Ω, V =-10V
GS
r
DD
G
Turn-Off Delay Time
Fall Time
d(off)
f
Gate Charge
Q
V
=-15V,V =-5V,
GS
=-1.4A
g
DS
I
D
Total Gate Charge
Q
Q
Q
5.15
0.65
0.92
nC
nC
nC
g
V
D
=-15V,V =-10V,
GS
DS
=-1.4A
Gate-Source Charge
Gate-Drain Charge
gs
gd
I
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
-0.85
-0.95
V
T =25°C, I =-1.1A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
t
18.6
14.8
ns
T =25°C, I =-0.95A,
J F
di/dt= 100A/µs
rr
Q
nC
rr
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE D - JULY 2002
5
ZXMC3AM832
N-CHANNEL TYPICAL CHARACTERISTICS
T = 150°C
10V 7V
10V
5V
7V
5V
T = 25°C
10
1
10
1
4.5V
4V
4.5V
4V
3.5V
3.5V
3V
3V
2.5V
2V
VGS
VGS
0.1
0.1
2.5V
0.1
1
0.1
V
1
VDS Drain-Source Voltage1(0V)
Drain-Source Voltage1(0V)
Output Characteristics
DSOutput Characteristics
10
1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10V
VDS = 10V
IDG=S 2.5A
RDS(on)
T = 150°C
VGS(th)
T=25°C
3.0
V
=VDS
IDG=S 250uA
0.1
2.0
2.5
3.5
4.0
5.0
-50
0
50
100
150
VGS Gate-Source Voltage (4V.5)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
3.5V
4V
VGS
3V
2.5V
10
1
T = 150°C
1
4.5V
5V
7V
10V
10
T = 25°C
0.1
0.1
T=25°C
0.1
0.4
0.6
0.8
1.0
1.2
1
ID Drain Current (A)
V
Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
PROVISIONAL ISSUE D - JULY 2002
6
ZXMC3AM832
N-CHANNEL TYPICAL CHARACTERISTICS
300
250
200
150
100
50
10
VGS =0V
f =1MHz
ID =2.5A
8
6
4
2
0
C
ISS
COSS
VDS = 15V
C
RSS
0
0
1
2
3
4
0.1
1
10
VDS - Drain- SourceVoltage(V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE D - JULY 2002
7
ZXMC3AM832
P-CHANNEL TYPICAL CHARACTERISTICS
10V
T = 150°C
T=25°C
10
10V
5V
10
1
5V
4V
4V
3.5V
3V
3.5V
3V
2.5V
1
0.1
2.5V
-VGS
2V
2V
0.1
0.01
-VGS
1.5V
0.01
0.1
1
10
0.1
1
10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
V
=-10V
IDG=S -1.4A
RDS(on)
T = 150°C
1
T=25°C
VGS(th)
V
=VDS
IDG=S -250uA
0.1
-VDS =10V
1
2
3
4
5
-50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
2V
10
T=25°C
100
10
1
-VGS
2.5V
T = 150°C
1
0.1
3V
3.5V
4V
T=25°C
1.0
5V
10V
0.01
0.1
0.2
0.4
0.6
0.8
1.4
-V Source-Drain Voltage1(.V2 )
0.1
1
10
-I Drain Current (A)
SD
On-ResDistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE D - JULY 2002
8
ZXMC3AM832
P-CHANNEL TYPICAL CHARACTERISTICS
300
250
200
150
100
50
10
VGS =0V
f =1MHz
ID = -1.4A
8
6
4
2
0
C
ISS
COSS
C
RSS
VDS = -15V
0
0.1
10
0
2
4
6
-VDS - Drain1- SourceVoltage(V)
Q- Charge(nC)
Capacitance v Drain-Source Voltage
Gate-SourceVoltagevGateCharge
PROVISIONAL ISSUE D - JULY 2002
9
ZXMC3AM832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
MIN. MAX.
0.65 REF
2.00 BSC
INCHES
MIN. MAX.
DIM
DIM
MIN.
0.80
0.00
0.65
0.15
0.24
0.17
MAX.
1.00
0.05
0.75
0.25
0.34
0.30
MIN.
MAX.
0.039
A
A1
A2
A3
b
0.031
0.00
e
E
0.0256 BSC
0.0787 BSC
0.002
0.0255
0.006
0.009
0.0066
0.0295
0.0098
0.013
E2
E4
L
0.43
0.63
0.36
0.017
0.0249
0.014
0.16
0.20
0.006
0.0078
0.00
0.45
0.0157
0.005
b1
D
0.0118
L2
r
0.125
3.00 BSC
0.118 BSC
0.075 BSC
0.0029 BSC
D2
0.82
1.02
0.032
0.040
⍜
0Њ
12Њ
0Њ
12Њ
© Zetex plc 2002
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For the latest product information, log on to www.zetex.com
PROVISIONAL ISSUE D - JULY 2002
10
相关型号：
ZXMC3AM832TA
MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZETEX
ZXMC3AM832TC
MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZETEX
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